TRANSISTOR 91 330 Search Results

BUZ91A

Abstract: buz91
Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vds 600 V b 8A ^DS on Package Ordering Code 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current Values Id

Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

buz91a

Abstract: transistor buz91 C67078-S1342-A3 BUZ-91a 6C35
Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vbs 600 V h ff DS on Package Ordering Code 8A 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values

" transistor" fgs 3

Abstract: Fly DS 100
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ91

Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G Type Vds b ^DS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 £2 TO-220 AB C67078-S1342-A3 Maxim um Ratings Parameter Symbol Continuous drain current

60F10

Abstract: C67078-S1342-A2
Contextual Info: BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 600 V 8.5 A 0.8 Ω TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol

BUZ 91

Abstract: transistor buz 350 C67078-S1342-A3 600V8A
Contextual Info: BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current

transistor buz 350

Abstract: BUZ 330 C67078-S1342-A3 buz 91 f
Contextual Info: Not for new designs BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol

transistor l7805cv

Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
Contextual Info: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor

2903 D

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • ÜSDM33Ö DQQBbTì M ■ ALGR T-91-01 PROCESS JEA Process JE A NPN High-Voltage Darlington Transistor Process J E A is a double-diffused epitaxial planar silicon Darlington pair. It is designed for use in highvoltage, high-gain amplifier circuits.

667 transistor ecb

Abstract: EVL32-060 A50L-0001-0109
Contextual Info: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)

AN4502

Abstract: AN4503 AN4505 AN4506 GP800NSM33
Contextual Info: GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 3300V Rating ■ 800A Per Module

ldr 10k

Abstract: LDR 07 equivalent Antenna Coil 330uh NIPPON CAPACITORS LDR 20K SM8142AD 3 pins LDR Datasheet transistor 91 330 LDR Datasheet ldr resistor
Contextual Info: SM8142 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a

transistor 91 330

Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
Contextual Info: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

transistor 91 330

Abstract: NIPPON CAPACITORS
Contextual Info: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

LDR 5K

Abstract: LDR 3PIN transistor current booster circuit ldr 10k of LDR 5K NIPPON CAPACITORS SM8142BD Circuit diagram of LDR ldr resistor 1SS370
Contextual Info: SM8142 Application Note EL Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a

Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

K2400F1

Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
Contextual Info: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region

K24008

Contextual Info: Do not use m ounting tab or center lead, electrica lly connected SIDAC 95 - 330 Volts General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage

Metal Halide Lamp Ignitor

Abstract: OSRAM ignitor K1190 K24008 hid lamp ignitor application notes SIDAC transistor tl 187 ignitor for sodium K10S0E7 transistor 91 330
Contextual Info: DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use m ounting tab or center lead, electrically connected SIDAC 95 - 330 Volts General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon

AM417

Abstract: Wheatstone Bridge amplifier Wheatstone Bridge operational amplifier wheatstone bridge interface WITH ADC Instrumentation Amplifier IC SOP08 5V11mA "Instrumentation Amplifier" AM467 BC557C
Contextual Info: AM417 – Ratiometric instrumentation amplifier with adjustable output stage PRINCIPLE FUNCTION Integrated instrumentation amplifier with an output stage for the amplification of differential signals and with an internal current source for the supply of external signal sources. The

h8ps OMRON Operation Manual

Abstract: H8PS-8BFP OMRON H8Ps H8PS-8BF H8PS-8BP omron H8PS-8BFP WIRING DIAGRAM FOR H8PS RPM METER Y92C-30 H7ER
Contextual Info: H8PS H8PS Cam Positioner H8PS Economical Cam Positioner Does the Work of Eight Cam Switches • Easy replacement of mechanical cam switches with absolute encoder input ■ Simple to set, with single-function keys ■ Accepts 330-rpm input, ideal for use with a