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GRT155R61A106ME13J
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Murata Manufacturing Co Ltd
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0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
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GRT155R61A106ME13D
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Murata Manufacturing Co Ltd
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0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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