TRANSISTOR B 886 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3c 31 0D23H3B l b 3 BLW91 X IAPX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

SOT-23

Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

GMBTA05

Contextual Info: G M B TA 0 5 1/2 NPN SILICON TRANSISTOR Description The GMBTA05 is Amplifier Transistor. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30

HMPS650

Abstract: audio transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures

HMPS751

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6317-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPS751 PNP SILICON TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMPSA05

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMPS6562

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6322-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS6562 PNP SILICON TRANSISTOR Description The HMPS6562 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures

HMPSA43

Abstract: 100MHZ HMPSA93
Contextual Info: HI-SINCERITY Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage

HMPS651

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6326-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS651 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

1902 transistor

Abstract: H2N6426
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

H2N6427

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

1902 transistor

Abstract: H2N5089
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3 H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HM27

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

BFQ 42 transistor

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES

HLB121I

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 1/3 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in

HM14

Abstract: HM64
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE5908-B Issued Date : 1998.04.09 Revised Date : 2000.10.01 Page No. : 1/3 HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain.

1902 transistor

Abstract: H2N3417
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

MPS3639

Abstract: transistor yr
Contextual Info: MPS3639 silicon PNP SILICON ANNULAR TRANSISTOR PNP SILICON SWITCHING TRANSISTOR . . designed for use in low-current, high-speed switching applications. Collector-Em itter Breakdown Voltage — B V c e S = 6 0 Vdc (Min) Fast Switching Tim e @ l c * 50 mAdc

8 pin ic lm 745

Contextual Info: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.

BLW91

Abstract: high power npn UHF transistor blw91 transistor
Contextual Info: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

hbf423

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No. : 1/3 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Absolute Maximum Ratings • Maximum Temperatures

GL5672

Contextual Info: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J

HE8051

Abstract: HE8551
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6113-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.