TRANSISTOR 81 120 W 55 Search Results

2735GN-100

Abstract: transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band
Contextual Info: 2735GN-100 Rev 1 2735GN – 100M 100 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-100 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

Contextual Info: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

circuit diagram board

Abstract: 55-QP
Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 µs, 10% Radar 2700 - 2900 MHz CASE OUTLINE 55-QP Common Source GENERAL DESCRIPTION The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

2731GN

Contextual Info: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF

SOT 23 HHB

Contextual Info: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%

PSMN030-150P

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

SOT 23 HHB

Abstract: ADA4851-1 ADA4851-2 ADA4851-4 AEC-Q100 RU-14 ADA4851
Contextual Info: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%

2SD1616A

Contextual Info: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃

T35 diode

Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
Contextual Info: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

150B

Abstract: PSMN030-150B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN030-150B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 55.5 A

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

13MM

Abstract: PH1819-4N v6 4n diode
Contextual Info: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

GP 836 DIODE

Abstract: PH0810-4 ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
Contextual Info: VM &CO M m an A M P com pany Wireless Bipolar Power Transistor, 4W 850 - 960 MHz PH0810-4 Features • • • • • • • .725 _ 18.42 NPN Silicon Microwave Pow er T ran sistor D esigned for Linear Am plifier A pplications C lass AB: -30dBc Typ 3rd IMD at 4 Watts PEP

ADA4851-1YRJZ-R2

Abstract: HSB SOT-23-6 ADA4851-1 ADA4851-2 ADA4851-4 RU-14 HSB MSOP8
Contextual Info: Low Cost, High Speed, Rail-to-Rail Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%

SEMCO

Abstract: DU1230S SEMCO CL
Contextual Info: = - =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

HSB MSOP-8

Contextual Info: Low Cost, High Speed, Rail-to-Rail Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/µs slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%

TRANSISTOR BV 32

Abstract: Bv 42 transistor PH1617-30 K010 G177
Contextual Info: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting

93C24

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B

ADA4851-1

Abstract: ADA4851-2 ADA4851-4 RU-14
Contextual Info: Low Cost, High Speed, Rail-to-Rail, Output Op Amps ADA4851-1/ADA4851-2/ADA4851-4 PIN CONFIGURATIONS High speed 130 MHz, −3 dB bandwidth 375 V/ s slew rate 55 ns settling time to 0.1% Excellent video specifications 0.1 dB flatness: 11 MHz Differential gain: 0.08%

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

TRANSISTOR 3FT 81

Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration