TRANSISTOR AP 431 Search Results

Contextual Info: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BJE 42

Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability

transistor w 431

Contextual Info: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high

itt 2222

Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
Contextual Info: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

capacitor 1c8

Abstract: c17 dual mos transistor ai 757 BLF547 175B
Contextual Info: bbS3^31 0 0 3 0 1 bU BID M AP X Philips Semiconductors Product specification UHF push-pull power MOS transistor N BLF547 AMER P H IL IP S /D IS C R E T E b * iE ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

GS 78L05 N

Contextual Info: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures

25C945

Abstract: 2SC1815 NJM2252 NJM2252L TP10
Contextual Info: ON SCREEN DISPLAY MIX 1C NJM2252 N JM 2252 is the IC th a t h as been developed for VCR ap p licatio n , w hich has the super-im pose function as well as the function to drive the S-VH S, S-o u tp u t p in by pu ttin g the external transistor. N JM 2252 h a s Y signal p in a n d C signal pin o f each in d ep en d en t circuit in it. Y singal line is selectable o f 4 inputs, a n d C

79LOO

Abstract: NJM431U NJM79L00 NJU7211U NJU7212U transistor q7
Contextual Info: E JR C 3 3-TERM IN A L VOLTAGE REGULATOR 1.Protection Circuit 1 P ositive V o ltag e 3 -T erm inal R eg u lato r (F ig .l) (1-1) T herm al Sh u t D ow n C ircu it T h e therm al sh u t dow n circu it cuts o ff the output v o lta g e to drop dow n the tem perature to the safe level w hen the ju n c ­

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: MITSUBISHI <ANALOG ASSP> M 51995P ,FP S W ITC H IN G REGULATOR CONTROL DESCRIPTION PIN CONFIGURATION TOP VIEW M itsubishi 1C type M51995P.FP are the prim ary sw itching re gulator con troller w hich are esp e c ia lly d e sig ned to get the re gulate d DC voltage from AC pow er supply.

A5 kne mosfet

Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE MS1997P.FP S W ITC H IN G REGULATOR CONTROL DESCRIPTION M51997 is th e p rim a ry s w itc h in g re g u la to r c o n tro lle r w h ic h PIN CONFIGURATION TOP VIEW) is e s p e c ia lly designed to g e t th e re gulate d DC vo lta g e

m51996

Contextual Info: MITSUBISHI <ANALOG ASSP> M 51996P ,FP SW ITC HING REGULATOR CONTROL DESCRIPTION M itsubishi 1C type M51996P.FP are the prim ary sw itching PIN CONFIGURATION TOP VIEW regulator con troller w hich are esp e c ia lly d e sig ned to get the regulated DC voltage from AC pow er supply.

m51978

Abstract: M51978P M51978FP ba8v m5197b M51978P equivalent schematic diagram 12v ac regulator m51978 12T4 16P2N V120
Contextual Info: MITSUBISHI <ANALOG ASSP> M 51978P ,FP SW ITC H IN G REGULATOR CONTROL DESCRIPTION M itsubish 1C type M51978P, FP are prim ary sw iching re g ­ PIN CONFIGURATION TOP VIEW ulator con troller w hich are esp e c ia lly desig ned to g e t the re gulate d DC voltage from AC pow er supply.

BJE 148 capacitor

Abstract: A213 SOT122A BJE 147
Contextual Info: N AUER PHILIPS/DISCRETE bbSa'm b'JE D ÜD2Ô7T5 BLU10/12 UHF power transistor FEATURES • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. E OT • QUICK REFERENCE DATA

RF POWER TRANSISTOR NPN vhf

Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Contextual Info: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: Philips Semiconductors bb53T31 002*^ 16 HQS • APX Product specification HF/VHF power MOS transistor — BLF241 — N AflER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch

BLW10

Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Contextual Info: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE? M 51996P ,FP SW ITC H IN G REGULATOR CONTROL DESCRIPTION M51996 is th e prim ary s w itc h in g re gulato r c o n tro lle r w hich PIN CONFIGURATION TOP VIEW is e s p e c ia lly desig ned to g e t th e re gulate d DC vo lta g e

transistor j127

Contextual Info: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: Philips Semiconductors • Product specification bb53^31 DQ3D137 8^2 » A P X UHF push-pull power MOS transistor — BLF544B N AflER PHILIPS/5ISCRETE bTE D— PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

Contextual Info: LIN Doc #; 1431 WFMTY M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f P rogrammable R eference I n n o v a t i o n P r o d u c t i o n D ata DESCRIPTION T he LX1431 is a n adjustable sh u n t voltage regulator featuring 100mA sink capability, a

Contextual Info: O IlN flN fZ Y M T H I C I n f i n i t e k O E L E C T k O P o w e r o f N P I C S I n n o v a t i o n r o g r a m m a b l e P r o d u c t i o n eference D a t a DESCRIPTION T he LX1431 is a n adjustable sh u n t voltage regulator featuring 100mA sink capability, a

voltage regulator ana 618

Abstract: M51977P M51977P equivalent M51977 M51977FP photo transistor til 78 51977FP 51977P FLY BACK REGULATOR CIRCUIT diagram OF SMPS IN PC
Contextual Info: MITSUBISHI <ANALOG ASSP> M51977P,FP SW ITC H IN G REGULATOR CONTROL DESCRIPTION M itsubishi 1C type M51977P, FP are the off-line prim ary PIN CONFIGURATION TOP VIEW PWM con troller w hich are esp e c ia lly d e sig ned lor SMPS to g e t the re gulate d DC voltage from AC pow er supply.

BLW91

Abstract: 414 rf transistor blw91 transistor w884
Contextual Info: N AMER PHI L I P S/DISCRETE b^E D • ^ 53^31 I lb 3 iAPX BLW91 U.H.F. POWER T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u .h .f. and v .h .f. range fo r a nominal supply voltage of 28 V . The transistor is resistance stabilized and