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    TRANSISTOR AHS Search Results

    TRANSISTOR AHS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AHS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.


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    BUK582-60A OT223 PDF

    transistor AHs

    Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


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    BUK9608-55 transistor AHs PDF

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK457-400B T0220AB PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    C5052

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


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    BUK107-50DS 1E-07 1E-05 1E-03 C5052 PDF

    bd ips

    Abstract: BUK104-50L BUK104-50S ips bd a50l
    Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbiB'iBl 00301*0? flTfi « A P X Philips Specification PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP


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    bb53131 BUK104-50I7S BUK104-50LP/SP BUK104-50L/S bd ips BUK104-50L BUK104-50S ips bd a50l PDF

    transistor sl 431

    Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK102-50GL Logic level TOPFET_ _ For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level po


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    BUK102-50GL transistor sl 431 PDF

    diagram LG 21 fs 4 bg model circuits

    Abstract: BQ 15 Transistor transistor DA 313 K2015 BT 316 transistor
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch_ _ _ DESCRIPTION Monolithic temperature and overload protected power switch based on MQSFET technology in a 5 pin plastic envelope, configured


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    BUK201-50X BUK201-50X 201-50X diagram LG 21 fs 4 bg model circuits BQ 15 Transistor transistor DA 313 K2015 BT 316 transistor PDF

    C5024

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general


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    BUK102-50GL C5024 PDF

    BUK202-S0Y

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    BUK202-S0Y BUK202-50Y BUK202-5QY PDF

    K2025

    Abstract: k202 uk202
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    BUK202-50X 100\is K2025 k202 uk202 PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


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    BUK110-50GL isl25 PDF

    BUK202-50Y

    Abstract: buk20250y
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured


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    BUK202-50Y BUK202-50Y buk20250y PDF

    K203

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured


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    BUK203-50Y BUK203-50Y K203 PDF

    mosfet protection circuit diagram

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION APPLICATIONS General controller for driving • lamps • small motors • solenoids FEATURES QUICK REFERENCE DATA SYMBOL PARAMETER CO O > Monolithic overload protected logic


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    BUK107-50DL 1E-07 1E-05 1E-03 1E-01 mosfet protection circuit diagram PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


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    BUK110-50GS PDF

    K2025

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    BUK202-50X K2025 PDF

    k104 transistor

    Abstract: NMOS Transistor KA ir 119 e
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general


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    BUK104-50L/S BUK104-50LP/SP BUK104-50L BUK104-50S BUK1Q4-50L/S BUK104-50L/S k104 transistor NMOS Transistor KA ir 119 e PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


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    BUK200-50X PDF

    afke

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


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    BUK109-50GS hsi/hsl25 afke PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK110-50GS DESCRIPTION Monolithic temperature and overload protected power MOSF:ET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.


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    BUK110-50GS PDF

    BUK10G-50DL

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch tor automotive systems and other applications.


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    BUK100-50DL so/hso25 BUK10G-50DL PDF

    BUK109-50GL

    Abstract: EOSM
    Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other


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    BUK109-50GL BUK109-50GL OT404 EOSM PDF