TRANSISTOR B25 Search Results

BLU45/12

Contextual Info: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

SILICON TRANSISTOR CORP

Contextual Info: ShE ]> SILICON TRANSISTOR CORP • B254022 □□00fl‘i2 20b « S T C SILICON TRANSISTOR CORPORATION ^ ^ Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.5 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

431202036640 choke

Abstract: 43120203664 431202036640 BLW83 BY206 philips carbon film resistor
Contextual Info: fe,RE » N AMER P H I L I P S / DI SC R ET E • bt.S3c131 □ □ S c1435 270 BLW83 I H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h .f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

Contextual Info: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial

TRANSISTOR SE 135

Contextual Info: m m tE X KS624540 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 HiQh-B&td Single Darlington Transistor Module 400 Amperes/600 Volts O U T L IN E DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are

Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

transistor L6

Abstract: BFQ43 CES10 BLW31 00B3-2
Contextual Info: bSE t> m ?iiD fisb □D t.an ? 43a • p h in BLW31 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage of 13,5 V , Because o f the high gain and excellent power

Contextual Info: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92S • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri =10kU, R ^IO kfl) • Complement to KSR1202 ABSOLUTE MAXIMUM RATINGS (TA<B25‘C)

B2515

Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
Contextual Info: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The

b25-12

Abstract: 2N5591 B25-12 transistor "Frequency Multipliers" 4 watt VHF MT-72 20W power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5591/B25-12 Silicon NPN power VHF transistor 2N55591/B25-12 is designed for use 12.6 volt power amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.

diode B25

Abstract: B25-28 B25 diode
Contextual Info: B25-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. .112x45° A C B E FEATURES: E ØC • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions

TDA4601

Abstract: BY295 BY258 TDA 4601 BY258/200 tda 2032 C2540 i c tda 4601 voltage TDA4601B 4601
Contextual Info: TDA4601 SWITCH-MODE POWER SUPPLY CONTROLLER . . . LOW START-UP CURRENT DIRECT CONTROL OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR OVERLOAD CHARACTERISTIC CURVE SIP9 Plastic Package ORDER CODE : TDA4601

B81121 X2 mkt

Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Contextual Info: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r

BFG92AW

Abstract: transistor marking P8
Contextual Info: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR

GL8901

Abstract: 4702 frequency to voltage converter BY258
Contextual Info: GL8901/GL8901S SWITCH-MODE POWER SUPPLY CONTROLLER Desicription The integrated circuit GL8901/S has been designed for driving, controlling, and protecting the switching transistor in switch mode power supply as well as for protecting the overall power supply unit.

log and antilog amplifier

Abstract: national linear brief 4 Vishay Ultronix Grand Junction CO Q81 sensistor Widlar anti-log 10E2 570X AN-30 C1995
Contextual Info: National Semiconductor Application Note 30 November 1969 One of the most predictable non-linear elements commonly available is the bipolar transistor The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above

B 773 transistor

Contextual Info: bbSBSSl 00E4774 'lib « A P X Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A N APIER PHILIPS/DISCRETE FEATURES b7E D PINNING PIN • High power gain DESCRIPTION • Good thermal stability 1 emitter • Gold metallization ensures

Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage

transistor 5bw

Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
Contextual Info: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

S790T

Abstract: transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790
Contextual Info: c TELEFUNKEN ELECTRONIC filC D • D 0 DSM 3 S 5 ■ ALGG S 790 T TKLitFtLDKlKtitNl electronic Creative Technologies _ r - * M j Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

r21 diode

Contextual Info: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®