TRANSISTOR BI 237 Search Results
TRANSISTOR BI 237 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR BI 237 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: r z 7 S C S - T H O M S O N ^ 7# ¡MH Bi^ i[LiiS7[^©lMll0 i _ M J E 1 3 0 0 5 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec T0-220 plastic package |
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MJE13005 T0-220 | |
AF 238
Abstract: DIP18-P-300D 041G 8ch driver SOP18 TD62781 TD62781F TD62781AP TD62782AP Integrated circuit 12110
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TD62781AP/F/AF TD62782AP/F/AF TD62781AP TD62782AP DIP18-P-300D: TD62781F/AF TD62782F/AF TD62781AP/F/AF, AF 238 DIP18-P-300D 041G 8ch driver SOP18 TD62781 TD62781F TD62781AP TD62782AP Integrated circuit 12110 | |
5080/d 5072 transistorContextual Info: M60 Section 7 FREV1A1_11-2011 3/26/13 3:19 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals |
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TL-11; 5080/d 5072 transistor | |
transistor b 1238Contextual Info: M60 Section 7 FREV2:11-2011 11/20/11 2:47 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals |
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TL-11; transistor b 1238 | |
transistor IRF730
Abstract: IRF730
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71ST537 IRF730 156x156 30x24 20x16 MC-0072 transistor IRF730 | |
TRANSISTOR BI 187Contextual Info: M55 Sect 6 correx pgsm 10/15/06 1:27 PM Page 100 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals |
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TL-11; TRANSISTOR BI 187 | |
Contextual Info: r Z Z ^ 7# L 7 8 m oo S E R IE S S G S -T H O M S O N HO@lfS lHICT!®!D<Bi POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A • OUTPUT VOLTAGES OF 5; 6 ; 8 ; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION |
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L78M00 O-220, ISOWATT220, OT-82, OT-194 | |
Contextual Info: 7 =3E T E 37 G D M b BI S TTb • S G T H SCS-THOMSON RÆ 0Mq [I[UOT 2)«S STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N40 STP4N40FI ■ . ■ ■ ■ V dss Ros(on) Id 400 V 400 V < 2.1 Ü < 2.1 Î2 4 A 3 A TYPICAL R d s (oi-i) = 1.65 Q |
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STP4N40 STP4N40FI 400VDS 400VOS STP4N40/FI | |
Contextual Info: S G S - T H O M S O N R ïinsœ iiLieî^ûinsi BUF410A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY • VERY HIGH SWITCHING SPEED . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . LOW BASE-DRIVE REQUIREMENTS |
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BUF410A BUF410A O-218 OT-93) | |
BUV41Contextual Info: • 7^53537 0056751 7 ■ S C ô « ^ S - T o H m O M [ l O T S O "T-33r^3t._ N ( s [ * S B S G S-THOMSON F A S T U V 4 1 30E T> S W IT C H IN G P O W E R T R A N S IS T O R ■ FAST SW ITCHING TIM ES . LOW SWITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND |
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T-33r BUV41 | |
NPN DARLINGTON POWER MODULE
Abstract: SGS50DA SGS50DA080D SGS50D
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DD30b7S O-240) PC-029« NPN DARLINGTON POWER MODULE SGS50DA SGS50DA080D SGS50D | |
sumida inverter IVContextual Info: 19-1327; Rev 0; 12/97 eV^ ^ V M ilX I A I DAC-Controlled Boost/Inverter LCD Bi as Su p p l y w i t h I n t e r n a l S w i t c h T The MAX686 DAC-controlled boost/inverter IC converts a positive input voltage to a positive or negative LCD bias voltage up to +27.5V or -27.5V. The device features |
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500mA, 16-Pin 300kHz MAX686 abl344 sumida inverter IV | |
0530L
Abstract: R250M
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MAX686 16-pin 0530L R250M | |
buv62Contextual Info: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND |
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TRANSISTOR BC 208
Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
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lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 | |
MZ2L-50R
Abstract: Le77D112TC ECS-TOJY475R CMC-300 Le77D11 GMC31X7R104K200NT ZETEX RF BAV99TA C0603C273K5RAC ECJ-1VB1H102K
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Le77D11 Le78D11 Le77D112TC 44-pin MZ2L-50R Le77D112TC ECS-TOJY475R CMC-300 Le77D11 GMC31X7R104K200NT ZETEX RF BAV99TA C0603C273K5RAC ECJ-1VB1H102K | |
Le77d112btc
Abstract: Le77D112TC DIODE-4148 le77d11 buck-boost chopper diode t 4148 LE78D11 TIP 41 transistor BAV99TA FZT955
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Le77D11 VE770 Le78D11 Le77D112TC 44-pin Le77D112BTC 2002/95/EC Le77D11 Le77d112btc Le77D112TC DIODE-4148 buck-boost chopper diode t 4148 TIP 41 transistor BAV99TA FZT955 | |
ESM2012DVContextual Info: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE |
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ESM2012DF ESM2012DV ESM2012DV ESM2012DF T-91-20 O-240) PC-029« | |
MZ2L-50R
Abstract: Le77D112TC transistor tip 109
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Le77D11 Le78D11 Le77D112TC 44-pin Le77D11 MZ2L-50R transistor tip 109 | |
LE77D112BTC
Abstract: Ve770 LE78D11
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Le77D11 VE770 LE77D112BTC LE78D11 | |
Le77d112btcContextual Info: Le77D11 A Voice Solution Voice Over Subscriber Line Interface Circuit VE770 Series APPLICATIONS Short/Medium Loop: approximately 2000 ft. of 26 AWG, and 5 REN loads Voice over IP/DSL – Integrated Access Devices, Smart Residential Gateways, Home Gateway/Router |
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Le77D11 VE770 Le78D11 Le77D112TC Le77D112BTC 44-pin 2002/95/EC Le77ry | |
Le77D11
Abstract: Le78D11 Chip Set Users Guide diode 4148 BAV99TA FZT955 GR-909 JESD22 philips cfl internal circuit ptc 820 UPW1
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Le77D11 VE770 Le78D11 Le77D112TC 44-pin Le77D112BTC 2002/95/EC Le77D11 Le78D11 Chip Set Users Guide diode 4148 BAV99TA FZT955 GR-909 JESD22 philips cfl internal circuit ptc 820 UPW1 | |
Le77D112TC
Abstract: MZ2L-50R DIODE 4148 BAV99TA FZT953 FZT955 GR-909 TRANSISTOR FZT953
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Le77D11 Le77D112TC 44-pin Le77D112TC MZ2L-50R DIODE 4148 BAV99TA FZT953 FZT955 GR-909 TRANSISTOR FZT953 | |
Contextual Info: 7^2 ^ 3 7 £ ÿ j oosa?^ g • " T ;3 3 - S S G S - T H O M S O N BU V62A D O æ ilL i ¥ ^(s lD © i S G S-THOMSON 3GE » FAST SWITCHING POWER TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES LOW BASE CURRENT REQUIREMENTS VERY LOW SATURATION VOLTAGE AND |
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BUV62A |