TRANSISTOR C 557 B W 21 Search Results

IDG 600

Abstract: STMicroelectronics Krypton ST952 ST75951 ST952TQF7 TQFP32 "caller ID" "type 2" hybrid VTAC 4 BC 547 PIN DIAGRAM
Contextual Info: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 DC voltage, 4V at a 20mA

IDG 600

Abstract: STMicroelectronics Krypton Krypton daa Krypton isolation ST952 ST75951 ST952TQF7 TQFP32 applications transistor 547 clid
Contextual Info: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hookstate, ST952 DC voltage,4V at a 20mA

BC 547 PIN DIAGRAM

Abstract: IDG 600 pin diagram of BC 547 ST952 STMicroelectronics Krypton TRANSISTOR C 557 B "caller ID" "type 2" hybrid bc 547 transistor transistor BC 557 ST75951
Contextual Info: ST952 D.A.A. LINE INTERFACE APPLICATIONS MODEMS UP TO V.34, 33.6KBPSAND 56Kbps PCMCIA CARDS FAX MACHINES PERSONAL DIGITAL ASSISTANTS ANSWERING MACHINES HIGH FEATURE PHONES WEBPHONES AND SET TOP BOXES TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQFP

C557B

Abstract: C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC556,B BC557,A,B,C BC558B PNP Silicon M AXIMUM RATINGS Symbol BC556 BC557 BC558 Collector-E m itter Voltage VCEO -6 5 -4 5 -3 0 Vdc C o llecto r-B ase Voltage v CB O -6 0 -5 0 -3 0 Vdc E m itte r-B a s e Voltage

M171

Abstract: TACAN 25CC SD1550 transistor ft 960
Contextual Info: H ftm'nmnr-tS^ - * n . n _->m IV U C r O S e m i P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive i iu i Montgomeryville, PA 18936-1013 Tel: 215 631-9840 mumyumciyviiic, r n O 1^ « 4 IT IT o U l OOU RF & MICROWAVE TRANSISTORS TACAN APPLICATIONS

M705

Contextual Info: ñ m-mra.• m Ê C F U S & IU l m m mm w * w w w» » mm 140 C om m erce Drive Montgomeryviüe, PA 18936-1013 Tel: 215 631-9840 O U 1 D t)U RF & MICROWAVE TRANSISTORS TACAN APPLICATIONS DESIGNED FOR USE IN TACAN SYSTEMS EXTREMELY RUGGED THERMALLY STABLE.

M105

Abstract: SD1520 SD1520-8 TACAN transistor
Contextual Info: H / f Ir/lv f « i n f m / / P ro g re s s P o w e re d b y T ec h no log y 140 C o m m e rce D rive m o i /ni itg i uo um iue c ry i y vville i n e , PA r n 18936-1013 i M Tel: 215 631-9840 i u ^ i u ^ A Ä SD1520-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS

pnp array

Abstract: smd transistor db2 current mirrors wilson NPN pnp MATCHED PAIRS array 4 npn transistor ic 14pin 2n3906 equivalent transistor smd transistor b44 ELANTEC 510
Contextual Info: 315^557 0GGE5ÛÛ GST M E L A INC ' T - * l 3 - 'Z - 5 1 F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric m atching and high speed performance. The 350 M H z ft provides A.C. performance

transistor 60 13w

Abstract: transistor 13w TIL 1025 l02s SD1536-8 C2456 M105 SD1536-08 TACAN transistor 13w transistor
Contextual Info: H tjw r-» S IV U C rO S e m i P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1536-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DME TACAN 100 WATTS (typ.) IFF 1030-1090MHz

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

T-10901

Abstract: M105 SD1527-08 SD1527-8 1090mhz 253c S88SC TACAN transistor 1030-1090MHz
Contextual Info: H / f llr f/C f « i n 11mI P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive m u i u y u M i c i yville, v m c , PA i 18936-1013 i u j j u ivi»* Montgomery Tel: 215 631-9840 ä - r m b U n - r « l5 z 7 - 0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS

Contextual Info: EL2021C étantec KiGMp c w g r m ä ü c e rat eocwcöTts EL2021C Monolithic Pin Driver F e a tu r e s G e n e r a l D e s c r ip tio n • Wide range o f programmable analog output levels T he E L 2021 is designed to drive programmed voltages into dif­ ficult loads. I t has the required circuitry to be used as the pin

Contextual Info: Micmsemi M » fff ? fsret&w»$Pö»«« öv f*enK««»ôÿ 140 C o m m e rc e Drive M o n tg o m e iy v jlle , PA 18936-1013 Tel: {215 6 3 1-9 840 SD1536-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF. OMETACAN 100 WATTS typ.) IFF 1030-1090MHz

LCD 2X16

Abstract: thermometer circuit LM35 display by LCD thermometer LM35 display LCD pic lcd 2x16 RELAY-SPDT pin diagram of lcd display 2x16 lcd display 2x16 Thermometer clock LCD ic 10 pin diagram of lcd display 2x16 2x16 lcd pin diagram
Contextual Info: Evaluation board for Microcontrollers, series ST72F26x. User’s manual REV 1.2 , lu ard ST Sta rve a , e o Ev B VR ers b S l d n io 1, A trol We mo t i a ‘5 in ron ed r c fo cro dd s M the e s d e i m mb oar rs, peC E B e S PI its ng roll gh r K pi nt Hi fo

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MMBT6429 ' 14E D § 7^t,4142 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR " r T -.a • c\ w^ : AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage

NPN transistor 2n2222 beta value

Abstract: 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values
Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2021C Monolithic Pin Driver F e a tu r e s G en era l D e sc r ip tio n • Wide range of programmable analog output levels • 0.5 Ampere output drive with external transistors • Programmable Slew Rate • Low overshoot with large

2SB1231

Abstract: 2SD1841
Contextual Info: O rdering num ber: EN3260A SMÊYO % No 326ÖA i 2SB1231/2SD1841 2SB1231: PNP Epitaxial Planar Silicon Transistor 2SD1841: NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. • Low saturation voltage.

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Input buffer • 7.5 V/V nominal gain • + 0 dB to —50 dB gain control • Clamp/DC-restore • 300 M Hz small-signal bandwidth • 300 M Hz large-signal bandwidth • 1.5 ns rise and fall time • 12V supply

Contextual Info: la n t e c NIGH PERFORMANCE ANAUOG INTEGRATED CIRCUITS EL2002C Low Power, 180 MHz Buffer Am plifier F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary

CCD123

Abstract: 2B54 CCD123DC noise diode 10-PM Contact image sensor fairchild
Contextual Info: R A L CCD123 1728-Element Linear Image Sensor Fairchild Im aging Sensors FEA TURES • ■ ■ ■ ■ ■ ■ ■ 1728 x 1 photosite array 13pm » 10pm on 10pm pitch Lo w dark signal High responsivity On-chip clock drivers Dynamic range typical: 5500:1 Over 1V peak-to-peak output

Q62702-C2325

Contextual Info: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326

Contextual Info: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

639 TRANSISTOR PNP

Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

current fed push pull topology

Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
Contextual Info: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors