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    TRANSISTOR A10 Search Results

    TRANSISTOR A10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A1012

    Abstract: a1012 transistor UTC A1012 A1012
    Text: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNPEPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for silicon current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(MAX.) at Ic=-3A *High speed switching time Tstg=1.0us(Typ.)


    Original     		PDF A1012 A1012 2SC2562 O-220 transistor A1012 a1012 transistor UTC A1012

    a1012 transistor

    Abstract: transistor A1012 a1012 a1012* transistor
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		PDF 2SA1012 A1012 2SC2562 O-220 QW-R203-015 a1012 transistor transistor A1012 a1012* transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		PDF 2SA1012 A1012 2SC2562 O-252 QW-R209-008

    2SA1020L UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020L UTC

    DSP56300

    Abstract: DSP56303 G38-87 AA0482
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or


    Original     		PDF DSP56303 AA0500 DSP56303/D DSP56300 G38-87 AA0482

    Response AA0482

    Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or


    Original     		PDF DSP56302 AA0500 DSP56302/D Response AA0482 AA0463 AA0470 AA0482 284 278 DSP56300 G38-87 AA-0481 AA0460

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K

    EM7164SU16

    Abstract: No abstract text available
    Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision


    Original     		PDF EM7164SU16 1Mx16 690-7t 100ns 120ns

    T6661

    Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor MMFT6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for


    Original     		PDF MMH6661T1/D MMFT6661TI OT-223 602-2WW9 MMm6661T1/D T6661 MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: S P R A G U E /S E N IC O N D GROUP 85 14 0 1 9 SPRAGUE. - ^ D • S E M I C O N D S / ICS fiS13Û S 0 D 0C I3flD 7^ 93D 03807 3 SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O PRAGUE SERIES TPQ quad transistor arrays ^ are general-purpose silicon transistor arrays


    OCR Scan     		PDF fiS13Ã 14-pin 0-050A TPQ2221 TPQ2221A 2N3799 TPQ6600A TPQ6700 TPQ7051 TPQ7052

    2N2222A plastic package

    Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
    Text: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQ2222A TPQ3904 TPQ2907A TPQ3906 TPQ6502 2N2222 2N2907 2N2907A 2N3904 2N2222A plastic package transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QUAD TRANSISTOR ARRAYS Series T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQ2222A TPQ3904 TPQ2907A 2N2222 TPQ3906 TPQ6502

    TPQ2222

    Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
    Text: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic


    OCR Scan     		PDF 14-pin TPQ2222 TPQ2222A TPQ2369 TPQ6427 TPQ3904 TPQA06 TPQA05 TPQ2907 TPQ2907A TPQ6700 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ6002

    transistor 2N 3904

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQA05 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56 TPQ2907A TPQ3906 transistor 2N 3904

    a1015gr

    Abstract: A1015Y a1015-y A1015G A1015-GR transistor A1015Y A1015Y TE A-1015gr 2PA1015 transistor C 1815
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor 2PA1015


    OCR Scan     		PDF 2PA1015 115002/00/03/pp8 a1015gr A1015Y a1015-y A1015G A1015-GR transistor A1015Y A1015Y TE A-1015gr 2PA1015 transistor C 1815

    uln2047a

    Abstract: ULN-20
    Text: SPRAGUE/SEm COND 8 5 1 4 0 1 9 SP RA GU E. GROUP T3 ]> • fiS13flSD DDD3Ö17 7 93D S E M I C O N D S / ICS ULN-2047A TRANSISTOR ARRAY ULN-2047A TRANSISTOR ARRAY Three Differential Amplifiers ’T 'Y P E ULN-2047A is a silicon NPN multiple transistor array comprising three independent dif­


    OCR Scan     		PDF fiS13flSD ULN-2047A 16-lead 16-pin -2031A LN-2086A ULS-2045H uln2047a ULN-20

    TEA-1035

    Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
    Text: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK1292 2SK1292 IEI-1209) TEA-1035 Low Forward Voltage Diode MEI-1202

    Response AA0482

    Abstract: 49/Response AA0482
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


    OCR Scan     		PDF DSP56303 Response AA0482 49/Response AA0482

    itt 3906

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.


    OCR Scan     		PDF 14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network


    OCR Scan     		PDF MUN2211/D MUN2211 MUN2212 MUN2213

    2n390g

    Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine N PN /PN P dual complementary pairs.


    OCR Scan     		PDF 14-lead 2N3799 TPQ3906 TPQ6001 2N2221/2N2906 TPQ6002 2N2222/2N2907 TPQ6100 2N2483/2N3798 TPQ6100A 2n390g 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700

    BFS20R

    Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
    Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed


    OCR Scan     		PDF a23Sb05 Q62702-F350 Q62702-F589 BFS20R IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor