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    TRANSISTOR A 1241 Search Results

    TRANSISTOR A 1241 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSC3076 O-251

    1241 transistor

    Abstract: KSC3076 transistor a 1241
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 I-PACK ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic Symbol VCBO 50 V Collector Emitter Voltage


    Original     		PDF KSC3076 1241 transistor KSC3076 transistor a 1241

    KSC3076

    Abstract: No abstract text available
    Text: KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSC3076 KSC3076

    305 d-pack

    Abstract: No abstract text available
    Text: FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF FJD3076 305 d-pack

    SOT 23 AJW

    Abstract: ATF-54143 ATF55143 ATF-55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low


    Original     		PDF ATF-55143 ATF-55143 5988-3399EN SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    ATF-55143

    Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation
    Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz


    Original     		PDF ATF-55143 ATF-55143 ATF55143 5988-3399EN 5989-3007EN agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation

    fc1a-cla

    Abstract: PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
    Text: U905 Catalog Section A note from IDEC: Due to continuous product improvements, specifications are subject to change without notice. For up-to-date information, or to request a full copy of this catalog, please visit us at www.idec.com Programmable Logic Controllers


    Original     		PDF CP11T CP12/13 fc1a-cla PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    transistor b 1238

    Abstract: fld pcb
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9840-55 OT223 OT223. transistor b 1238 fld pcb

    a1241

    Abstract: k 1241 transistor SA1241
    Text: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage


    OCR Scan     		PDF KSC3076 a1241 k 1241 transistor SA1241

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • Low C ollector Em itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 50 V C ollector Em itter Voltage


    OCR Scan     		PDF KSC3076

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    2SA1241

    Abstract: 2SC3076
    Text: T O S H IB A 2SC3076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Collector Saturation V oltage : V CE (sat) = 0.5 V (Max.) (IC = 1 A) E xcellen t Sw itching Tim e : tgtg = 1.0


    OCR Scan     		PDF 2SC3076 2SA1241 2SA1241 2SC3076

    2SD1340P

    Abstract: 2SD1340
    Text: 2 S D 1340P No.1241 SANYO NPN Triple Diffused Planar Type Silicon Transistor For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. Absolute Maximum Ratings at T a = 2 5 ° C


    OCR Scan     		PDF 2SD1340P VfcC-200V 1203KI 2SD1340P 2SD1340

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


    OCR Scan     		PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F)

    2SD1898

    Abstract: 2SD1863 B1241 D1733
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) High V ceo. V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 3) Good hFE linearity. 4) 1.6 ± 0 1 r— 1 -m Low VcE(sat).


    OCR Scan     		PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S SC-62 2SD1768S 2SD1898 2SD1863 B1241 D1733

    b1241

    Abstract: 2SD189
    Text: Transistors Power Transistor -80V , -1A 2SB1260/2SB1181/2SB1241 # F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) H igh breakdow n voltage and high current. V ceo = —80V, Ic = —1A 2) G ood hFE linearity. 3) Low VcE(sat). 4) C om plem ents the 2SD189 8/


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 --80V, 2SD189 2SD1863/2SD1733. 96-123-B54) 2SB126 O-220, 0Dlb713 O-220FN b1241

    stb 1277 TRANSISTOR equivalent

    Abstract: MSC 1691 transistor 1201 1203 1205 B3c1 RF NPN POWER TRANSISTOR C 10-12 GHZ BFS505 FC 0137 transistor Bf 966 msc 1697 transistor bf 979
    Text: Philips Sem iconductors b L S B IB l N A tlE R 0 0 B 5 2 clL i T tiT IH A P X P H IL IP S /D IS C R E T E Product specification b?E D NPN 9 GHz wideband transistor BFS505 PIN CONFIGURATION PINNING FEATURES PIN DESCRIPTION • Low current consumption • High power gain


    OCR Scan     		PDF BFS505 OT323 MBC670 OT323. stb 1277 TRANSISTOR equivalent MSC 1691 transistor 1201 1203 1205 B3c1 RF NPN POWER TRANSISTOR C 10-12 GHZ BFS505 FC 0137 transistor Bf 966 msc 1697 transistor bf 979

    Philips FA 261

    Abstract: No abstract text available
    Text: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •


    OCR Scan     		PDF BFS505 OT323 MBC87I0 OT323. OT323 Philips FA 261

    Untitled

    Abstract: No abstract text available
    Text: MSSI121/241/241B M O S E L V IT E L IC INSTANT VOICE ROM Features • Single power supply can operate at 2.4V through 6V. ■ Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. ■ The voice content is stored for 7-12 seconds for


    OCR Scan     		PDF MSSI121/241/241B SI121 SI241/241B MSM9159 MSM9159B MSSI121/241/241B PID224B

    HA12413

    Abstract: 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701
    Text: H A 1 2 4 1 3 FM/AM IF SYSTEM The H IT A C H I H A 12413 is an IC fo r FM /A M IF system. Typical applications include cassette radios and modular stereos, fu n ctio ning and featuring as follow s. • FUNCTI ONS FM • IF A m p lilfie r With C.F. is inserted between the stages


    OCR Scan     		PDF HA12413 DP-16) 33dBju) --45dB --10dBju) 455kH 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo


    OCR Scan     		PDF KSC3076

    Untitled

    Abstract: No abstract text available
    Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol 50 V C ollecto r E m itter Voltage


    OCR Scan     		PDF KSC3076

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode