TRANSISTOR AH1 Search Results

D1649

Abstract: GA4F4Z
Contextual Info: DATA SHEET SILICON TRANSISTOR GA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 • Resistors built-in type 0.15 +0.1 −0.05 Marking • Complementary to GN4xxx ORDERING INFORMATION PART NUMBER

fa4a4

Abstract: 5AN1
Contextual Info: DATA SHEET SILICON TRANSISTOR FA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES +0.1 0.65 –0.15 • Compact package • Resistors built-in type 0.4 +0.1 –0.05 +0.1 • Complementary to FN4xxx 0.16 –0.06 Marking PACKAGE

D1649

Abstract: GA4F4Z
Contextual Info: DATA SHEET SILICON TRANSISTOR GA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 +0.1 −0 • Compact package 0.15 +0.1 −0.05 Marking • Resistors built-in type • Complementary to FN4xxx ORDERING INFORMATION PART NUMBER

IC AH1

Contextual Info: DATA SHEET SILICON TRANSISTOR FA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES +0.1 0.65 –0.15 • Compact package • Resistors built-in type 0.4 +0.1 –0.05 +0.1 0.16 –0.06 • Complementary to FN4xxx ORDERING INFORMATION

D1649

Abstract: GA4F4Z
Contextual Info: DATA SHEET SILICON TRANSISTOR GA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES ★ PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 −0 • Resistors built-in type 0.15 +0.1 −0.05 Marking • Complementary to GN4xxx PART NUMBER PACKAGE GA4xxx

D1649

Abstract: transistor sc59 marking FA4F3R
Contextual Info: DATA SHEET SILICON TRANSISTOR FA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES ★ PACKAGE DRAWING Unit: mm • Compact package +0.1 0.65 –0.15 • Resistors built-in type • Complementary to FN4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE

160711

Abstract: 59018 transistor 5-1147 transistor 59018 123078 154543 39058 TARF1509U 59818 68207
Contextual Info: Preliminary TARF1509U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1509U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: bcp53 SOT-223 BCP53-16T1 sot 223 marking code AH BCP53 AH-16 transistor bcp53 transistor datasheet TRANSISTOR AH-10 BCP53-10T1 BCP53-10T1G
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 ah-16 sot-223 body marking D K Q F AH MARKING SOT223 Transistor AH10 ah16 AH-16 npn BCP53-10T1
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

49431

Abstract: 78561 7651-4 Series 16-2-682 85-497 141834 B 1184 ic 76820 pin configuration THN4301Z OF IC 7912
Contextual Info: THN4301 Series Semiconductor SiGe NPN Transistor SOT-523 □ Application Unit in mm LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain

ISO 9141-2

Abstract: PDTA144E ISO 16750-2 UJA1076A TJA1028 AH1002 UJA1078A UJA1078 UJA107xA UJA1075
Contextual Info: AH1002 Application Hints Core System Basis Chip UJA107xA Version 1.0 — 25 June 2010 Document information Info Content Title UJA107xA Core System Basis Chip Application Hints Author s Jens Fleischhacker, Janett Habermann Department Systems & Applications (AIC)

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

250v 3 terminal voltage regulator

Abstract: t85 diode 125V T105 enec t105 T105 switch diode t85 115 2a 250v T105 Reliable Basic Switches hp 3101 pin T105
Contextual Info: SnapActionSwitch_neu.book Seite 118 Montag, 20. Oktober 2008 4:03 16 AHF2 AHF2 TIP SWITCHES SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body:

kyocera oscillator

Abstract: transistor 5633 transistor P84 transistor KF 517
Contextual Info: Ordering number: EN 5633 _ CMOS LSI LC865032A, 865028A, 865024A 8-Bit Single-Chip Microcontroller Package Dimensions Overview unit : mm The LC865032A/28A/24A microcontrollers are 8-bit single­ chip microcontrollers with the following on-chip functional

Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining

Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining

Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining

Contextual Info: Surface Mount Dual Matched MMIC Amplifier 50Ω PHA-11+ .05 to 3 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH11a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-11+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining