TRANSISTOR BO 352 Search Results

Contextual Info: "BIG IDEAS IN BIS POWER |A MR PowerTecn lO O A M P E R E S PT*3520 ULTRA FAST SW ITCHING SILICON NPN TRANSISTOR ABSOLUTE M A X IM U M RATINGS SYM BO L PT-3520 Collector-Base Voltage vceo 300V C ollector-Em itter Voltage VCEO 200V E m itter Base Voltage VEBO

Contextual Info: UNITE» MICROELECTRONICS 30E D T 3 2 5 A 5 E DDOOSSO 1 • ' T ~ ri ri~l 3 U M 3522G Simple Piano Electronic Keyboard 1C Features .■ ■ ■ ■ * 3V to 4.5V operating voltage range Low power consumption Built-in oscillator, no external components needed.

ic UM3561

Abstract: Siren Sound Generator keyboard ic K13 transistor UM3561 transistor k7 Siren Sound Generator um3561 UM3522GH UM3522G Siren Sound Generator 4 sound UM3561
Contextual Info: UNITED MICROELECTRONICS U M 3522G 30E D T32SÛSH DD005SP 1 • Simple Piano Electronic Keyboard 1C Features .■ ■ ■ ■ * ' T ~ CìrM 3 Pin Configuration 3V to 4.5V operating voltage range Low power consumption Built-in oscillator, no external components needed.

TRANSISTOR BO 352

Abstract: BUL510
Contextual Info: SGS-THOMSON iiueraoowgi *7/ BUL510 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS i VERY HIGH SWITCHING SPEED:

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

k2915

Contextual Info: 2SK2915 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 15 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance

Contextual Info: T O SH IB A 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 53 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

MMBA811C6

Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
Contextual Info: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja

hall effect transistor 502a

Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Contextual Info: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera­ ture behavior of the magnetic switching points, and the mode of switching.

Contextual Info: h ~7 > y $ /T ransistors 9Q D 9 1I 1I O w l # Ä » 2SD2118F5 W Epitaxial Planar NPN Silicon Transistor 1 ¿ J § 5 M 2 ji£ lIÍf f l/L o w Freq. Power Amp. 7s h P / f 7 7 7 V j-ffl/S tro b o Flash. b • y l-îe 'T 'ifiü / Dimensions Unit : mm 1 ) VcE(sat)

PNPN

Abstract: TRansistor A 940 OCS31
Contextual Info: OKI electronic com ponents OCS31 Optical PNPN Switches GENERAL DESCRIPTION The OCS31 is an optical switch formed by combining a GaAs infrared light emitting diode and a silicon PNPN element that can withstand high voltages. Encased in an 8-pin plastic package, the

BUK202-S0Y

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8000S 5V VOLTAGE REGULATOR WITH WATCHDOG TIMER The TA8000S is an 1C specially designed for autom otive microcomputer systems. It produces an o u tput voltage of 5 +0.25V w ith o u t need for adjustment from its accurate

Contextual Info: Ordering number: EN3526 FBET Hybrid tC VPA10 No. 3 5 2 8 i Video Pack, Video Output Amplifier SAW O r for High-resolution CRT Displays i "V OVERVIEW PINOUT The VPA10 is ideally suited to medium-resolution mon­ itors which use a 64 kHz line frequency. Applications

Contextual Info: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM ­ J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

61089b

Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
Contextual Info: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current

Contextual Info: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

Contextual Info: T O SH IB A 2SK2915 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2915 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2SC793

Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

VPA05

Contextual Info: I Ordering number: EN3S26 FBET Hybrid 1C VPM04 Video Pack, Three-channel, RGB Video Output Amplifier for Medium-resolution CRT Displays No. 3526 SA%YO F i / / / .f •j OVERVIEW 4 X . ,.:s ' :v ".vt-Äs. It "X > ' PINOUT The VPM04 is a composite, three-channel, video output

POWER SUPPLY BTS SIEMENS

Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
Contextual Info: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58

LT 0220 diode

Contextual Info: TOSHIBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2S K29 53 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance