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    TRANSISTOR 9016 Search Results

    TRANSISTOR 9016 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9275 transistor

    Abstract: transistor k 208 MPSA42 MPSA42 multicomp
    Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 MPSA42

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


    Original     		PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    9016 transistor

    Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    9016 transistor

    Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    9016 transistor

    Abstract: F 9016 transistor npn 9016 transistor
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    npn 9016 transistor

    Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF

    2N3442

    Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
    Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage


    Original     		PDF 2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    pin configuration transistor 2N2222A

    Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
    Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.


    Original     		PDF 2N2222A pin configuration transistor 2N2222A NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A

    transistor 7333

    Abstract: BU426A
    Text: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.


    Original     		PDF BU426A BU426A BU426A. transistor 7333

    BUW12A

    Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
    Text: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.


    Original     		PDF BUW12A BUW12A. BUW12A transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V

    high power transistor

    Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
    Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.


    Original     		PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


    Original     		PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    transistor for horizontal deflection output

    Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
    Text: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.


    Original     		PDF BU406 transistor for horizontal deflection output NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor

    MPSA44

    Abstract: ptc c 995 MA 2810
    Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,


    Original     		PDF MPSA44 MPSA44 ptc c 995 MA 2810

    npn darlington transistor 200 watts

    Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
    Text: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.


    Original     		PDF BU806 npn darlington transistor 200 watts transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806

    pin configuration pnp transistor mpsa92

    Abstract: mpsa92 MPSA42 9016 transistor
    Text: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,


    Original     		PDF MPSA92 MPSA42. pin configuration pnp transistor mpsa92 mpsa92 MPSA42 9016 transistor

    MJ4502

    Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
    Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.


    Original     		PDF MJ4502 750mA. MJ4502 MJ4502 EQUIVALENT transistor mj4502 A3105

    MPSA44

    Abstract: 9016 transistor
    Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low


    Original     		PDF MPSA44 MPSA44 9016 transistor

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


    OCR Scan     		PDF MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF