TRANSISTOR 80L Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

NTD409

Contextual Info: NEC SILICON DARLINGTON POWER TRANSISTOR NTD409 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable for hummer driver, pulse motor driver and relay driver applications.

2SC2756

Contextual Info: SILICON TRANSISTOR 2SC2756 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2756 is an NPN silicon e pita xial transistor intended fo r use as a V H F in m illim e te rs m ixer in a tu n e r o f a T V receiver. The device features are high conversion gain and lo w d is to rtio n .

3SK131

Abstract: 0580S
Contextual Info: MOS FIELD EFFECT TRANSISTOR 3SK131 RF AM P. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS • Su itab le fo r use as R F a m p lifie r in V H F T V tuner. in millim eter* • L o w C rIS : 0 .0 5 p F T Y P .

TC518512

Abstract: transistor D195
Contextual Info: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er

Contextual Info: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: International IOR Rectifier PD - 9 .1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

CB2203

Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance
Contextual Info: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.

Contextual Info: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS

Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS

PH1819-30

Abstract: PH1819
Contextual Info: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching

20irj

Abstract: EH25 0680L 2SA1934 2SC5176
Contextual Info: TO SH IBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A • High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SA1934

Abstract: 2SC5176
Contextual Info: TO SH IBA 2SA1934 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm DC-DC CONVERTER APPLICATIONS 10±0.2 101.2 • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A

TC518129AF-10

Contextual Info: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low

Contextual Info: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS

S0426

Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
Contextual Info: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0

V54C128

Contextual Info: gr VITELIC f V54C128 FAMILY HIGH PERFORMANCE, 128K x 8 BIT, PSEUDOSTA TIC, CMOS RAM ADVANCED 80/80L 10/10L 12/12L CE Access Time, tCEA 80 ns 100 ns 120 ns OE Access Time, (tQEA) 35 ns 40 ns 50 ns Min. Read-Write Cycle Time, (tRC) 130 ns 160 ns 190 ns HIGH PERFORMANCE V54C128

transistor D128

Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes

Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes

IR2E67M

Abstract: IR2E58U IRM053U7
Contextual Info: Analog LED DRIVERS ☆New • LED Drivers • Built-in Step-up Circuit 1  Model No. Function PQ6CB11X1CP White LED driver for backlight (for small panels) PQ7L2020BP IR2E58U White LED driver for backlight IR2E65U ☆IR2E71Y product LED driver for backlight and call

TC518129

Abstract: TC518129cpl transistor d155
Contextual Info: TOSHIBA TC518129CPL/CFWL/CFTL-70/80/10 TC518129CPL/CFWL/CFTL-70L/80L/ 10L SILICON GATE CMOS p r e l im in a r y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129C is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129C utilizes