TRANSISTOR BR 8550 Search Results

Contextual Info: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:

datasheet of ic 555

Abstract: IC 555 datasheet ic 555 8550S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range

8550SS

Abstract: transistor 8550ss IC800 ic 800 IB-80
Contextual Info: 8550SS 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

8550S

Abstract: 8550s* Transistor
Contextual Info: 8550S 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3.BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

BR 8550D

Abstract: 8550C 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D PNP 8550 NPN Transistor br 8550c NPN Transistor transistor 8550D BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D transistor

Abstract: br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D

Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550c

Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D transistor

Abstract: BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

br 8550 NPN Transistor

Abstract: BR 8550 BR 8550 D 8550 NPN Transistor br 8550 c BR 8550 transistor br 8550 c NPN Transistor c 8550 transistor h 8550 pnp transistor 8550 pnp
Contextual Info: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 3.6 The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type

BR 8550D

Abstract: 8550D transistor 8550C transistor 8550D 8550D br 8550c NPN Transistor transistor 8550D PNP br 8550 NPN Transistor NPN transistor 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

Contextual Info: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES

8550SST

Abstract: 8550SS k 1 transistor
Contextual Info: 8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base

st8550d

Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

8550SS

Abstract: transistor 8550ss
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE

8550S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

NPN transistor 8050s

Abstract: 8050S 8550S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

8050S Transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)