BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
2JS41W
BFX89
Transistor BFX 90
BFX 514
Q62702-F296
Q 371 Transistor
2sc 684
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BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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BFX60
Q60206-X60
Transistor BFX 90
bfx 63
Q60206-X60
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Transistor BFX 41
Abstract: Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547
Text: B F X 55 N P N i-T ran sistor für V H F -E n d stu fe n in A ntennenverstärkern BFX 55 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 5 C 3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor BFX 55
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Q60206-X55
150mA
Transistor BFX 41
Transistor BFX 25
Q60206-X55
B63310-A3004-X025
B63310
Scans-0010547
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BFX89
Abstract: F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41
Text: NPIVI-Transistor fü r A n ten n en verstärker BFX 89 BFX 89 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allge meine Anwendungen bis in den GHz-Bereich geeignet, z.B. für Antennen- und Hochfre
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BFX89
Q62702â
F296
Q62702
Scans-0010548
transistor TO-72
Transistor BFX
Transistor BFX 41
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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BFX59
Abstract: transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59
Text: BFX59 NPN Transistor for low-power driver and output stages in antenna amplifiers BFX 59 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41 876 TO-72 . The leads are electrically insulated from the case. BFX 59 is suitable for use in low -pow er amplifier, driver and power stages at frequencies up to the UHF range.
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BFX59
Q60206-X59
BFX59
transistor BFX59
transistor BC 336
kbr 1000
Transistor BFX 59
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Transistor BFX 59
Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher
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Q60206-X
Transistor BFX 59
BFX59F
BFX59
kbr 1000
transistor BFX59
transistor w 04 59
Transistor BFX 4
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BFX62
Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.
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BFX62
Q60206-X
-C12e
BFX62
Transistor BFX 25
Transistor BFX 4
Transistor BFX
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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npntransistor
Abstract: BFX62
Text: BFX 62 Nicht für N euentw icklung N P N -Transisto r für regelbare V erstärker und O szillatorstufen bis 1 G H z B FX 62 ist ein NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A4 DIN 41 876 TO -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert.
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BFX62
Q60206-X62
npntransistor
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TRANSISTOR BO 346
Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Text: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz
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BFX89
BFX89
Q62702-F296
TRANSISTOR BO 346
case BFX89
Power Transisitor 100V 2A
Q62702-F296
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transistor BC 584
Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4
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bDT17fla
O-92F
to-02
melf-002.
transistor BC 584
TRANSISTOR BC 456
Transistor BC 585
transistor BC 583
D 92 02 78.P
BFW 10 fet
Transistor BFX 41
TRANSISTOR BC 416 b
BC583
transistor BC 548
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3004x
Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna
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BFX55
BFX55
Q60206-X55
50ff1A
3004x
antenna amplifiers
Transistor BFX 25
63310-A
Q60206-X55
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BF 331 TRANSISTORS
Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm
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BFX89
569-GS
BF 331 TRANSISTORS
transistor BC 331
transistor Bf 331
transistor BF 606
on TRANSISTOR BC 187
transistor marking p-6
BC 331 Transistor
marking code SJ transistors
bc238c
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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T8710
SD1238
2N5126
2N918
2N5642
BM100-28
MM1603
MRF633
SD1145
PT8717
PT8740
PT8811
replace for 2N918
PT9780
mrf245
THOMSON-CSF PRODUCTS
transistor pt4544
PT9788
PT8710
PT8828
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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