TRANSISTOR BI 240 Search Results
TRANSISTOR BI 240 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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| TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR BI 240 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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shd4304Contextual Info: SENSITRON SEMICONDUCTOR SHD430204 TECHNICAL DATA DATA SHEET 1079, REV. Formerly part number SHD4304 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol |
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SHD4304 SHD430204 2N6193 shd4304 | |
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Contextual Info: SENSITRON SEMICONDUCTOR SHD419204 TECHNICAL DATA DATA SHEET 1078, REV A. Formerly part number SHD4194 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol |
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SHD4194 SHD419204 2N6193 | |
SHD4264Contextual Info: SENSITRON SEMICONDUCTOR SHD426204 TECHNICAL DATA DATA SHEET 1092, REV. A Formerly part number SHD4264 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 Absolute Maximum Ratings* Symbol Parameter VCEO Collector-Emitter Voltage |
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SHD4264 SHD426204 2N6193 SHD4264 | |
T1200
Abstract: D-68623 t1200ta25a westcode igbt
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T1200TA25A TX033TA25A) T1200TA25A T1200 D-68623 westcode igbt | |
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Contextual Info: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* |
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SHD4184/A/B SHD418204/A/B 2N6193 | |
T2400GBContextual Info: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 |
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T2400GB45E T2400GB45E T2400GB | |
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Contextual Info: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP 8CH High Voltage Source Driver Product Description: These products are comprised of eight source current Transistor Arrays. These drivers are specifacally designed for flourescent |
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TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP DIP18-P-300D: TD62783F/AF TD62784F/AF 500mA 400mA DIP-18pin | |
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Contextual Info: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 |
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T2400GB45E T2400GB45E | |
T1200EB45EContextual Info: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate |
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T1200EB45E T1200EB45E | |
T2400GA45E
Abstract: T2400 D-68623
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T2400GA45E T2400GA45E T2400 D-68623 | |
T1200EB
Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
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T1200EB45E T1200EB45E T1200EB LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A | |
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Contextual Info: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate |
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T2400GB45E T2400GB45E | |
IC500A
Abstract: t0800ta45e D-68623 T0800 transistor D 982
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T0800TA45E T0800TA45E IC500A D-68623 T0800 transistor D 982 | |
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Contextual Info: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description |
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DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 47-63Hz) | |
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Contextual Info: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description |
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DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 Min0/60Hz) | |
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Contextual Info: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description |
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DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 | |
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Contextual Info: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. |
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T0360NB25A T0360NB25A | |
DC60S3
Abstract: DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 E116950
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E116950) DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 E116950 DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 E116950 | |
T0360NB25A
Abstract: igbt1 T0360NB T0360
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T0360NB25A T0360NB25A igbt1 T0360NB T0360 | |
T1200TB
Abstract: transistor 7830 diode current 1200A
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T1200TB25A T1200TB25A T1200TB transistor 7830 diode current 1200A | |
T0850VBContextual Info: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. |
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T0850VB25E T0850VB25E T0850VB | |
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Contextual Info: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. |
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T1200TB25A T1200TB25A | |
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Contextual Info: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. |
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T0850VB25E T0850VB25E | |
T2400GA45E
Abstract: MJ6000 T2400
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T2400GA45E VCES/100 T2400GA45E MJ6000 T2400 | |