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    TRANSISTOR 6R099 Search Results

    TRANSISTOR 6R099 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6R099 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6R099C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 PDF

    6R099C6

    Abstract: CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPP60R099C6 IPW60R099C6 6R099* TO220
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPW60R099C6 6R099* TO220 PDF

    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 PDF

    6R099C6

    Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE PDF

    IPW60R099CP 6R099

    Abstract: 6R099 6r099 mosfet IPW60R099CP mosfet 6r099 IPW60R099CP+6R099
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 600 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 PG-TO247-3-1 SP000067147 6R099 IPW60R099CP 6R099 6R099 6r099 mosfet IPW60R099CP mosfet 6r099 IPW60R099CP+6R099 PDF

    6R099

    Abstract: IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10gerous 6R099 IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099 PDF

    6R099

    Abstract: IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10erous 6R099 IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22 PDF

    6R099

    Abstract: IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet marking code D18
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10erous 6R099 IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet marking code D18 PDF

    6r099

    Abstract: IPW60R099CP 6R099
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 6r099 IPW60R099CP 6R099 PDF

    6R099

    Abstract: IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25
    Contextual Info: IPW60R099CS CoolMOS TM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 600 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CS PG-TO247-3 Q67045A5060 6R099 6R099 IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25 PDF

    6R099

    Abstract: 6R099 TO 247 IPW60R099CP 6R099 SP000067147 IPW60R099CP JESD22
    Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 009-134-A O-247 6R099 6R099 TO 247 IPW60R099CP 6R099 SP000067147 IPW60R099CP JESD22 PDF

    6r099a

    Abstract: 6R099 IPI60R099CPA
    Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPI60R099CPA IPI60R099CPA PG-TO262-3-1 6R099A PG-TO262-3-1 6R099 PDF

    ipb60r099cpa

    Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
    Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPI60R099CPA PG-TO262-3-1 6R099A PG-TO220-3-1 PG-TO247-3-41 ipb60r099cpa IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1 PDF

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Contextual Info: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V PDF

    6R099

    Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
    Contextual Info: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA IPB60R099CPA PG-TO263-3-2 6R099A PG-TO263-3-2 6R099 IPB60R099 PDF

    6r099 mosfet

    Abstract: 6R099 c25 diode to220 Transistor 6r099
    Contextual Info: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6r099 mosfet 6R099 c25 diode to220 Transistor 6r099 PDF

    6R099

    Abstract: 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor
    Contextual Info: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263-3-2 SP000088490 6R099 6R099 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor PDF

    6R099

    Abstract: CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220
    Contextual Info: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220 PDF

    6R099

    Contextual Info: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262-3-1 PG-TO262 6R099P 6R099 PDF

    6R099

    Abstract: 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP
    Contextual Info: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263 SP000088490 6R099 6R099 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP PDF

    6R099

    Abstract: IPP60R099CP 6r099 mosfet 6R099* TO220
    Contextual Info: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 IPP60R099CP 6r099 mosfet 6R099* TO220 PDF

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Contextual Info: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE PDF

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Contextual Info: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA PDF

    6R099

    Abstract: 6r099 mosfet
    Contextual Info: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 6r099 mosfet PDF