TRANSISTOR BQ Search Results

Contextual Info: BQ S92 J \_ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant enve ope, intended fo r use in relay, high-speed and line-transformer drivers, and as a line current interruptor n telephony

Contextual Info: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

2PB601A

Abstract: 2PB601
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PB709A PNP general purpose transistor Product specification Supersedes data of 1997 Jun 19 1999 Apr 23 Philips Semiconductors Product specification PNP general purpose transistor 2PB709A FEATURES PINNING

transistor marking PB

Abstract: Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4081W FEATURES z Excellent hFE linearity. z Complements the 2A1576A Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.

transistor bq

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412

marking BQ sot-23

Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412

Transistor marking BQ

Abstract: marking BQ BQ MARKING transistor BQ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03

Contextual Info: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,

Transistor marking BQ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2PD601A

Contextual Info: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59

marking IAM transistor sot-23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB1218A-RT1 PNP Silicon General Purpose A m plifier Transistor Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package

BF422

Abstract: BF423
Contextual Info: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C

2N7002

Abstract: MMBT4403 a80 marking code 2N7002-00 2N7002 sot363
Contextual Info: SPICE MODEL: CTA2P1N CTA2P1N COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P SOT-363 Lead Free/RoHS Compliant Note 1

Contextual Info: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N

transistor bq 17

Contextual Info: Philips Semiconductors Product specification NPN video transistor BFQ221 APPLICATIONS • Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION PIN i DESCRIPTION 1 base 2 collector 3 emitter f i\.! î f y NPN silicon transistor encapsulated

Contextual Info: UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C

CBC 557 C

Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Contextual Info: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB

A03 transistor

Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363

BSS84

Abstract: J-STD-020A MMBT4401 A03 transistor
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363 A Mechanical Data

a80 marking code

Abstract: A80G part marking id
Contextual Info: CTA2P1N COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2P1N NEW PRODUCT Features • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Also Available in Lead Free Version · · · SOT-363

Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363

philips 22 ah 590

Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.