TRANSISTOR BO 47 Search Results

TRANSISTOR BO 47 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BO 47 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm 1 2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for	Original	PDF	2SC4543
K 4017 Abstract: aa2c transistor 4017 K 3505 transistor Transistor Bo 17 Datasheet Text: DIMENSIONS REF. mm mils MIN. TYP. MAX. MIN. TYP. A 0.890 1.120 35.05 44.12 A1 0.010 0.100 0.39 3.94 A2 0.880 1.020 34.65 b 0.300 0.500 11.81 19.69 C 0.080 0.200 3.15 7.88 D 2.800 3.040 110.2 114.17 119.72 E 2.100 2.64 82.70 E1 1.200 1.400 47.26 0.950 2.900	Original	PDF	OT23-3L 575in) 098in) OT23-3L K 4017 aa2c transistor 4017 K 3505 transistor Transistor Bo 17 Datasheet
BF398 Abstract: No abstract text available Text: BF398 PNP SILICON TRANSISTOR TO-92F 3F398 is PNP silicon transistor designed for high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VC BO 150V Collector-Emitter Voltage VCEO 150V Emitter-Base Voltage VE 80 6V Total Power Dissipation	OCR Scan	PDF	BF398 O-92F 3F398 625mW 100mA BF398
Untitled Abstract: No abstract text available Text: KSD5078 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode TO -3P F • High C ollector-Base Voltage (VC Bo=1500V) • High Speed Sw itching (tF=0.1jis) ABSOLUTE MIXIMUM RATING Rating Unit C ollector Base Voltage	OCR Scan	PDF	KSD5078
IRGPC46 Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate	OCR Scan	PDF	O-247AC IRGPC46 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó	OCR Scan	PDF	QM200HC-M VCO200V
zq 405-MF Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070 Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070
300V transistor npn 2a Abstract: No abstract text available Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fa st sw itc h in g * G uaranteed h FE specified up to 2 A m p s * L o w collector-em itter saturation v o lta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L	OCR Scan	PDF	T0126 300ns. 300V transistor npn 2a
BF298 Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
transistor Bc 540 Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635 Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
transistor bc 488 Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
transistor npn d 2058 Abstract: 2PD601A Text: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION	OCR Scan	PDF	bb53T31 002b055 2PD601; 2PD601A 2PB709 2PB709A 2PD601Q: 2PD601R: 2PD601S: 2PD601AQ: transistor npn d 2058 2PD601A
Untitled Abstract: No abstract text available Text: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	475-500B BUK445-500A
bc337 transistor Abstract: transistor bc337 ATC100A2R2 ATC100a101 Text: MOTOROLA SC XSTRS/R F 1Z E D \| ¿,31,725*4 Q0âfl3tfe, S \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV6080B The RF Line UHF Linear Pow er Transistor 80 W — 470 to 860 M H z UHF LIN E A R PO W ER T R A N SIS T O R . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal match	OCR Scan	PDF	TPV6080B BC337 1N4007 apacitor22 ATC100A101JP50 bc337 transistor transistor bc337 ATC100A2R2 ATC100a101

A020 Abstract: 3007A-DIP18 DIP18 LA2230 LC7074 LC7074M transistor Comparison Tables MFP10 LA2231 Text: Ordering num ber : EN4789 CMOS LSI LC7074, 7074M N o .4789 SANYO Synchronous Error Correction LSI for RDS Applications Overview Package Dimensions The LC7074 and the LC7074M are ICs for the RDS radio d a ta sy ste m im p le m e n te d by th e E B U (E u ro p e a n	OCR Scan	PDF	EN4789 LC7074, 7074M LC7074 LC7074M LA2230 LC7074/M A020 3007A-DIP18 DIP18 transistor Comparison Tables MFP10 LA2231
Transistor Bo 47 Abstract: P07 MARKING 3 PIN Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ET FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ti each 3 • Simplification of circuit design — • Reduces number of components and board space. APPLICATIONS	OCR Scan	PDF	PDTA144ET POTC144ET. Transistor Bo 47 P07 MARKING 3 PIN
transistor bc 577 Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575 Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2	OCR Scan	PDF	47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
MARKING CODE Zi sot363 Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration	OCR Scan	PDF	Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
108w Abstract: Q62702-C2275 Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C	OCR Scan	PDF	47ki2) Q62702-C2275 OT-323 300ns; 108w Q62702-C2275
transistor 7g Abstract: Q62702-C2263 Text: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23	OCR Scan	PDF	Q62702-C2263 OT-23 300ns; transistor 7g Q62702-C2263
Untitled Abstract: No abstract text available Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W	OCR Scan	PDF	10kii, 47kii) Q62702-C2280 OT-323 300ns;
BCR198 Abstract: KTY 120 Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C	OCR Scan	PDF	47kil) Q62702-C2266 OT-23 BCR198 KTY 120
Untitled Abstract: No abstract text available Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package • Built in bias resistor (R i=4 7kiî, R2=47ki!) WRs Q62702-C2419 O ro 1=E1 2=B1	OCR Scan	PDF	Q62702-C2419 OT-363 0235bD5 0120fl4b
BCR 150 V- 12 Abstract: No abstract text available Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface Circuit, driver circuit • Built in bias resistor R1=47kS2, R2=22kiì Ordering Code BCR 146W UPON INQUIRY Pin Configuration Package ro u m Marking WLs CÛ II Type	OCR Scan	PDF	47kS2, OT-323 BCR 150 V- 12

TRANSISTOR BO 47 Search Results

TRANSISTOR BO 47 Result Highlights (5)

TRANSISTOR BO 47 Datasheets Context Search

Untitled

K 4017

BF398

Untitled

IRGPC46

Untitled

zq 405-MF

300V transistor npn 2a

BF298

transistor Bc 540

transistor bc 488

transistor npn d 2058

Untitled

bc337 transistor

A020

Transistor Bo 47

transistor bc 577

MARKING CODE Zi sot363

108w

transistor 7g

Untitled

BCR198

Untitled

BCR 150 V- 12