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    TRANSISTOR A6 Search Results

    TRANSISTOR A6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab

    C2E1

    Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 transistor QCA75A60 QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    MARKING A6C SOT-23

    Abstract: transistor A6A SOT-23 marking a6c sot23 marking A6g sot23 marking A6L MMUN2111LT1 MMUN2111LT3 MMUN2112LT3 MMUN2113LT1 MMUN2114LT1
    Text: MMUN2111LT1 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


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    PDF MMUN2111LT1 OT-23 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MARKING A6C SOT-23 transistor A6A SOT-23 marking a6c sot23 marking A6g sot23 marking A6L MMUN2111LT1 MMUN2111LT3 MMUN2112LT3 MMUN2113LT1 MMUN2114LT1

    transistor A6A

    Abstract: A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114
    Text: MMUN2111MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


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    PDF MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114

    transistor A6A

    Abstract: transistor a6f a6j* pnp transistor MARKING A6C SOT-23 SOT-23 A6A k 49 transistor code A6J A6k SURFACE MOUNT MMUN2111 MMUN2112
    Text: MMUN2111 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting


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    PDF MMUN2111 OT-23 MMUN2132 MMUN2133 MMUN2134 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A transistor a6f a6j* pnp transistor MARKING A6C SOT-23 SOT-23 A6A k 49 transistor code A6J A6k SURFACE MOUNT MMUN2111 MMUN2112

    transistor A6A

    Abstract: a6j* pnp transistor transistor a6f A6F SURFACE MOUNT A6k SURFACE MOUNT MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115
    Text: MMUN2111MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


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    PDF MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 transistor A6A a6j* pnp transistor transistor a6f A6F SURFACE MOUNT A6k SURFACE MOUNT MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115

    A6k SURFACE MOUNT

    Abstract: transistor A6j MMUN2115 a6j* pnp transistor transistor a6f MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2116
    Text: MMUN2111MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias


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    PDF MMUN2111. MMUN2134 OT-23 MMUN2133 MMUN2111/MMUN2112/MMUN2113 MMUN2114 MMUN2115/MMUN2116 MMUN2130/MMUN2131/MMUN2132 A6k SURFACE MOUNT transistor A6j MMUN2115 a6j* pnp transistor transistor a6f MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2116

    a6j* pnp transistor

    Abstract: marking A6f MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network


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    PDF MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1 MMUN2133RLT1 a6j* pnp transistor marking A6f MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1 MMUN2114RLT1 MMUN2115RLT1 MMUN2116RLT1 MMUN2130RLT1 MMUN2131RLT1

    A6T TRANSISTOR

    Abstract: transistor a6t A6t SOT23 sot23 marking A6T
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144TLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTA144TLT1G OT-23 A6T TRANSISTOR transistor a6t A6t SOT23 sot23 marking A6T

    LDTA123TLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123TLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTA123TLT1G OT-23 LDTA123TLT1G

    LDTA114YLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA114YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTA114YLT1G OT-23 LDTA114YLT1G

    transistor A6U

    Abstract: radio a6u LDTA115TLT1G 100MHZ
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA115TLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTA115TLT1G OT-23 transistor A6U radio a6u LDTA115TLT1G 100MHZ

    A6k SURFACE MOUNT

    Abstract: transistor A6K LDTA143ZLT1G A6K resistor LDTA143ZLT3G A6K MARKING
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA143ZLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTA143ZLT1G OT-23 A6k SURFACE MOUNT transistor A6K LDTA143ZLT1G A6K resistor LDTA143ZLT3G A6K MARKING

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2SC5170

    Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for


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    PDF 2SC5170 2SC5170 100Hz) 110mVtyp X10-3 LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR

    ksp8097

    Abstract: 2N5088
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • CoHector-Emitter Voltage: V c e o “ 2 5 V • Collector Dissipation :P C max a625mW ABSOLUTE MAXIMUM RATINGS (TA=25T) C h aracteristic Collector-Base Voltage Collector-Em ttter Voltage Em itter-Base Voltage


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    PDF KSP8097 a625mW 2N5088 100mA, 300is ksp8097

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    A6251

    Abstract: BA6260 A6251 M DARLINGTON TRANSISTOR ARRAY
    Text: Standard tCs 7-channel Darlington transistor array BA6250/B A6250F/B A6251/B A6251F The BA6250, BA6250F, BA6251, and BA6251F are 7-channef transistor arrays particularly suitable for interfaces be­ tween a microcomputer in a VTR and the various ICs, or between one IC and another, and for low current drives


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    PDF BA6250/B A6250F/B A6251/B A6251F BA6250, BA6250F, BA6251, BA6251F BA6250/BA6250F BA6251/BA6251F A6251 BA6260 A6251 M DARLINGTON TRANSISTOR ARRAY

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


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    PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN

    SOT223 marking SG

    Abstract: MARKING SG SOT223 marking sot223 GY
    Text: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN


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    PDF PZT4403 PZT4403 OT223 PZT4401. ZT4403 OT223) 15002/00/01/pp8 SOT223 marking SG MARKING SG SOT223 marking sot223 GY

    D1133

    Abstract: transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321 FJH321A
    Text: T.T.L. SEXTUPLE SINGLE INPUT INVERTER GATES FIH 3 2 I FJH3 2 IA Corresponds to 74 Series type 7405AIM P R O V IS IO N A L D A T A These d evices are transistor-transistor logic sextuple single-input inverter gates, with a single-ended open collector output transistor, in the FJ s e r ie s of integrated


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    PDF FIH32I FJH32IA 7405AN FJH321 7405AN. O-116 FJH321-Page D1133 D1133 transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321A

    PN2222A

    Abstract: 1041A
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PN2222A NPN switching transistor 1999 May 21 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PN2222A FEATURES


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    PDF PN2222A PN2907A. 115002/00/03/pp8 PN2222A 1041A

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV64B PNP general purpose double transistor Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor


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    PDF BCV64B BCV64B OT143B BCV63B. MAM29lconductors 115002/00/03/pp8