Transistor BFw 92
Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94
Text: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings
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BFW92
D-74025
Transistor BFw 92
TRANSISTOR BFW 11
transistor bfw 88
BFw 94
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din 3141
Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings
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BFW92A
D-74025
din 3141
transistor bfw 88
bfw 92
bfw 96
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BFW92
Abstract: No abstract text available
Text: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration
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Q62702-F321
fl235b05
35bQ5
Q0b747Q
BFW92
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TRANSISTOR BFW 11
Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use
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053SbOS
Q62702-F365
a23SbQS
00DM73b
TRANSISTOR BFW 11
bfw 10 transistor
GPA 76
transistor 2sc 546
transistor bfw 83
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TRANSISTOR BFW 11
Abstract: BFW92 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92
Text: BFW92 NPN Silicon planar RF transistor BFW 92 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41867 fo r use as RF am plifiers up in to the GHz range, e.g. fo r broadband antenna amplifiers. T ype O rd e r n u m b e r BFW 92
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BFW92
BFW92
Q62702-F321
00K/W
TRANSISTOR BFW 11
Transistor BFw 92
bfw 10 transistor
transistor BFW 10
bfw 16 transistor
BFW 100 transistor
"RF Amplifiers"
Q62702-F321
BFW 92
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bfw 106 c
Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for
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fi235bQ5
Q0047ES
Q62702-F319
23SbOS
00Q4727
BFW16
bfw 106 c
Q62702-F319
transistor BFW 10
bfw16a
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BFW30
Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
Text: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals
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BFW30
BFW30
Q62702-F
bfw 10 transistor
bfw 30 transistor
transistor BFW 10
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TRANSISTOR b 772 p
Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for
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fi235bQS
Q62702-F319
C--12
23SbQS
Q0QM727
BFW16A
TRANSISTOR b 772 p
bfw 16 transistor
BFW 72
TRANSISTOR BFW 16
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transistor bfw 88
Abstract: TRANSISTOR BFW 11 f320 2X06 BFW30 Q62702-F320 siemens 230 97 o Transistor C G 774 6-1 BFW 61
Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIE NGE SEL LS CH AF BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 7 2 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers
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53SbOS
Q0Q47SÃ
Q62702-F320
transistor bfw 88
TRANSISTOR BFW 11
f320
2X06
BFW30
Q62702-F320
siemens 230 97 o
Transistor C G 774 6-1
BFW 61
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Untitled
Abstract: No abstract text available
Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers
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S35bOS
Q0Q47SÔ
Q62702-F320
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BFW93
Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Text: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,
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053SbOS
f-31-IS
Q62702-F365
Q00M73b
BFW93
BFW93
transistor bfw 88
transistor 2sc 546
BFW 72
Q62702-F365
BFW 60
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Transistor BFw 92
Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain
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596/0776A1
470pF
20x8x0
Transistor BFw 92
TRANSISTOR BFW 11
BFW92
bfw glass
bfw 10 transistor
BFw 92
NPN planar RF transistor
bfw 11
bfw 30 transistor
BFW 42 transistor
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BFW16A
Abstract: bfw16 transistor bfw16a BFW 16
Text: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V
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UTILI18
BFW16A
BFW16A
bfw16
transistor bfw16a
BFW 16
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BFW92
Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,
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6535bQ5
2N6621.
Q62702-F321
Q68000-A4669
temperatu077
QQG4733
BFW92
BFW92
TRANSISTOR BFW 11
SQP5
2N6621
349 2110
Q68000-A4669
6621
transistor bfw 90
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BFW16
Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Text: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of
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BFW16
Q62702-F319
TRANSISTOR BFW 16
bfw 10 transistor
BFW16A
application of transistor BFW 10
TRANSISTOR BFW 11
Q62702-F319
transistor bfw16a
t 326 Transistor
bfw 16 transistor
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TRANSISTOR BFW 11
Abstract: BFW93 C11B
Text: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)
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CB-146
BFW93
n430n
TRANSISTOR BFW 11
BFW93
C11B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz
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bb53T31
0D32142
BFW92A/02
BFW92A
BFW92
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BFW16A
Abstract: TRANSISTOR BFW 16 Q62702-F319
Text: N P IS I-S iliz iu m -P la n a r-H F -T ra n sisto r BFW 16A BFW 16 A ist ein epitaktischer NPN-Silizium -Planar-HF-Transistor im Gehäuse 5 C3 DIN 41873 T O -39 für allgemeine Verwendung bis in den GHz-Bereich z. B. für Treiber- und Endstufen von Kanal- und Bereichsantennenverstärkern bis Bereich V, sowie für Vertikalverstärker-Endstufen in Breitband-Oszillografen. Der Kollektor ist mit dem Gehäuse leitend
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Q62702-F319
BFW16A
TRANSISTOR BFW 16
Q62702-F319
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TRANSISTOR BFW 11
Abstract: din 867 BFw 92 BFW 100 transistor Q62702-F321 bfw92
Text: IM P IM -Siliziu m -P lan ar-H F -T ran sisto r B F W 92 BFW 92 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B 3 DIN 41 867 T-Bauform ähnlich T 0 -50 , für Verwendung als HF-Verstärker bis in den GHz-Bereich, z.B. für Breitbandantennenverstärker.
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T0-50)
Q62702-F321
400K/W
TRANSISTOR BFW 11
din 867
BFw 92
BFW 100 transistor
Q62702-F321
bfw92
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BFW92
Abstract: No abstract text available
Text: Temic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F am plifier up to G H z range. Features • High pow er gain • Low noise figure B FW 92 M arking: BFW 92 Plastic case TO 50 1= C ollector; 2= Em itter; 3= Base Absolute Maximum Ratings
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BFW92
ar-97
BFW92
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BFY90 PHILIPS
Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
Text: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)
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BFW92
BFY90
BFS17
X3A-BFW92
X3A-BFW92
711Dfl2b
RV-3-5-52/733
IEC134)
BFY90 PHILIPS
BFW92 sot23
IEC-134
BFS17
BFW92
BFY90
IEC134
philips bfw92
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TRANSISTOR BFW 16
Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
Text: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,
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6535bQ5
2N6621.
Q62702-F321
Q68000-A4669
QQG4733
BFW92
TRANSISTOR BFW 16
2N6621
siemens 800 169 O
TRANSISTOR BFW 11
BFw 92
transistor bfw 90
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Q62702-F320
Abstract: BFW 72
Text: N P IM -S iliz iu m -P la n a r-H F -T ra n sisto r B F W 30 BFW 30 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z.B. für Vertikal verstärker in Breitband-Oszillografen und für Breitband-Antennenverstärker. Die Anschlüsse
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Q62702-F320
Q62702-F320
BFW 72
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BFW30
Abstract: BFW 30
Text: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers
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BFW30
BFW30
BFW 30
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