TRANSISTOR 778 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

9275 transistor

Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Contextual Info: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.

MPSA42

Contextual Info: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.

Transistor C G 774 6-1

Abstract: transistor 2N4033 2N4033
Contextual Info: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53

2SC5872

Abstract: 2SC5849 HTT1129E
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor ADE-208-1541A Z Rev.1 Jan. 2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5849

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SC5849

Abstract: 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor ADE-208-1540 Z Rev.0 Nov. 2002 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

2N3442

Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
Contextual Info: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage

pin configuration transistor 2N2222A

Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
Contextual Info: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.

transistor 7333

Abstract: BU426A
Contextual Info: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.

transistor B 764

Abstract: transistor b 745 sot26 sot363 transistor 752 transistor transistor 778 D 756 transistor transistor 746 d 772 transistor
Contextual Info: Packaging Details Page D2P A K . DPAK - Rectifier. DPAK - Transistor.

BUW12A

Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
Contextual Info: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.

Transistor 2N2905A

Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

high power transistor

Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Contextual Info: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

0S121

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide