TRANSISTOR AF 245 Search Results

transistor tic 106

Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.

Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200

2SA1436

Abstract: ITR03612 ITR03613 ITR03614 ITR03615
Contextual Info: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .

Contextual Info: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP 8CH High Voltage Source Driver Product Description: These products are comprised of eight source current Transistor Arrays. These drivers are specifacally designed for flourescent

2SA1436

Abstract: ITR03612 ITR03613 ITR03614 ITR03615
Contextual Info: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .

2sa143

Abstract: VEBO-15V 2SA1436 SAT800
Contextual Info: Ordering number:EN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .

TD62387APG

Abstract: TD62388APG TD62386 DIP20 TD62386AFG TD62386APG TD62387AFG TD62388AFG
Contextual Info: TD62386,387,388AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62386APG, TD62386AFG, TD62387APG TD62387AFG, TD62388APG, TD62388AFG 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62386APG, TD62386AFG, TD62387APG, TD62387AFG and TD62388APG, TD62388AFG are non−inverting transistor

Contextual Info: TD62386,387,388AP/AF TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62386AP,TD62386AF,TD62387AP TD62387AF,TD62388AP,TD62388AF 8 Ch Low Input Active Darlington Sink Driver The TD62386AP, TD62386AF, TD62387AP, TD62387AF and TD62388AP, TD62388AF are non−inverting transistor arrays,

HBC807

Abstract: HBC817
Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver

HSC1815

Abstract: diode marking H2
Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

HSA1015

Contextual Info: HI-SINCERITY Spec. No. : HE6512 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose

A4Y MARK SOT-23

Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

HM965

Contextual Info: HI-SINCERITY Spec. No. : HE9511 Issued Date : 1996.04.12 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM965 is designed for use as AF output amplifier and glash unit. SOT-89 Features

HE6805

Abstract: HMBT1815 transistor C4G sot-23 MARK C4G
Contextual Info: HI-SINCERITY Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2004.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.

HSA733

Abstract: frequancy
Contextual Info: HI-SINCERITY Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSA733 PNP Epitaxial Planar Transistor Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings

SD965

Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
Contextual Info: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings

Contextual Info: HI-SINCERITY Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2004.08.09 Page No. : 1/5 MICROELECTRONICS CORP. HSA733 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings

HBC817

Abstract: hbc8
Contextual Info: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

HBC848

Contextual Info: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

HBC548

Contextual Info: HI-SINCERITY Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

HE6851

Abstract: HBC858
Contextual Info: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

HBC807

Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

HBC847

Contextual Info: HI-SINCERITY Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.