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    TRANSISTOR C 616 Search Results

    TRANSISTOR C 616 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 616 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA3046 equivalent

    Abstract: CA3046 CA3045 Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96
    Text: CA3045, CA3046 S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays May 1994 March 1993 Features Description • Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2µA Max at IC = 1mA The CA3045 and CA3046 each consist of five general


    Original     		PDF CA3045, CA3046 CA3045 CA3046 120MHz 500MHz CA3046 equivalent Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96

    mechanical pressure switch

    Abstract: Pressure Switches "Pressure Switches" transistor 14305
    Text: Electronic pressure switches Type 616 Technical The type 616 electronic differential pressure switches measure pressure by means of highly resistant ceramic elements. An open collector transistor output accommodates loads up to 100 mA. data Either an N/C or N/O contact may be used, and the upper and lower switching point


    Original     		PDF

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    MU2030

    Abstract: MU-2030 MM3726 MM3725
    Text: MM3726 SILICON PNP silicon annular transistor designed for medium-current, high-speed saturated switching and core driver applications, and for complementary c ir ­ cuitry with NPN type MM3725. C o lle c to r c o n n e c te d to ca»«> CASE 31 (TO -5)


    OCR Scan     		PDF MM3726 MM3725. 10-SATURATION MU2030 MU-2030 MM3726 MM3725

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    cl 740

    Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
    Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES


    OCR Scan     		PDF PH1600-6 Sb4250S 00DDS71 1600MHZ 21-Z12 470pF 015uF cl 740 tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor

    2SC2718

    Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
    Text: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC2718 2SA1151 Pi078 0878j22 Ki0888 2SC2718 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886

    Untitled

    Abstract: No abstract text available
    Text: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c ­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    transistor d 2389

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B transistor d 2389

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612

    CA3046 equivalent

    Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
    Text: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S

    PO32

    Abstract: 33J6 PH1600
    Text: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR


    OCR Scan     		PDF PH1600-32 F--06 PH1600-32 1600MHZ 470pF 015uF F--07 PO32 33J6 PH1600

    2SC155

    Abstract: 2SC1552 s36ca IC1510
    Text: 2 s c 1552 O ^ ^ SILICON NPN EPITAXIAL PLANAR TRANSISTOR H U H F - S - ^ KÊIMMilBffl o O I I * ffl INDUSTRIAL APPLICATIONS U H F ~ S Ban d Low N o i s e A m p l f i e r A pp i i c a t iong O H igh S p e ed S w itc h in g A p p l i c a t i o n s • fiH ff-e -f S


    OCR Scan     		PDF 2sc1552 Vce-10V 0SC155S3 2SC155 2SC1552 s36ca IC1510

    702 TRANSISTOR

    Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE


    OCR Scan     		PDF NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663

    TC-6300

    Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
    Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss


    OCR Scan     		PDF 2SK873 TC-6300 2SK873 miw dc-dc tc6300 Voscm-20

    transistor rf type M 2530

    Abstract: signal path designer INA02170
    Text: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.


    OCR Scan     		PDF INA-02: INA-03: AN-S011: transistor rf type M 2530 signal path designer INA02170

    Untitled

    Abstract: No abstract text available
    Text: DA TA SHEET TFT COLOR LCD MODULE N L 1 0 2 7 6 A C 24-02 31cm 12.1 type , 1024 x 768 pixels, Full color Vertical screen expansion (Multi-scan), Incorporated backlight w ith inverter DESCRIPTION NL10276AC24-02 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising


    OCR Scan     		PDF NL10276AC24-02 1024x768 b4275E5 NL10276AC24-02 b4275B5

    12v to 70v dc circuit diagrams

    Abstract: 75v to 12v dc circuit diagrams EN2786 VPA12
    Text: Ordering number : EN2786A _ V P A 12 FBET Hybrid !C. Video Pack Series High-Precision CRT D isplay Video Output Amplifier O verview The VPA12 High-Precision CRT Display Video O utput Am plifier integrates a complete am plifier using high-precision FBET and LSBT transistor chips into a single compact hybrid IC, allow ing high-output


    OCR Scan     		PDF EN2786A VPA12 120MHz 64kHz 12v to 70v dc circuit diagrams 75v to 12v dc circuit diagrams EN2786

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan     		PDF 2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr

    2SC4813

    Abstract: VDF pn C40r
    Text: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è


    OCR Scan     		PDF 2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r