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    TRANSISTOR B1068 Search Results

    TRANSISTOR B1068 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SB1068-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B1068 Datasheets Context Search

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    150LA20A

    Abstract: 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A
    Text: EDAL INDUSTRIES, INC. 51 COMMERCE STREET * EAST HAVEN, CONNECTICUT 06512 * TELEPHONE 203 -467-2591 * FAX (203)-469-5928 Internet: http://www.eemonline.com/edal Email: edalind@aol.com FEATURES APPLICATIONS A wide protecting voltage range. Low leakage current in Preparatory State.


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    PDF B106-13 150LA20A 250LA20A transistor b1068 480LA80A B1064 180kd07 mov 680kd14 471KD07 mov 200LA20A 230LA40A