TRANSISTOR 7333 Search Results

TRANSISTOR 7333 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 7333 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
9275 transistor Abstract: transistor k 208 MPSA42 MPSA42 multicomp Contextual Info: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.	Original	MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp	PDF
MPSA42 Contextual Info: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.	Original	MPSA42 MPSA42	PDF
Transistor C G 774 6-1 Abstract: transistor 2N4033 2N4033 Contextual Info: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53	Original	2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033	PDF
2N3442 Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn Contextual Info: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage	Original	2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn	PDF
pin configuration transistor 2N2222A Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A Contextual Info: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.	Original	2N2222A pin configuration transistor 2N2222A NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A	PDF
transistor 7333 Abstract: BU426A Contextual Info: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.	Original	BU426A BU426A BU426A. transistor 7333	PDF
BUW12A Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V Contextual Info: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.	Original	BUW12A BUW12A. BUW12A transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V	PDF
high power transistor Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A Contextual Info: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.	Original	2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A	PDF
Transistor C G 774 6-1 Abstract: 2N3440 Contextual Info: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74	Original	2N3440 Transistor C G 774 6-1 2N3440	PDF
power switching 10 amp 60V Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).	Original	MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts	PDF
transistor for horizontal deflection output Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor Contextual Info: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.	Original	BU406 transistor for horizontal deflection output NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor	PDF
MPSA44 Abstract: ptc c 995 MA 2810 Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,	Original	MPSA44 MPSA44 ptc c 995 MA 2810	PDF
npn darlington transistor 200 watts Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806 Contextual Info: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.	Original	BU806 npn darlington transistor 200 watts transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806	PDF
pin configuration pnp transistor mpsa92 Abstract: mpsa92 MPSA42 9016 transistor Contextual Info: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,	Original	MPSA92 MPSA42. pin configuration pnp transistor mpsa92 mpsa92 MPSA42 9016 transistor	PDF

MPSA44 Abstract: 9016 transistor Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low	Original	MPSA44 MPSA44 9016 transistor	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
TO-92 CASE MPSA06 Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06 Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06	PDF
7333 A Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333 Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 7333 A transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
bf199 equivalent Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF Contextual Info: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40	Original	BF199 bf199 equivalent BF199 transistor NPN BF199 bf199 transistor BF199 RF	PDF
bf199 equivalent Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199 Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40	Original	BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199	PDF
80 amp 30v npn darlington Abstract: 2N6388 npn darlington transistor darlington power transistor 10a Contextual Info: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage	Original	2N6388 O-220 80 amp 30v npn darlington 2N6388 npn darlington transistor darlington power transistor 10a	PDF
BUX48 Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A Contextual Info: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48	Original	BUX48 BUX48A. BUX48A BUX48 TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A	PDF

TRANSISTOR 7333 Search Results

TRANSISTOR 7333 Result Highlights (5)

TRANSISTOR 7333 Datasheets Context Search

9275 transistor

MPSA42

Transistor C G 774 6-1

2N3442

pin configuration transistor 2N2222A

transistor 7333

BUW12A

high power transistor

Transistor C G 774 6-1

power switching 10 amp 60V

transistor for horizontal deflection output

MPSA44

npn darlington transistor 200 watts

pin configuration pnp transistor mpsa92

MPSA44

LG color tv Circuit Diagram schematics

IC HXJ 2038

TO-92 CASE MPSA06

7333 A

1N6227

bf199 equivalent

bf199 equivalent

80 amp 30v npn darlington

BUX48