TRANSISTOR A 1015 Search Results

Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

1015 TRANSISTOR DATASHEET

Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
Contextual Info: 1015 MP 15 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers

1015MP

Contextual Info: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device

1015 TRANSISTOR DATASHEET

Abstract: 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR
Contextual Info: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for

PBSS306NZ

Abstract: PBSS306PZ SC-73 PBSS306PZ,135
Contextual Info: PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S306PZ

Abstract: PBSS306NZ PBSS306PZ SC-73
Contextual Info: PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

MJE-13001

Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R

MJE-13001

Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R

QT14

Abstract: QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech
Contextual Info: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

54616B

Contextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

transistor TO5 Outline Dimensions

Contextual Info: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

qt116

Abstract: QT1T qt11 transistor TO5 Outline Dimensions
Contextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

transistor TO5 Outline Dimensions

Abstract: TO-5 PACKAGE case for transistor
Contextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

Contextual Info: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT

S306PZ

Contextual Info: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

A1015 smd type

Contextual Info: PBSS306PX 100 V, 3.7 A PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R

MJE13001

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)