TRANSISTOR B722 Search Results

TRANSISTOR B722 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR B722 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223
LDJ2H825M03FA062 Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers
AWB7227 Abstract: No abstract text available Text: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7227 AWB7227
Untitled Abstract: No abstract text available Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7225 AWB7225
LDJ2H825M03FA062 Abstract: AWB7225 AWB7225P8 Text: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7225 AWB7225 LDJ2H825M03FA062 AWB7225P8
AWB7223 Abstract: JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8 Text: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223 JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8
Untitled Abstract: No abstract text available Text: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223
Untitled Abstract: No abstract text available Text: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223
ETM1 Abstract: AWB7228 Text: AWB7228 2.62-2.69 GHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7228 AWB7228 ETM1
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7224 AWB7224
AWB7227 Abstract: No abstract text available Text: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7227 AWB7227
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7224 AWB7224
Untitled Abstract: No abstract text available Text: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7224 AWB7224
Untitled Abstract: No abstract text available Text: AWB7223 1.930 -1.995 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223

JS-001-2010 Abstract: No abstract text available Text: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7227 AWB7227 JS-001-2010
Untitled Abstract: No abstract text available Text: AWB7227 2.11-2.17 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7227 AWB7227
AWB7228P8 Abstract: K 2545 transistor Text: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7228 AWB7228 AWB7228P8 K 2545 transistor
Untitled Abstract: No abstract text available Text: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7227 AWB7227
MODULE TM1 Abstract: No abstract text available Text: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7223 AWB7223 MODULE TM1
LDJ2H825M03FA062 Abstract: No abstract text available Text: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7225 AWB7225 LDJ2H825M03FA062
Untitled Abstract: No abstract text available Text: AWB7228 2.545 - 2.69 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	PDF	AWB7228 AWB7228
transistor b722 Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034 Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	PDF
B861 transistor Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	PDF	J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

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TRANSISTOR B722 Search Results

TRANSISTOR B722 Result Highlights (5)

TRANSISTOR B722 Datasheets Context Search

Untitled

LDJ2H825M03FA062

AWB7227

Untitled

LDJ2H825M03FA062

AWB7223

Untitled

Untitled

ETM1

Untitled

AWB7227

Untitled

Untitled

Untitled

JS-001-2010

Untitled

AWB7228P8

Untitled

MODULE TM1

LDJ2H825M03FA062

Untitled

transistor b722

equivalent transistor TT 3034

B861 transistor