TRANSISTOR C S Z 44 V Search Results

TRANSISTOR C S Z 44 V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR C S Z 44 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor c s z 44 v Abstract: C 34 F PH3134 Contextual Info: A # anf AeM P company * Radar Pulsed Power Transistor, 25W, IOOjis Pulse, 10% Duty 3.1 - 3.4 G H z PH3134-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadb an d C lass C O p eratio n	OCR Scan	PH3134-25M TT50M50A ATC100A transistor c s z 44 v C 34 F PH3134	PDF
transistor c s z 44 v Abstract: OC36 transistor 27F272 PH2729-110M Contextual Info: M a n A M P ic o m p a n y Radar Pulsed Power Transistor, 110W, 100ns Pulse, 10% Duty 2.7-2.9 GHz PH2729-110M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d C lass C O p e ra tio n	OCR Scan	100ns PH2729-110M 500S41W104KP4 ATC100A 73030833-07BOARD 73030837-U transistor c s z 44 v OC36 transistor 27F272 PH2729-110M	PDF
equivalent transistor c 243 Abstract: lf2805a 1000 MHz transistor 5W Contextual Info: A fikQ m w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 500 -1000 MHz LF2805A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	OCR Scan	LF2805A equivalent transistor c 243 lf2805a 1000 MHz transistor 5W	PDF
Contextual Info: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n	OCR Scan	150ns PH1214-40M PH1214-40M	PDF
transistor 1005 oj Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07 Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH3135-5S ATC100A transistor 1005 oj transistor power rating 5w ATC100A PH3135-5S PIN07	PDF
Contextual Info: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel	OCR Scan	MA4T6310 OT-23	PDF
transistor sb 772 Abstract: TRANSISTOR b 772 p C1413 d 772 transistor Contextual Info: y M AfMeP e o ii m an co m p a n y RF MOSFET Power Transistor, 1W, 28V 100-500 MHz UF2801KI V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration Lower Noise Floor 100 MHz to 500 MHz O peration	OCR Scan	UF2801KI transistor sb 772 TRANSISTOR b 772 p C1413 d 772 transistor	PDF
Contextual Info: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n	OCR Scan	PH3134-11S ATC100A	PDF
Contextual Info: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting	OCR Scan	PH1920-45	PDF
100 watt hf mosfet 12 volt Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810 Contextual Info: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re	OCR Scan	DU2840V 10C13C15 100 watt hf mosfet 12 volt transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810	PDF
transistor t2a Abstract: U 318 m t2a transistor UF2820P Contextual Info: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor	OCR Scan	UF2820P transistor t2a U 318 m t2a transistor UF2820P	PDF
ST 9241 Contextual Info: M m antA ccompany o ti AMP Radar Pulsed Power Transistor, 30W, 1ns Pulse, 10% Duty 3.1-3.4 GHz PH3134-30S V2.00 Features • • • • • • • • CrV ÜC> NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadban d C lass C O p eratio n	OCR Scan	PH3134-30S TT50M50A ATC100A ST 9241	PDF
DU1230S Abstract: arco TRIMMER capacitor SEMCO Contextual Info: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices	OCR Scan	DU1230S 5-80pF 4-40pF 1000pF DU1230S arco TRIMMER capacitor SEMCO	PDF
CAPACITOR 1000pf Abstract: TRIMMER capacitor 5-60 pF transistor MOSFET 924 ON Contextual Info: A fa . M a n A M P c om pany RF MOSFET Power Transistor, 5W, 28V 2 -175 MHz DU2805S V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure I-ower Capacitances for Broadband Operation High Saturated Output Power l.ower Noise Figure Than Bipolar Devices	OCR Scan	DU2805S 89ies 7-100pF 9-180pF 1000pF 500pF B62152-A0001-X001 DU2805S CAPACITOR 1000pf TRIMMER capacitor 5-60 pF transistor MOSFET 924 ON	PDF

Contextual Info: an A M P company Avionics Pulsed Power Transistor, 350W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-350L V2.00 Features • • • • • • • • NPN Silicon Microwave Pow er Transistor C om m on Base Configuration Broadband Class C O peration High Efficiency Interdigitated G eom etry	OCR Scan	250ns PH1090-350L	PDF
2052-5636-02 Abstract: TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor Contextual Info: yM Ü KO VI m an AM P company Radar Pulsed Power Transistor, 25W, 2jxs Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH3135-25S not81 TT50M50A ATC100A 2052-5636-02 TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor	PDF
capacitor 50uf Abstract: balun 50 ohm DU28200M transistor c s z 44 v Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v	PDF
transistor power rating 5w Abstract: DU2805S transistor Pout 5W B62152A Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices	Original	DU2805S 918OpF B62152-AOOOl-X001 transistor power rating 5w DU2805S transistor Pout 5W B62152A	PDF
transistor c s z 44 v Abstract: PH1214-25L PH1214-25M Contextual Info: = SC= z =z an AMP company = Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz v2.00 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	214-25L PH1214-25L PH1214-25M transistor c s z 44 v PH1214-25L PH1214-25M	PDF
K 2642 transistor Abstract: TRIMMER capacitor 10-40 pf b 595 transistor Transistor Equivalent list resistor 300 ohms DU2860U Contextual Info: A jte X M M an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 -1 7 5 MHz DU2860U V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	OCR Scan	DU2860U 4-40pF 9-180pF DU2860U K 2642 transistor TRIMMER capacitor 10-40 pf b 595 transistor Transistor Equivalent list resistor 300 ohms	PDF
Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n	OCR Scan	PH1214-100EL	PDF
capacitor 330 j38 Abstract: Rogers 6010.5 Contextual Info: an A M P company Wireless Bipolar Power Transistor, 60W 1450- 1550 MHz PH1516-60 V2.00 _ 16.51 ’630 Features • • • • • • _ .4 0 0 _ (10.16) D esigned for l.inear Am plifier A pplications Class AB: -30 dBc Typ 3rd IMD at 60 W atts PKP Class A: + 5 3 dBm Typ 3rd O rd e r In te rc e p t Point	OCR Scan	PH1516-60 capacitor 330 j38 Rogers 6010.5	PDF
3F TRANSISTOR Abstract: F2801 Contextual Info: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration	Original	UF2801 F2801 3F TRANSISTOR	PDF
Contextual Info: a n A M P com pany Radar Pulsed Power Transistor, 65W, 100 xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-65M 9 DO VS? 86 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n	OCR Scan	PH2729-65M TT30M50A ATC100A	PDF

TRANSISTOR C S Z 44 V Search Results

TRANSISTOR C S Z 44 V Result Highlights (5)

TRANSISTOR C S Z 44 V Datasheets Context Search

transistor c s z 44 v

transistor c s z 44 v

equivalent transistor c 243

transistor 1005 oj

transistor sb 772

100 watt hf mosfet 12 volt

transistor t2a

ST 9241

DU1230S

CAPACITOR 1000pf

2052-5636-02

capacitor 50uf

transistor power rating 5w

transistor c s z 44 v

K 2642 transistor

capacitor 330 j38

3F TRANSISTOR