TRANSISTOR BO 47 Search Results

BF398

Contextual Info: BF398 PNP SILICON TRANSISTOR TO-92F 3F398 is PNP silicon transistor designed for high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VC BO 150V Collector-Emitter Voltage VCEO 150V Emitter-Base Voltage VE 80 6V Total Power Dissipation

Contextual Info: KSD5078 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode TO -3P F • High C ollector-Base Voltage (VC Bo=1500V) • High Speed Sw itching (tF=0.1jis) ABSOLUTE MIXIMUM RATING Rating Unit C ollector Base Voltage

IRGPC46

Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Contextual Info: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

300V transistor npn 2a

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fa st sw itc h in g * G uaranteed h FE specified up to 2 A m p s * L o w collector-em itter saturation v o lta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L

BF298

Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

transistor Bc 540

Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

transistor bc 488

Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Contextual Info: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

transistor npn d 2058

Abstract: 2PD601A
Contextual Info: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION

Contextual Info: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

bc337 transistor

Abstract: transistor bc337 ATC100A2R2 ATC100a101
Contextual Info: MOTOROLA SC XSTRS/R F 1Z E D | ¿,31,725*4 Q0âfl3tfe, S | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV6080B The RF Line UHF Linear Pow er Transistor 80 W — 470 to 860 M H z UHF LIN E A R PO W ER T R A N SIS T O R . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal match­

Contextual Info: T O SH IB A TD62M4700F TO SHIBA BIPOLAR D IGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M470QF EXCELLENT LOW SATURATION H-BRIDGE DRIVER TD62M 4700F is low voltage use Multi Chip H-Bridge Driver 1C incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode. This 1C is

Transistor Bo 47

Abstract: P07 MARKING 3 PIN
Contextual Info: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ET FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ti each 3 • Simplification of circuit design — • Reduces number of components and board space. APPLICATIONS

K 4017

Abstract: aa2c transistor 4017 K 3505 transistor Transistor Bo 17 Datasheet
Contextual Info: DIMENSIONS REF. mm mils MIN. TYP. MAX. MIN. TYP. A 0.890 1.120 35.05 44.12 A1 0.010 0.100 0.39 3.94 A2 0.880 1.020 34.65 b 0.300 0.500 11.81 19.69 C 0.080 0.200 3.15 7.88 D 2.800 3.040 110.2 114.17 119.72 E 2.100 2.64 82.70 E1 1.200 1.400 47.26 0.950 2.900

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

108w

Abstract: Q62702-C2275
Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C

transistor 7g

Abstract: Q62702-C2263
Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

BCR198

Abstract: KTY 120
Contextual Info: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C

Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package • Built in bias resistor (R i=4 7kiî, R2=47ki!) WRs Q62702-C2419 O ro 1=E1 2=B1

BCR 150 V- 12

Contextual Info: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface Circuit, driver circuit • Built in bias resistor R1=47kS2, R2=22kiì Ordering Code BCR 146W UPON INQUIRY Pin Configuration Package ro u m Marking WLs CÛ II Type