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    TRANSISTOR BC337-25 PNP Search Results

    TRANSISTOR BC337-25 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA013
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8606
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC337-25 PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


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    BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note PDF

    transistor BC327

    Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
    Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


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    BC327/328 BC337/BC338 BC327 BC328 transistor BC327 BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338 PDF

    Contextual Info: B C 327 SEMICONDUCTOR " TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement To Bc337 ABSOLUTE MAXIMUM RATINGS a t Tamb*25°C Symbol Rating C haracteristic Unit Collector-Emitter Voltage Vces -50 V Collector-Emitter Voltage


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    Bc337 -100uA -10mA 100mA -300mA -500mA -50mA -10mA PDF

    TRANSISTOR pnp BC328

    Abstract: BC327 BC328 BC337 pnp transistor
    Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage


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    BC327/328 BC337/BC338 BC327 BC328 -10mA, 00250S7 TRANSISTOR pnp BC328 BC327 BC328 BC337 pnp transistor PDF

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


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    BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor PDF

    Contextual Info: BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337â BC338 BC327 BC328 BC337 500mA, 300mA PDF

    TRANSISTOR BC327-40

    Abstract: bc327 TRANSISTOR
    Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC327/328 BC337/338 BC327 BC328 QW-R201-038 TRANSISTOR BC327-40 bc327 TRANSISTOR PDF

    bc338

    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC327 bc338 PDF

    bc337 fairchild

    Abstract: BC337 pnp transistor
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32ugh bc337 fairchild BC337 pnp transistor PDF

    BC307

    Abstract: 2001 PNP TO-92
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32Product BC32716TA BC307 2001 PNP TO-92 PDF

    Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038 PDF

    BC327

    Abstract: BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337
    Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC327/328 BC337/338 BC327 BC328 QW-R201-038 BC327 BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337 PDF

    BC307

    Abstract: BC338 BC327 BC328
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC307 BC338 BC327 BC328 PDF

    BC327

    Abstract: BC328
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC327 BC328 PDF

    BC337

    Abstract: BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads BC327
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads PDF

    BC337 pnp transistor

    Abstract: st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 PDF

    BC307

    Abstract: BC327 BC328 BC338 BC327 W 75
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC307 BC327 BC328 BC338 BC327 W 75 PDF

    BC327

    Abstract: BC307 BC328 BC338 BC337 pnp transistor
    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage


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    BC327/328 BC337/BC338 BC327 BC328 -10mA, BC328 BC327 BC307 BC338 BC337 pnp transistor PDF

    BC337 pnp transistor

    Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 PDF

    bc328c

    Abstract: lt 328
    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage


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    BC327/328 BC337/BC BC327 BC328 bc328c lt 328 PDF

    c33725 w 78

    Abstract: BC337 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817
    Contextual Info: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


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    BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 w 78 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817 PDF

    c33725

    Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
    Contextual Info: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips


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    BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W c33725 c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet PDF

    c33725

    Abstract: c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor
    Contextual Info: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


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    BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor PDF

    BC337 pnp transistor

    Abstract: TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54
    Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification,


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    BC337; BC337A; BC338 BC327, BC327A BC328. BC337 BC337A BC337 pnp transistor TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54 PDF