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    TRANSISTOR C 413 Search Results

    TRANSISTOR C 413 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 413 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing


    Original     		PDF IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation


    OCR Scan     		PDF BCW69 OT-23

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: S AM S UN G S E M I C O N D U C T O R . INC MMBT5089 IME D | Q0Q757T 5 £ NPN EPITAXIAL SILICON TRANSISTOR T - ¿ q . | q LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT5089 Q0Q757T OT-23 MMBT5088

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan     		PDF 2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic

    tlc 1451

    Abstract: TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5
    Text: AjûKim m an AM P company Radar Pulsed Power Transistor, 20W, IOOjis Pulse, 10% Duty PH2931-20M 2.9 - 3.1 GHz V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


    OCR Scan     		PDF 100fis PH2931-20M ATC100A tlc 1451 TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5

    Untitled

    Abstract: No abstract text available
    Text: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D | 7*^4142 0 0 0 7 a tt» 7 | NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBT4124 OT-23

    SAMSUNG transistor

    Abstract: No abstract text available
    Text: SAMSUNG S E M IC O N D U C T O R INC MMBTA70 14E D | 000731U 5 | PNP EPITAXIAL SILICON TRANSISTOR f AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T*=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF 000731U MMBTA70 OT-23 MMBT5086 SAMSUNG transistor

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 000737b MPSA77 625mW MPSA75

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPS8098 625mW

    marking symbol ER transistor

    Abstract: "marking h" sc-62
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC5212 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2 S C 5 2 1 2 is a resin seated silicon N P N epitaxial type transistor. It designed with high collector current and small VcE sat).


    OCR Scan     		PDF 2SC5212 2SC5212 2SA1946. SC-62 marking symbol ER transistor "marking h" sc-62

    Untitled

    Abstract: No abstract text available
    Text: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA63 625mW MPSA62

    Untitled

    Abstract: No abstract text available
    Text: <Q £> C-MOS NJ 2-OUTPUT POSITIVE VOLTAGE The NJU7204 series is a 2-output C-MOS positive voltage regulator which contains dual system of internal accurate voltage reference, error amplifier, control transistor output voltage setting resistor and strobe circuit.


    OCR Scan     		PDF NJU7204 NJU7204M 30iiiA 01/iF

    RZ3135B40W

    Abstract: T3A3
    Text: N AMER PH IL IPS/DI SCRE TE ObE D bbSBTBl 001S2tj7 S RZ3135B40W J PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended fo r use In a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.


    OCR Scan     		PDF 001S2tj7 RZ3135B40W Liki53ci31 0G15271 RZ3135B40W T3A3

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,


    OCR Scan     		PDF IRG4PH40KD

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSBTBl 0 0 1 S 2 tj7 5 RZ3135B40W DbE D T -33 "/3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3.1 to 3.5 GHz.


    OCR Scan     		PDF RZ3135B40W 7Z24215

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75


    OCR Scan     		PDF QM100DY-24K E80276 E80271

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    2SC4836

    Abstract: No abstract text available
    Text: Ordering number: EN4134 No.4134 _ 2 S C 4 8 3 6 NPN Epitaxial Planar Silicon Transistor 20V/5A Switch Applications A pplications •Strobes, power supplies, relay drivers, lamp drivers. F eatu re s • Large allowable collector dissipation. ■Low saturation voltage.


    OCR Scan     		PDF EN4134 2SC4836 2SC4836

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    220v 2a transistor

    Abstract: smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching
    Text: f Z 7 S 5 ^7# C S - T H O M [ L t K S g T M O N K S S G S F 6 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G 'S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS ■ 50kHz SW ITCHING SPEED


    OCR Scan     		PDF SGSF665 50kHz GC-09Ã 220v 2a transistor smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching