TRANSISTOR B A O 33 ST Search Results

BLY90

Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
Contextual Info: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

2C5660

Abstract: 2C5661 2C5662 2C5663
Contextual Info: b û S b n i QOOCHIS IPPC 2 Amp, 300V, Transistor T-33-OÌ FEATURES CHIP TYPE: AN • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 8 Mils Nominal

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

9915 transistor

Abstract: motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90
Contextual Info: MOTOROLA SC ÌXSTRS/R FJ AT DE |b 3L72 SM DD7flT71 5 890 78971 & 3 6 7 2 S 4 M O T O R O L A SC CXSTRS/R F T ' 33 ' 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 7 0 W (P E P ) — 3 0 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR

132/DD 127 D TRANSISTOR

Contextual Info: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

2N6794

Contextual Info: m 43D2E71 005377k. flfil • HAS 2N6794 33 HARRIS N-Channel Enhancem ent-M ode Power M O S Field-Effect Transistor August 1991 Package Features T 0 -2 0 5 A F • 1.5A, 500V B O T T O M VIEW • rD S o n = 3f2 • S O A is P o w e r-D issip a tio n Limited

1N4Z45

Abstract: T33 transistor
Contextual Info: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g

QS 100 NPN Transistor

Abstract: KSD5013 KSD5014 samsung tv C 3311 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC D | GOQ?bbfl 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T-33-11 CO LO R TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage V c b o = 1 5 0 0 V A b s o l u t e m a x i m u m r a t i n g s (Ta=25°c)

BUZ42

Contextual Info: B U Z42 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 4.0A, 500V TOP VIEW • rDS on = 2 .0 il • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics

Contextual Info: 33 ttftH E S S HM-8832 J a n u a ry 1992 32K x 8 Asynchronous CMOS Static RAM Module Features Description • Full CMOS Six Transistor Memory Cell T h e H M -88 3 2 is a 3 2 K x 8 B it A sy n c h ro n o u s C M O S S tatic R A M M o d u le b a se d on a m u ltila yere d , co-fired , d u a l-in -line

BLX92A

Abstract: feedthrough cap
Contextual Info: P H I L IP S I N T E R N A T I O N A L 41E D S3 711ÜÖSb 0057Ö37 G H P H I N BLX92A M A IN TE N A N C E TYPE r-33~0S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe

g4 ph 500 transistor

Abstract: BLX92A IEC134 362-0 transistor TRANSISTOR C 3619 BLX92
Contextual Info: N AMER J^HILIPS/DISCRETE 86D 018 12 ObE D • D T-33-ÒS bbSBTBl O Q m D S Ü J BLX92A U.H.F. PO W E R TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD ^D S o n • • • • • BUZ 11 AL = 50 V = 26 A = 0.055 Q N channel E nhancem ent mode Logic level A valanche-proof Package: T O -2 2 0 A B ') Type Ordering code BUZ 11 AL C 6 70 78-S 1 33 0-A 3 Maximum Ratings

NPN 600V transistor darlington

Contextual Info: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC. bì D e JJ ä 3 b ä b D E O O O i m i Olitran Devices, inc. NO.: S P E C I F I C A T I O N S T-33-29 BU323A NPN SILICON POWER TYPE: DARLINGTON TRANSISTOR M m UM-B A IIflSS, CASE: TO-3 475 V o l t a g e C o l l e c t o r t o E m i t t e r V c e r s u s j ,R b e = i o o G .

DM 0265 R pin EQUIVALENT

Abstract: MRF2005 724 motorola NPN Transistor
Contextual Info: lEE D I MOTOROLA fc.3L.72SM 0 0 0 0 0 4 0 MOTOROLA SC T-33-0? fi | XSTRS/R F SEMICONDUCTOR TECHNICAL DATA MRF2005M The RF Line S .O W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER TR A N S IS T O R . . . designed fo r Class B and C co m m o n b ase broadband am p lifie r

st 247

Contextual Info: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings

Contextual Info: SIEMENS SIPMOS Power MOS Transistor Vas lD ^ D S o n BUZ 70 = 60 V =12 A = 0.15 Q • N channel • E nhancem ent m ode • A valan che-p roo f • Package: T O -2 2 0 A B ’ ) Type Ordering code BUZ 70 C 6 70 78-S 1 33 4-A 2 Maximum Ratings Symbol Values

BUZ73A

Abstract: BUZ73
Contextual Info: BUZ73A 33 HARRIS N-Channel Enhancem ent-M ode Power Field-E ffect Transistor August 1991 Package Features T O -22 0 A B • 5.8A, 200V TOP VIEW • rDS on = ° - 6 fl • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics

BU428A

Abstract: ix 3368 BU428 BU426-BU426A BU426 BU-428 ic ix 3368
Contextual Info: MOTOROLA SC 1HE D I t3b?aS4 0004013 b | XSTRS/R F 7^ 33 '!$ MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE NPN SILICON TRANSISTOR 6 A M PERES . , . designed for use in the switched m ode power supply o f 9 0 ° and 1 1 0 ° colour television receivers.

BCW61DR

Contextual Info: plessey "ÏÏB s e m i c o n d /d i s c r e t e » F|7 SS05 33 DOOtitiBO = r ~T' PNP silicon planar small signal transistor BCW 61 A B S O L U T E M A X IM U M R A T IN G S Parameter Collector-Emitter Voltage Collector-Emitter Voltage Sym bol Emitter-Base Voltage

5609 transistor

Abstract: TSB125100
Contextual Info: 4SE D • b l l S I S G DD DD SS 7 Q5b ■ PTC niCROSEIlI C O R P / P O W E R 7 - 33 - / ^ TSB125100 Power Transistor Chip, NPN 25 A, 1000 V, tf= 50 ns ■ Planar Epitaxial ■ Contact Metallization: I Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils

transistor buz

Contextual Info: S IE M E N S SIPMOS Power MOS Transistor VDS /D ^ D S o n | • • • • • BUZ 70 L = 60 V = 12 A = 0.15 Q N channel Enhancem ent m ode Logic level A valanche-proof Package: T O -2 2 0 A B ' Type Ordering code BUZ 7 0 L C 6 7 0 78-S 1 33 4-A 3 Maximum Ratings