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    TRANSISTOR C367 Search Results

    TRANSISTOR C367 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d2493

    Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. d2493 c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852

    c4381

    Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
    Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. c4381 D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494

    D2641

    Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
    Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10


    Original     		PDF A1186. A1215. A1216. A1262. A1294. A1295. A1303. A1386/A A1488/A A1492. D2641 c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300

    C4517

    Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
    Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668


    Original     		PDF C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287

    2-7D101A

    Abstract: 2SA1432 2SC3672 C3672
    Text: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V


    Original     		PDF 2SC3672 2SA1432. 2-7D101A 2SA1432 2SC3672 C3672

    2-7D101A

    Abstract: 2SA1432 2SC3672 C3672 Display Nixie
    Text: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V


    Original     		PDF 2SC3672 2SA1432. 2-7D101A 2SA1432 2SC3672 C3672 Display Nixie

    2SC3672

    Abstract: C3672 2-7D101A 2SA1432
    Text: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V


    Original     		PDF 2SC3672 2SA1432. 2SC3672 C3672 2-7D101A 2SA1432

    Untitled

    Abstract: No abstract text available
    Text: 2SC3672 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High breakdown voltage: VCBO = 300 V, VCEO = 300 V


    Original     		PDF 2SC3672 2SA1432.

    2-7D101A

    Abstract: 2SC3673 C3673
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2-7D101A 2SC3673 C3673

    Untitled

    Abstract: No abstract text available
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673

    Untitled

    Abstract: No abstract text available
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2-7D101A

    2-7D101A

    Abstract: 2SC3673 C3673
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2-7D101A 2SC3673 C3673

    2SC3673

    Abstract: 2-7D101A C3673
    Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3673 2SC3673 2-7D101A C3673

    transistor C372

    Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
    Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor C372 c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369

    C3671

    Abstract: 2-7D101A 2SC3671
    Text: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3671 C3671 2-7D101A 2SC3671

    C3671

    Abstract: 2-7D101A 2SC3671
    Text: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3671 C3671 2-7D101A 2SC3671

    C3671

    Abstract: No abstract text available
    Text: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3671 150HIBA C3671

    2-7D101A

    Abstract: 2SC3671 C3671
    Text: 2SC3671 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3671 2-7D101A 2SC3671 C3671

    transistor c372

    Abstract: c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor c372 c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor

    c3670

    Abstract: 2SC3670 2-7D101A
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3670 c3670 2SC3670 2-7D101A

    2-7D101A

    Abstract: 2SC3670 C3670
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3670 2-7D101A 2SC3670 C3670

    Untitled

    Abstract: No abstract text available
    Text: 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3670

    c372 transistor

    Abstract: transistor C369 transistor C372
    Text: International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ps @125°C, VGE= 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGBC20MD2-S -10ps 10kHz) C-371 SMD-220 C-372 00201fe2 c372 transistor transistor C369 transistor C372

    transistor C372

    Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
    Text: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses


    OCR Scan     		PDF 10kHz) IRGBC20MD2-S C-371 SMD-220 C-372 transistor C372 c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor