TRANSISTOR 6J U Search Results

sot89 land pattern

Contextual Info: Recommended land patterns Recommended transistor package land patterns for high density mounting. Provide large pad for collector fin of power transistors of MPT, CPTF5 and PSD for effective heat dissipation. •M in i mold type Unit: mm Body dimensions

Transistor Array differential amplifier

Abstract: transistor array high speed G141C UPA102G
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

motorola transistor cross reference

Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
Contextual Info: MOTOROLA SC XSTRS/R F 4fe,E D WM b 3 b ? 2 S 4 00=13843 =1 • M O T b RF Power Bipolar Transistors — UHF Transistors (continued) T -3 3 ^ 7 5 0 0 -1 0 0 0 MHz BAND Capable of operation in either class AB or C, the following devices are designed for operation to 1 GHz. Gold metallized die, diffused

transistor 6J U

Contextual Info: / r r S CS-THOMSON ^7# iSHeœilLieTHiBJMiE BUH615D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE . U.L, RECOGNISED ISOWATT218 PACKAGE U.L. FILE #E81734 (N

tp 312 transistor

Abstract: Motorola transistors 2N5192 2N5190 MOTOROLA 2N5190
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N 5192* Silicon NPN Power TVansistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194,2N5195. •MAXIMUM RATINGS Rating Collector-Emitter Voltage

transistor over current detection

Abstract: d2718 100 volt to 24 volt regulator circuit diagram RC4193 texas instruments circuit diagram RM4193 5 volt ic voltage regulator circuit diagram voltage regulator 6 volt
Contextual Info: T EXAS INSTR Ö961724 -CLIN/INTFO TEXAS SS DË] 0^1724 DG3MSbt IN STRCLÌN /ÌN TFcf 5 |~ 55C 34 56Ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 H igh Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G

Avantek amplifier UTC

Abstract: AVANTEK utc AVANTEK utc 543 Avantek* UTC utc215 AVANTEK uto AVANTEK transistor avantek Low Noise Amplifier
Contextual Info: T hat HEWLETT mLUM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 543 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 543 Series is a thin-film RF bipolar amplifier using lossless

transistor 6J U

Contextual Info: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G

LDTA143EWT1G

Abstract: transistor 6j PNP marking 6J
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143EWT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

ECG1351

Abstract: philips capacitor 35v
Contextual Info: * PHILIPS E C G INC 17E bbSBTSû 000522 4 =] ECG1351 Sem iconductors 25 W Dual A F PO T-74-05-01 Features • D e signed for hl-fl stereo am plifiers • Less than 0 .2 % harm onic distortion at full pow er level The ECG1351 is a self-contained high power

RF power amplifier MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak

35 W 960 MHz RF POWER TRANSISTOR NPN

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Long Pulse Pow er Transistor Designed for 960-1215 MHz long or short pulse common base amplifier applications such as JTIDS and M ode-S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

ECG1351

Abstract: G00522H ECG5013 ECG5013A
Contextual Info: 17E PHILIPS E C G INC ECG Se m ico n d u cto rs bbSBTEö G00522H =] ECG1351 25 W D u a l A F PO T -74 -0 5 -0 1 Features • Designed for hi-fi stereo amplifiers * Less than 0.2% harmonic distortion at full power level The ECG1351 is a self-contained high power

BUH3150

Abstract: BUH315D TRANSISTOR L 287 A
Contextual Info: S C S -T H O M S O N RitlQOlOilLiOfiOiQOi BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE #E81734 (N . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.

transistor 2n5194

Abstract: Motorola transistors 2N5192
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 5194 2N 5 1 95 * Silicon PNP Power Transistors ‘Motorola Prtftrrtd Devio* . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN4989FE

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

ca3083

Abstract: an5296 3083F
Contextual Info: ÎSÏ HARRIS U U C 'A Q fiß Q S E M I C O N D U C T O R General Purpose High Current NPN Transistor Array September 1996 Features Description • H ig h lc. 100mA Max The CA3083 is a versatile array of five high current (to