4 npn transistor ic 14pin
Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation
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PA104
PA104B:
PA104G:
14-pin
PA104
4 npn transistor ic 14pin
lowest noise audio NPN transistor
C10535E
MICRO-X TRANSISTOR MARK Q6
8 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
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d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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4 npn transistor ic 14pin
Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA101
PA101B:
14-pin
PA101G:
PA101B-E1
4 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
C10535E
Silicon Bipolar Transistor Q6
MICRO-X TRANSISTOR MARK Q6
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d1297
Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.
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2SK2357/2SK2358
2SK2357/2SK2358
2SK2357/2358)
2SK2358:
O-220
d1297
d1308
2SK2357
2SK2358
C10535E
C11531E
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d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
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2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
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4 npn transistor ic 14pin
Abstract: C10535E PA103 lowest noise audio NPN transistor
Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:
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PA103
PA103B:
PA103G:
14-pin
PA103
4 npn transistor ic 14pin
C10535E
lowest noise audio NPN transistor
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C10535E
Abstract: C11531E fb1l3n
Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
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C11531E)
C10535E
C11531E
fb1l3n
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NEC MARKING surface
Abstract: C11531E FP1F3P nec S33
Text: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
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C11531E)
NEC MARKING surface
C11531E
FP1F3P
nec S33
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C10535E
Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES
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NE52418
NE52418
OT-343
NE52418-T1
C10535E
NE52418-T1
transistor GaAS marking 576
NEC heterojunction bipolar transistor
MARKING 452 4PIN
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C10535E
Abstract: C11531E MEI-1202 PA611TA
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.65 +0.1 –0.15 The µPA611TA is a switching device which can be driven directly by a 2.5-V power source.
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PA611TA
PA611TA
SC-74
C10535E
C11531E
MEI-1202
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2SJ462
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit : mm The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 2.0 ±0.2 by an IC operating at 3 V.
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2SJ462
2SJ462
C10535E
MEI-1202
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d1308
Abstract: D1297 2SK2355 2SK2356 2SK2356-Z MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel in millimeter MOS Field Effect Transistor designed for high voltage switching
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2SK2355,
2SK2355-Z/2SK2356,
2SK2356-Z
2SK2356-Z
2SK2356:
2SK2355:
d1308
D1297
2SK2355
2SK2356
MP-25
MP-25Z
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C10535E
Abstract: C11531E MEI-1202 PA610TA uPA610TA MARKING JB
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION 0.65 +0.1 –0.15 The µPA610TA is a switching device which can be driven suitable for use as a high-speed switching device in digital circuits.
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PA610TA
PA610TA
C10535E
C11531E
MEI-1202
uPA610TA
MARKING JB
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2SJ463A
Abstract: C10535E C11531E MEI-1202 D1119
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm The 2SJ463A is a switching device which can be driven directly 2.1 ±0.1 0.3 +0.1 –0 by a 2.5 V power source. The 2SJ463A has excellent switching characteristics, and is
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2SJ463A
2SJ463A
C10535E
C11531E
MEI-1202
D1119
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transistor marking T79 ghz
Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications
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2SC5508
2SC5508
2SC5508-T2
transistor marking T79 ghz
TT 2076 transistor
MARKING T79 "NPN Transistor"
transistor T79 ghz
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Untitled
Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
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2SC5507
2SC5507
2SC5507-T2
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2sj460
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
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2SJ460
Abstract: MEI-1202 X10679E
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION
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2SJ460
2SJ460
MEI-1202
X10679E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit : mm The 2SJ462 is a switching device which can be driven directly 5.7 +0.1 by an 1C operating at 3 V. 1.5 +0.1
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2SJ462
2SJ462
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C10535* MANUAL NEC
Abstract: 2SJ461 C10535E MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ461
2SJ461
C10535* MANUAL NEC
C10535E
MEI-1202
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2SJ460
Abstract: MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
MEI-1202
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d1072
Abstract: 2SJ460 MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable
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2SJ460
2SJ460
d1072
MEI-1202
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2SJ461
Abstract: MARKING H19 C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a PACKAGE DRAWINGS in millimeter 2.5 V pow er source. The M O S FET has excellent switching characteristics and is suitable
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2SJ461
2SJ461
MARKING H19
C10535E
MEI-1202
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