Untitled
Abstract: No abstract text available
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06
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MMBT3906T
OT-523F
MMBT3904T
MMBT3906T
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marking A06
Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application
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MMBT3906T
OT-523F
MMBT3904T
MMBT3906T
marking A06
marking A06 amplifier
KTMC1060SC
transistor j25
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a0629
Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
Text: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.
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2SC3807MP
ENA0629
VEBO15V)
A0629-4/4
a0629
2SC3807MP
A0629-1
VEBO-15V
IT11926
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transistor A2210
Abstract: ENA0667B 2sa2210 2SA2210-1E
Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes
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ENA0667B
2SA2210
150ement,
A0667-7/7
transistor A2210
ENA0667B
2sa2210
2SA2210-1E
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transistor A2210
Abstract: 2SA2210
Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes
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2SA2210
ENA0667B
A0667-7/7
transistor A2210
2SA2210
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transistor A2210
Abstract: a2210 2sa2210
Text: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes
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ENA0667A
2SA2210
A0667-5/5
transistor A2210
a2210
2sa2210
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2SA2210
Abstract: equivalent transistor 2sa2210 A0667-1 2SA221 A0667
Text: 2SA2210 Ordering number : ENA0667 SANYO Semiconductors DATA SHEET 2SA2210 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT processes.
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2SA2210
ENA0667
A0667-4/4
2SA2210
equivalent transistor 2sa2210
A0667-1
2SA221
A0667
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2SC6084
Abstract: No abstract text available
Text: 2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).
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2SC6084
ENA0630
A0630-4/4
2SC6084
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2SA2210-1E
Abstract: transistor A2210
Text: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage
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ENA0667B
2SA2210
O-220F-3SG
A0667-7/7
2SA2210-1E
transistor A2210
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A06 smd
Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBTA05
CMBTA06
C-120
A06 smd
A06 smd transistor
SMD A06
a06 transistor
A05 smd
A05 SOT
marking a06
CMBTA05
CMBTA06
transistor A06
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MMDTA06
Abstract: a06 transistor marking a06
Text: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power
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MMDTA06
AEC-Q101
J-STD-020
MIL-STD-202,
DS35114
MMDTA06
a06 transistor
marking a06
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a06 smd transistor
Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBTA05
CMBTA06
C-120
a06 smd transistor
A06 SMD
SMD A06
smd marking A06
A05 smd
a06 transistor
transistor A05
marking A06
CMBTA05
CMBTA06
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P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2640
DSFP-TP2640
A062609
P2640
125OC
TP2640
TP2640ND
TP2640LG-G
to92 fet p channel
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P-Channel FET 100v to92
Abstract: FAST DMOS FET Switches p-CHANNEL 125OC TP2635
Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2635
DSFP-TP2635
A062209
P-Channel FET 100v to92
FAST DMOS FET Switches p-CHANNEL
125OC
TP2635
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Untitled
Abstract: No abstract text available
Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling
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TP2635
DSFP-TP2635
A062209
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Untitled
Abstract: No abstract text available
Text: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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VN2222NC
VN2222NC
MS-030,
DSPD-20CDIPCNC,
B061608.
DSFP-VN2222NC
A061608
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Untitled
Abstract: No abstract text available
Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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235b05
G0G4352
Q62702-D1068
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Transistor 2SC 2166
Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Text: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.
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aE35b05
BSV65
Transistor 2SC 2166
transistor IR 652 P
2166 1j1
bsv 81
X12X15
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c111m
Abstract: Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S355 Q62702-S428 1E0C BSV65 Q62702-S347 Q62702-S348 Q62702-S406
Text: ESC D • aE 35b05 0 0 0 4 6 0 2 H ■ S I E G NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - , ° y v jr-// BSV 65 ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 23 A 3 DIN 41869 designed for use in thick and thin film circuits.
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Q62702-S
fi235bOS
BSV65
c111m
Transistor 2SC 2166
TRANSISTOR C-111
Q62702-S355
Q62702-S428
1E0C
BSV65
Q62702-S347
Q62702-S348
Q62702-S406
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Untitled
Abstract: No abstract text available
Text: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications
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SSTA06/M
MSTA06/M
SSTA06
SSTA56/MMSTA56/MPSA56.
MMSTA06
MPSA06
O-220FN
O-220FN
O220FP
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sta06
Abstract: mark T116
Text: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications
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A06/MMSTA06/MPSA06
STA06
PSA06
SSTA06
STA06,
SSTA06
MMSTA06
MPSA06
mark T116
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 "^^009 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.89" 0.60 0.40
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CMBTA05
CMBTA06
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