Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR AZ 1 Search Results

    TRANSISTOR AZ 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AZ 1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TTL to vga

    Abstract: LVDS 30 pin to vga LVDS to vga TTL parallel to vga LVDS display 30 pin 30pin vga header Digital Displays SFD064VX1ADV PD050VX2 of 30 pin LVDS
    Text: 1.17.06 TECHNICAL BRIEF BY: AZD ENGINEERING TFT Digital Board Signals AZ Displays offers decoder boards suitable to display full motion video on its digital TFT panels. Digital displays are designed to interface to a digital-to-analog board via TTL transistor to transistor logic or LVDS (low voltage differential signal).


    Original     		PDF 30-pin 12-pin PD050VX2 SFD064VX1ADV/VGA/INVT TTL to vga LVDS 30 pin to vga LVDS to vga TTL parallel to vga LVDS display 30 pin 30pin vga header Digital Displays SFD064VX1ADV of 30 pin LVDS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 +0.1 6 ±0.2 PACKAGE Note 8-pin HVSON 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 4.1 ±0.2 μ PA2727UT1A-E2-AZ 1 0.2 1.0 MAX.


    Original     		PDF PA2727UT1A PA2727UT1A-E2-AZ PA2727UT1A-E1-AZ PA2727UT1A

    j152

    Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
    Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7

    mode 5 IFF

    Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1011-300 429-HVVi EG-01-DS02A EG-01-DS02A5 mode 5 IFF diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz

    L-Band 1200-1400 MHz

    Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
    Text: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1214-100 EG-01-DS06A 429-HVVi L-Band 1200-1400 MHz 4884 MOSFET radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		PDF HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


    Original     		PDF HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB

    Radar

    Abstract: diode gp 429 HV400 hvvi transistor 1150
    Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,


    Original     		PDF HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE Radar diode gp 429 HV400 hvvi transistor 1150

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS

    transistor s 1014

    Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
    Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346

    L-Band 1200-1400 MHz

    Abstract: diode gp 429 Radar x band radar HV400
    Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING IEC 134


    Original     		PDF V0405-175 21DD1E)

    500W TRANSISTOR

    Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
    Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-500L on/18us HVV1011-500L on/18 HV800 MIL-STD-883, 429-HVVi EG-01-PO17X7 500W TRANSISTOR 500W RF Transistor 1030 MHz

    HVV1011-1000L

    Abstract: transistor 1000W 1000w power supply 1030 PULSED
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED

    1030-1090MHz

    Abstract: 4884 SM200 DS01A
    Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


    Original     		PDF HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A

    HVVi Semiconductors

    Abstract: SM200
    Text: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications


    Original     		PDF HVV1214-025 1200-1400MHz, HVV1214-025 429-HVVi EG-01-DS05A HVVi Semiconductors SM200

    HVV1012-550

    Abstract: 4884 12W 01 TRANSISTOR hvvi
    Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed


    Original     		PDF HVV1012-550 HVV1012-550 429-HVVi EG-01-PO18X2 4884 12W 01 TRANSISTOR hvvi

    HVV0912-800

    Abstract: SEMICONDUCTORS INC
    Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV0912-800 HVV0912-800 429-HVVi EG-01-POXXX1 SEMICONDUCTORS INC

    HV400

    Abstract: 1030 mhz interrogator 1030 PULSED
    Text: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-075L on/18us HVV1011-075L on/18 429-HVVi EG-01-POXXX1 HV400 1030 mhz interrogator 1030 PULSED

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü


    OCR Scan     		PDF Q62702-C2529 OT-363

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES f ? QM200DY-24 j HIGH POWER SWITCHING USE ! IN S U L A T E D TYPE | QM200DY-24 • lc • Vc e x • hFE Collector c u rre n t. 200A Collector-em itter v o lta g e . 1200V DC current g a in . 75


    OCR Scan     		PDF QM200DY-24 QM200DY-24 E80276 E80271 i-25cc

    ML4408

    Abstract: No abstract text available
    Text: February 1991 ADVANCE INFORMATION ^ Micro Linear ML4408 Low Voltage Voice Coil Servo Driver GENERAL DESCRIPTION The ML4408 is a voice coil power driver intended for use in both High Performance 5V and 12V Hard Disk servo systems. The ML4408 contains all control


    OCR Scan     		PDF ML4408 ML4408 ML4408CS