TRANSISTOR A 1015 Search Results
TRANSISTOR A 1015 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CA3082 |
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CA3082 - Small Signal Bipolar Transistor |
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CA3081F |
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CA3081 - Small Signal Bipolar Transistor |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TRANSISTOR A 1015 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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MUN5311DW1T1 MUN5316DW1T1 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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1015 TRANSISTOR DATASHEET
Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
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25oC2 1015 TRANSISTOR DATASHEET transistor 1015 transistor a 1015 1015 TRANSISTOR | |
Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers |
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BFQ149 | |
1015MPContextual Info: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. |
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1015MP 25oC2 150oC 200oC 1015MP | |
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
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PHP12N10E T0220AB PHP12N1OE | |
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device |
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BUK7618-55 | |
1015 TRANSISTOR DATASHEET
Abstract: 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR
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1015MP 55FW-1 25oC2 1015 TRANSISTOR DATASHEET 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR | |
PBSS306NZ
Abstract: PBSS306PZ SC-73 PBSS306PZ,135
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PBSS306PZ OT223 SC-73) PBSS306NZ. PBSS306PZ PBSS306NZ SC-73 PBSS306PZ,135 | |
S306PZ
Abstract: PBSS306NZ PBSS306PZ SC-73
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PBSS306PZ OT223 SC-73) PBSS306NZ. PBSS306PZ S306PZ PBSS306NZ SC-73 | |
MJE-13001
Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
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MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001 | |
MJE-13001
Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
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MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92 | |
QT14
Abstract: QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech
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15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz QT14 QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech | |
54616BContextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT |
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15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz 54616B | |
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transistor TO5 Outline DimensionsContextual Info: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT |
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15Vdc 045Hz 125MHz EAR99 MIL-PRF-55310/09 and/10 10kHz 20MHz, transistor TO5 Outline Dimensions | |
qt116
Abstract: QT1T qt11 transistor TO5 Outline Dimensions
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15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10K/10KH qt116 QT1T qt11 transistor TO5 Outline Dimensions | |
transistor TO5 Outline Dimensions
Abstract: TO-5 PACKAGE case for transistor
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15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz transistor TO5 Outline Dimensions TO-5 PACKAGE case for transistor | |
Contextual Info: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. |
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PBSS306PZ OT223 SC-73) PBSS306NZ. AEC-Q101 | |
Contextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT |
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15Vdc 045Hz 125MHz EAR99 M17677 125MHz MIL-PRF-55310/09 and/10 10kHz | |
S306PZContextual Info: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. |
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PBSS306PZ OT223 SC-73) PBSS306NZ. AEC-Q101 S306PZ | |
A1015 smd typeContextual Info: PBSS306PX 100 V, 3.7 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. |
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PBSS306PX SC-62/TO-243) PBSS306NX. PBSS306PX A1015 smd type | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R |
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MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B | |
MJE13001Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R |
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MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001 | |
Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
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O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 |