TRANSISTOR BI 370 Search Results

4023 IC

Abstract: world transistor equivalent and data
Contextual Info: SHD418309 SHD418309A SHD418309B SENSITRON SEMICONDUCTOR PRELIMINARY DATA SHEET DATA SHEET 4023, REV.- NPN BI-POLAR POWER TRANSISTOR ƒ ƒ ƒ Hermetic, Ceramic Package Electrically equivalent to 2N3442 Surface Mount Package Absolute Maximum Ratings* Symbol

Contextual Info: SHD418302 SHD418302A SHD418302B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4024, REV.Formerly part number SHD4182/A/B NPN BI-POLAR DARLINGTON POWER TRANSISTOR • • • Hermetic, Ceramic Package Electrically equivalent to 2N6301 Surface Mount Package

Contextual Info: SENSITRON SEMICONDUCTOR SHD418301/A/B TECHNICAL DATA DATA SHEET 940, REV. - PNP BI-POLAR POWER TRANSISTOR • Hermetic Package • Electrically Equivalent to 2N3421 • Surface Mount Package Absolute Maximum Ratings* Symbol Parameter VCEO Collector-Emitter Voltage

TX033

Abstract: westcode igbt
Contextual Info: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

Contextual Info: SENSITRON SEMICONDUCTOR SHD418203/A/B TECHNICAL DATA DATA SHEET 941, REV. A Formerly part number SHD4183/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings*

Contextual Info: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings*

T0258HF65G

Contextual Info: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

transistor 2028

Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353
Contextual Info: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter

TRANSISTOR MARKING 3D 6PIN

Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30
Contextual Info: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.

m02 marking transistor

Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin
Contextual Info: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low

MAX749CPA

Contextual Info: 19-0143: Rev 1:2/9 5 > i/ iy j x i> k i D i g i t a l l y A d j u s t a b l e LCD Bi as S u p p l y _G e n e r a l D e s c r i p t i o n ♦ +2.0V to +6.0V Input Voltage Range A unique current-lim ited control schem e reduces supply current and maximizes efficiency, while a high switching

i580p

Contextual Info: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS

TIPL773A

Abstract: TIPL773B TRANSISTOR tipl773A TIPL773 NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor
Contextual Info: TE XA S I N S T R -COPTO} 8961726 bE TEXAS IN S T R Î FJ flTbl7 ab Q 0 3 7 D 77 fi 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature

TIPL773

Abstract: B 773 transistor TIPL773A
Contextual Info: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature

bi 370 transistor e

Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7
Contextual Info: 3 875081 6 E SOLI D STATE 01 DE | 3 ö 7 S 0 f l l DDITID? □ | D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where

bi 370 transistor

Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
Contextual Info: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

bi 370 transistor

Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
Contextual Info: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.

1671B

Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Contextual Info: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point

semiconductors bi 370

Abstract: WD 969
Contextual Info: philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage

bi 370 transistor e

Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
Contextual Info: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED

0DG02

Contextual Info: 45E D ISOCO n C O M P O N E N T S LTD • HôôbSlO G0002S0 7 « I S O ~ V/-53 CNX 82AX .■ r» n ,|,i,.,„ j,j,- |.l lf. ,v v, r Æ tiliÆ .M», j- f e - 'f t m-Til1 H Heii'iid>' s'!'j a jl i òn i »/ ì ^ A r » ;ì in, I iv"-’- i k : ' ' y * } : * - Ì ■ »

24v ballast

Abstract: marking 18T TR marking 18t RV3135B5X
Contextual Info: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich

transistor a 1941

Abstract: 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator
Contextual Info: HIGH ISOLATION VOLTAGE PS2801-1-Y/NL SOP OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1-Y/NL is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for high density