TRANSISTOR B722 Search Results

TRANSISTOR B722 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR B722 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor b722 Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034 Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
B861 transistor Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR	PDF
Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223	PDF
LDJ2H825M03FA062 Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062 DATE CODE MURATA Hybrid Couplers	PDF
AWB7227 Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227	PDF
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29.5 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225	PDF
LDJ2H825M03FA062 Abstract: AWB7225 AWB7225P8 Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062 AWB7225P8	PDF
AWB7223 Abstract: JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8 Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223 JESD22-C101D 9 class date sheet 2012 AWB7223RM52P8	PDF
Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223	PDF
Contextual Info: AWB7223 1.93 -1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223	PDF
ETM1 Abstract: AWB7228 Contextual Info: AWB7228 2.62-2.69 GHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7228 AWB7228 ETM1	PDF
Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7224 AWB7224	PDF
AWB7227 Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227	PDF

Contextual Info: AWB7224 728 - 768 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7224 AWB7224	PDF
Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223	PDF
AWB7228 Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7228 AWB7228	PDF
JS-001-2010 Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227 JS-001-2010	PDF
Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227	PDF
AWB7228P8 Abstract: K 2545 transistor Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7228 AWB7228 AWB7228P8 K 2545 transistor	PDF
Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227	PDF
MODULE TM1 Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7223 AWB7223 MODULE TM1	PDF
LDJ2H825M03FA062 Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Ampliier Module ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7225 AWB7225 LDJ2H825M03FA062	PDF
Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Eficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7228 AWB7228	PDF

TRANSISTOR B722 Search Results

TRANSISTOR B722 Result Highlights (5)

TRANSISTOR B722 Datasheets Context Search

transistor b722

equivalent transistor TT 3034

B861 transistor

LDJ2H825M03FA062

AWB7227

LDJ2H825M03FA062

AWB7223

ETM1

AWB7227

AWB7228

JS-001-2010

AWB7228P8

MODULE TM1

LDJ2H825M03FA062