TRANSISTOR BA 752 Search Results

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Helipot

Abstract: BECKMAN helipot
Contextual Info: Beckman’ Series7521M CM0S.12-BIT MULTIPLYING D/A CONVERTERS E f fe c t iv e d a te : October, 1977 Series 7521M are 12-bit m ultip lying D /A co n ve rte rs designed for m ilitary, aerospace and o th er ap p licatio ns d em an d ing high p e r­ fo rm an ce o ver en v iro n m e n tal extrem es of te m p era tu re, sh ock,

A57520

Abstract: Transistor 3A
Contextual Info: \ U SED O N ANGLÈ í tTHIRD ¡f S EC U R IT Y C lA S S 'N PROJECTION ' / REMOVE A l l ftURRS. SH A R P E D G E S O K H A S H X III9 Q DKG lO »E R EA D IN C O N JU N C T IO N W ITH B .S 308 D R A W IN G N U M K R g H Y .« O F 6 S U T : 3A/A57520 S IM IL A R TO JTEDE C T O -5 C A S E .

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

Contextual Info: Standard ICs 6-channel high current driver BA6256 The BA 6256 is a low voltage, high current driver w ith six circuits, and is desig ned fo r a p plicatio ns such as LEDs, relays, solenoids, and other driver devices w hich operate at low voltages. This driver is particularly ideal for direct

transistor BC 567

Abstract: f36 transistor ED-7 transistor BC 339
Contextual Info: AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

transistor BC 567

Abstract: transistor BC 568 5E55
Contextual Info: AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

P2624

Abstract: transistor d2624 ULN2003
Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLDS036A - D2624, DECEMBER 1 9 7 6 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output D OR N PACKAGE (TOP VIEW) High-Voltage Outputs. . , ,50 V

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

2N4300

Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc

2N458B

Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
Contextual Info: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,

Contextual Info: / T L lim TECHNOLOGY _ LTC1235 M icrop rocessor Supervisory C irc u it F€flTUR€S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals

cq 724 g diode

Abstract: dr 25 diode texas TL497 TL497A
Contextual Info: TL497AC, TL497AI, TL497AY SWITCHING VOLTAGE REGULATORS SLVS009C - JUNE 1976 - REVISED AUGUST 1995 TL497AC, TL497AI. . . D, N, OR PW PACKAGE TOP VIEW High Efficiency . . . 60% or Greater Output Current. . . 500 mA Input Current Limit Protection TTL-Compatible Inhibit

Contextual Info: V il ivv« PWR-SMP240 PWM Power Supply 1C 85-265 VAC Input Isolated, Regulated DC Output POWER INTEGRATIONS, INC. Product Highlights integrated Power Switch and CMOS Controller • • • O u tp u t p o w e r up to 4 0 W fro m re c tifie d 2 2 0 /2 4 0 V A C

TIP 122

Abstract: texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS TIP120 TIP121
Contextual Info: TEXAS I N S T R -COPTO} 8961726 TEXAS bS INSTR D e | flTblTEb □□3bflci4 E | ~ 62C 3 6 8 9 4 OPTO TIPI 20, TIPI 21, TIPI 22 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 Designed For Complementary use with TIP125, TIP126, T IP I27

LT 5247

Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
Contextual Info: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature

NPN transistor 2n2222 beta value

Abstract: 2n3838
Contextual Info: TYPE 2N3838 N -P -N , P-N-P D U A L SILICON TRANSISTOR B U L L E T I N NO. D L - S 6 7 7 5 0 1 , M A R C H 1 9 6 5 - R E V I S E D A P R I L 1967 DESIGNED FOR COM PLEM ENTARY MEDIUM-POW ER, HIGH-SPEED SWITCHING AN D GENERAL PURPOSE AM PLIFIER APPLICATIONS

BA6446FM

Abstract: BA6446FP
Contextual Info: Motor driver ICs 3-phase motor driver BA6446FP/BA6446FM The BA6446FP and BA6446FM are 3-phase, full-wave, pseudo-linear motor drivers suited for VCR capstan motors. The 1C has a torque ripple cancellation circuit to reduce wow and flutter, a forced brake circuit that allows abrupt

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage

Contextual Info: o n r m TECHNOLOGY LTC1235 M icroprocessor Supervisory C ircuit FCO TUR C S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals ■ Conditional Battery Backup Extends Battery Life

mc34060

Abstract: MC35060
Contextual Info: TEXAS IN ST R ^ ÌLIN /IN TFCJ SS DE*J f i T b l ? E 4 ^ 0 3 M S t ö “ L j ~ TEXAS INSTR <L IN / INTFC 55C 34560 T -5 8 -1 1 -3 1 LINEAR INTEGRATED CIRCUITS • TYPES MC35060, MC34060 PULSE-WIDTH-MODULATION CONTROL CIRCUITS D2714, MARCH 1983 J OR N DUAL-IN-LINE PACKAGE

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

2N3902

Contextual Info: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage