Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BU508A Search Results

    TRANSISTOR BU508A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU508A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original
    PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions


    Original
    PDF BU508AT O-220 C-120 BU508ATRev 161002E

    BU508AT

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions


    Original
    PDF BU508AT O-220 C-120 BU508ATRev 161002E BU508AT

    Untitled

    Abstract: No abstract text available
    Text: UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TRANSISTOR TO-3PML 1. DESCRIPTION BASE 2. COLLECTOR 3. EMITTER The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television


    Original
    PDF BU508 BU508AFI 100mA, QW-R214-001

    bu508at

    Abstract: IBM SR 1500
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions


    Original
    PDF BU508AT O-220 150elling C-120 BU508ATRev 161002E bu508at IBM SR 1500

    BU508 TRANSISTOR equivalent

    Abstract: utc bu508 afi BU508 BU508 equivalent transistor bu508 BU508 AFI TRANSISTOR equivalent BU508 TRANSISTOR specification BU508AFI bu508 transistor
    Text: UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TRANSISTOR TO-3PML 1. DESCRIPTION BASE 2. COLLECTOR 3. EMITTER The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.


    Original
    PDF BU508 BU508AFI QW-R214-001 BU508 TRANSISTOR equivalent utc bu508 afi BU508 equivalent transistor bu508 BU508 AFI TRANSISTOR equivalent BU508 TRANSISTOR specification bu508 transistor

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BU508AD

    Abstract: BU508AW philips
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AW OT429 BU508AD BU508AW philips

    BU508AD

    Abstract: BU508AW BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AW OT429 BU508AD BU508AW BY228

    BU508AF equivalent

    Abstract: transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AF OT199 OT199 BU508AF equivalent transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD

    BU508AD

    Abstract: BU508AX BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AX OT399 OT399 BU508AD BU508AX BY228

    transistor bu508af

    Abstract: bu508af philips
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AF OT199 OT199 transistor bu508af bu508af philips

    curve tracer

    Abstract: BU508AX all ic datasheet in one pdf file IBM REV 2.8 BU508AD BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    Original
    PDF BU508AX OT399 OT399 curve tracer BU508AX all ic datasheet in one pdf file IBM REV 2.8 BU508AD BY228

    Untitled

    Abstract: No abstract text available
    Text: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement


    Original
    PDF BU508AF ISOWATT218FX BU508AF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AW 16kHz

    transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AW 16kuration 100-Pq transistor

    BU508AW

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AW 16kHz OT429; OT429 BU508AW

    12nfb

    Abstract: bu508af philips
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AF OT199 16k-- 12nfb bu508af philips

    BU508AF

    Abstract: BU508F
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Collector Current (Pulse) Collector Dissipation (Tc = 25°C)


    OCR Scan
    PDF BU508AF BU508F BU508AF BU508F

    BU508AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AF OT199 16kHz BU508AF

    BU508AF

    Abstract: bu508af transistor
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING Chracteristlc Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Collector Current (Pulse) Collector Dissipation (Tc=25'C)


    OCR Scan
    PDF BU508AF BU508F BU508AF bu508af transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AX OT399 ThsS25 16-I--

    BU508AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    PDF BU508AX OT399 16kHz BU508AX