TRANSISTOR C 1177 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor bfw16a

Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
Contextual Info: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

PH11 SOT23

Abstract: BFS17 TRANSISTOR C 1177
Contextual Info: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage

Contextual Info: 2N918JAN, JTX, JTXV, JA N S processed per M IL-S-19500/301 NPN Silicon Small-Signal Transistor C R YSTA IO N C S 2805 Veterans Highway Suite 14 Ronkonkoma. N Y . 11779 de^Ç'ieO lor uRta hiof fr«qu*ncy ampi.fier dKxcationE M AXIM UM R A T IN G S AatkftQ Coi«cl X E m * * V04UQ«

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N4405* PNP Silicon Small-Signal Transistor c k y s t a io n c s 2805 Veterans Hiahwav d e s i g n e d fo r g e n e r a l- p u r p o s e s w it c h in g a n d a m p lif ie r a p p lic a t io n s . S u / f 74 Ronkorkoma, N.Y. 1177u

2N2605

Abstract: transistor t1W
Contextual Info: SEMICONDUCTOR TECHNICAL DATA s 2N2605JAN, JTX, JTXV, JANS Processed per MlL-S-19500/354 PNP Silicon Small-Signal Transistor < M g n « lor f l M . v - p u w . c h y s t a io n c s <* a p p .^ t . o n , 2805 Veteran* Highway Suite u Ronkorkena NY 11778 [ m a x im u m r a t in g s

2N4854

Contextual Info: 2N4854 CRYSTALONCS Complementary Dual Sm all-Signal Transistor " * * * Rnnkonkoma n .y . 11779 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage V C EO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Collector 1 to Collector 2 Voltage VC1C2 ±120

2N6987

Abstract: 2N6887
Contextual Info: 2N6987 2N6988 ? CRYSTALO NCS 2805 Veterans Highway suite 14 Ronkonkoma. N.Y. 11779 Multiple Quad PNP Silicon Small-Signal Transistors . designed for general-purpose switching circuits and D C to V H F amplifier applications Similar to 2 N 2 90 7 A individual transistor specifications. Complementary devices available

2SK462

Abstract: 53-AS M71E
Contextual Info: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

JIDC

Contextual Info: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

stk 2155

Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
Contextual Info: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

3e tRANSISTOR

Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
Contextual Info: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

3n108

Abstract: transistor 3N108
Contextual Info: I I 3N108 3N109 3N110 3N111 HIG H V O L T A G E S IL IC O N E P IT A X IA L J U N C T IO N INTEGRATED CHOPPER TRANSISTOR • L O W LEAKAGE • L O W C eb • L O W rEE sat • H IG H V EE & V EB ELECTRICAL DATA ABSOLUTE MAXIMUM RATING _ p a r a m e t e r _

2SK1132

Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
Contextual Info: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4

2SA1177

Abstract: I00MH 851G 8511
Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

2SA1177

Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£