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    TRANSISTOR BC557C Search Results

    TRANSISTOR BC557C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC557C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC557

    Abstract: transistor BC557 base collector emitter transistor BC558 base collector emitter bc558 bc556 transistor bc558 features BC557 TRANSISTOR PNP Transistor BC557 BC548 or BC558B TRANSISTOR BC557 bc556
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF BC556/BC557/BC558 BC546/BC547/BC548 BC556 BC557 BC558 -100A, -100mA, -10mA BC557 transistor BC557 base collector emitter transistor BC558 base collector emitter bc558 bc556 transistor bc558 features BC557 TRANSISTOR PNP Transistor BC557 BC548 or BC558B TRANSISTOR BC557 bc556

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF BC556/BC557/BC558 BC546/BC547/BC548 BC556 BC557 BC558

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556,B BC557, A, B, C BC558, B TO—92 TRANSISTOR(PNP ) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage


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    PDF BC556ï BC557, BC558, BC556 BC557 BC558

    BC557

    Abstract: transistor BC557 base collector emitter BC558 bc558 transistor transistor BC558 base collector emitter BC556 transistor BC558 BC557 TRANSISTOR BC557C transistor bc557
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF BC556/BC557/BC558 BC546/BC547/BC548 BC556 BC557 BC558 -100A, -100mA, -10mA BC557 transistor BC557 base collector emitter BC558 bc558 transistor transistor BC558 base collector emitter BC556 transistor BC558 BC557 TRANSISTOR BC557C transistor bc557

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556, B BC557, A, B, C BC558, B TO-92 TRANSISTOR PNP 1. COLLECTOR FEATURES Power dissipation 0.625 W (Tamb=25℃) PCM: Collector current -0.1 A ICM: Collector-base voltage


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    PDF BC556, BC557, BC558, BC556 BC557 BC558 BC558 BC556 BC557

    Untitled

    Abstract: No abstract text available
    Text: BC556,B BC557,A,B,C BC558,B Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data


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    PDF BC556 BC557 BC558 150oC 625mW BC556 BC557 BC558

    BC556

    Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
    Text: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage


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    PDF BC556, BC557, BC558, BC556 BC557 BC558 270TYP 050TYP BC556 of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A

    BC557

    Abstract: bc558 bc556 BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 BC557 PNP TRANSISTOR TRANSISTOR BC558 bc556 equivalent
    Text: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings TA=25℃ C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous


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    PDF BC556, BC557, BC558, BC556 BC557 BC558 BC557 bc558 bc556 BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 BC557 PNP TRANSISTOR TRANSISTOR BC558 bc556 equivalent

    BC557

    Abstract: BC558 transistor bc557 bc556 BC557 data sheet BC557 TRANSISTOR BC558 pnp transistor TRANSISTOR BC558 transistor BC556b bc556b
    Text: BC556B/57ABC/58B BC556, B BC557, A, B, C BC558, B TRANSISTOR PNP TO-92 FEATURES Power dissipation 0.625 W (Tamb=25℃) PCM: Collector current -0.1 A ICM: Collector-base voltage BC556 -80 V VCBO: BC557 -50 V BC558 -30 V Operating and storage junction temperature range


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    PDF BC556B/57ABC/58B BC556, BC557, BC558, BC556 BC557 BC558 BC558 BC556 BC557 transistor bc557 BC557 data sheet BC557 TRANSISTOR BC558 pnp transistor TRANSISTOR BC558 transistor BC556b bc556b

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


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    PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    transistor BC557 base collector emitter

    Abstract: BC557
    Text: BC557 TECHNICAL SPECIFICATION PNP Planar Epitaxial Transistor TO-92 1.COLLECTOR 2.BASE 3. EMITTER DIM MIN MAX A 4.32 5.33 B 4.45 5.2 C 3.18 4.19 D 0.41 0.50 E 0.35 0.50 F 5q 5q G 1.14 1.40 H 1.14 1.53 K 12.70 - Absolute Maximun Ratings Ta=25oC Symbol - Ratings


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    PDF BC557 BC557 BC557A BC557B 100mA BC557C 100mA, 100MHz transistor BC557 base collector emitter

    BC557

    Abstract: BC558 bc556 transistor BC558 base collector emitter transistor BC558 bc557 to92 transistor BC557 base collector emitter BC557 PNP TRANSISTOR free BC557 BC558 PNP transistor
    Text: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead Pb -Free 2 BASE 1 1 EMITTER 2 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    PDF BC556, BC557, BC558, BC556 BC557 BC558 BC557 BC558 bc556 transistor BC558 base collector emitter transistor BC558 bc557 to92 transistor BC557 base collector emitter BC557 PNP TRANSISTOR free BC557 BC558 PNP transistor

    BC557

    Abstract: BC557 transistor BC556 BC558C
    Text: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" Lead Pb -Free TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    PDF BC556, BC557, BC558, BC556 BC557 BC558 BC557 BC557 transistor BC556 BC558C

    TRANSISTOR BC 560c

    Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560

    pin configuration pnp transistor BC557

    Abstract: bc557 pin configuration transistor BC557 pin configuration pnp transistor BC558 BC558B BC557A BC557C pin configuration transistor bc558 transistor IC 557B transistor BC558
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration


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    PDF BC556 BC557 BC558 625mW 150oC pin configuration pnp transistor BC557 pin configuration transistor BC557 pin configuration pnp transistor BC558 BC558B BC557A BC557C pin configuration transistor bc558 transistor IC 557B transistor BC558

    pin configuration pnp transistor BC558

    Abstract: pin configuration pnp transistor BC557 pin configuration transistor BC557 BC557C BC557A bc557 BC558B transistor BC556b pin configuration transistor bc558 transistor BC558
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration


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    PDF BC556 BC557 BC558 625mW 150oC pin configuration pnp transistor BC558 pin configuration pnp transistor BC557 pin configuration transistor BC557 BC557C BC557A BC558B transistor BC556b pin configuration transistor bc558 transistor BC558

    pin configuration pnp transistor BC558

    Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor


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    PDF BC556 BC557 BC558 625mW 150oC pin configuration pnp transistor BC558 BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A transistor BC556b BC557C polarity transistor c 557B

    bc557

    Abstract: 558B
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor


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    PDF BC556 BC557 BC558 625mW 150oC 558B

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


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    PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    NPN Transistor BC548B

    Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
    Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA


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    PDF BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


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    PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


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    PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


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    PDF BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC