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    TRANSISTOR C3E Search Results

    TRANSISTOR C3E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C3E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF POWER TRANSISTOR 100MHz

    Abstract: uhf vhf amplifier Transistor C3E CMPTH10 rf amplifier 10mhz MARKING CODE C3E
    Text: Central TM Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    Original     		PDF CMPTH10 CMPTH10 OT-23 100MHz RF POWER TRANSISTOR 100MHz uhf vhf amplifier Transistor C3E rf amplifier 10mhz MARKING CODE C3E

    Transistor C3E

    Abstract: MARKING CODE C3E CMPTH10 Low Noise uhf transistor marking code RB marking C3E uhf vhf amplifier marking code C3E SOT-89
    Text: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    Original     		PDF CMPTH10 OT-23 100MHz 26-September Transistor C3E MARKING CODE C3E CMPTH10 Low Noise uhf transistor marking code RB marking C3E uhf vhf amplifier marking code C3E SOT-89

    MARKING CODE CCB

    Abstract: Transistor C3E
    Text: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    Original     		PDF CMPTH10 OT-23 26-September 100MHz MARKING CODE CCB Transistor C3E

    Transistor C3E

    Abstract: RF TRANSISTOR CMPTH10 MARKING CODE C3E marking code R5 sot23
    Text: CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF


    Original     		PDF CMPTH10 CMPTH10 OT-23 100MHz Transistor C3E RF TRANSISTOR MARKING CODE C3E marking code R5 sot23

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    transistor zc

    Abstract: transistor zx series transistor C3 C3EX
    Text: Cell-Based IC Crystal Oscillators Introduction Crystal Theory This Engineering Application Note EAN describes the use of the Crystal Oscillator parts in the ATMEL Libraries. The mechanical impedance of a crystal for one particular series resonant frequency k (the fundamental and its overtones) can be electrically modeled by a


    Original     		PDF SC-23, transistor zc transistor zx series transistor C3 C3EX

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original     		PDF CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230

    basic ac motor reverse forward electrical diagram

    Abstract: bi-directional switches IGBT Dynex Semiconductor ge traction motor DIM800ECM33-F000
    Text: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.1 April 2006 LN24543 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Soft Punch Through Silicon KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • Isolated MMC Base-plate with AIN Substrate


    Original     		PDF DIM800ECM33-F000 DS5815-1 LN24543) DIM800ECM33-F000 basic ac motor reverse forward electrical diagram bi-directional switches IGBT Dynex Semiconductor ge traction motor

    DIM800ECM33-F000

    Abstract: KW transistor
    Text: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.2 January 2009 LN26568 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V 800A


    Original     		PDF DIM800ECM33-F000 DS5815-1 LN26568) DIM800ECM33-F000 KW transistor

    DIM800ECM33-F000

    Abstract: No abstract text available
    Text: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*


    Original     		PDF DIM800ECM33-F000 DS5815-1 LN23667) DIM800ECM33-F000

    MARKING C3F

    Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


    Original     		PDF PC8182TB PC8182TB HS350 WS260 VP215 IR260 PU10206EJ01V0DS MARKING C3F PC8181TB F MARKING 6PIN transistor marking wt

    omron plc CPU 41 e rs232 pin configuration

    Abstract: transistor f422 PYC35 RGB 5050 IP65
    Text: Panel Builder Guide 2014 Components for panels and cabinets industrial.omron.eu Welcome to our world Our best-in-class devices for your panels and cabinets Welcome to Omron’s world of advanced industrial automation. The PANEL BUILDER GUIDE is your essential tool to pre-select


    Original     		PDF Y209-EN2-02A PanelBuilderGuide2014 omron plc CPU 41 e rs232 pin configuration transistor f422 PYC35 RGB 5050 IP65

    schematic diagram analog tv tuner rca

    Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
    Text: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and


    Original     		PDF DSD0503040C2 DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG schematic diagram analog tv tuner rca dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017

    Transistor C3E

    Abstract: sot 23 transistor marking w 26 RF Amplifier marking 420 marking code LE SOT 23 MARKING CODE C3E marking code C3E SOT-89
    Text: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output


    OCR Scan     		PDF CMPTH10 OT-23 100MHz 26-September OT-23 Transistor C3E sot 23 transistor marking w 26 RF Amplifier marking 420 marking code LE SOT 23 MARKING CODE C3E marking code C3E SOT-89

    Untitled

    Abstract: No abstract text available
    Text: Central TM Sem i c o n d u c t o r C o r p . CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CMPTHIOtypeis an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    OCR Scan     		PDF CMPTH10 OT-23 100MHz

    transistor b35

    Abstract: marking code b35 b35 sot23 uhf vhf amplifier bo 913 sot-23 npn marking code cr CMPTH10 Transistor C3E MARKING CODE C3E MARKING CODE B35 SOT
    Text: Central" CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C E N TR A L S E M IC O N D U C TO R CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    OCR Scan     		PDF CMPTH10 OT-23 CMPTH10 100nA 100MHz transistor b35 marking code b35 b35 sot23 uhf vhf amplifier bo 913 sot-23 npn marking code cr Transistor C3E MARKING CODE C3E MARKING CODE B35 SOT

    Untitled

    Abstract: No abstract text available
    Text: central Sem iconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PTH 10 type is an NPN silicon R F transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    OCR Scan     		PDF CMPTH10 OT-23 100hA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: International TSR Rectifier PD - 9.1461D IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1461D IRG4PC30U O-247AC

    Transistor C3E

    Abstract: 10J-iA marking code C3E SOT-89
    Text: Central" Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF tra n sisto r manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and


    OCR Scan     		PDF CMPTH10 OT-23 CMPTH10 10jiA 100MHz Transistor C3E 10J-iA marking code C3E SOT-89

    2SD1896

    Abstract: No abstract text available
    Text: h -7 > v ^ $ /Transistors 2SD1896 9 S D 1 8 9 6 • W ^ w Triple Diffused Planar NPN Silicon Transistor ijS îA tS ^ jitiÜ Æ I/L o w Freq. Power Amp. • • ^ ffi'+ jiH /'D im e n s io n s Unit : mm 1) V ce (sat) rt'-fé'-'o VcE(sat)=0.3V(Typ.) (IC/IB=3A/0.3A)


    OCR Scan     		PDF 2SD1896 100ms 2SD1896

    Untitled

    Abstract: No abstract text available
    Text: C3EIMIMUM C O R P O R A T I O High Gain Class A Amplifier N 505 LC505/LD505 DATA SHEET FEATURES DESCRIPTION • 71 dB of gain with 1.3 V supply The LC/LD505 are low voltage, linear monolithic integrated amplifiers with a typical electrical gain of 71 dS. The circuits


    OCR Scan     		PDF LC505/LD505 LC/LD505 LD505 313S7Ã 0GG3G07

    Untitled

    Abstract: No abstract text available
    Text: I II C3EIMIMUM ^flullr C O R P O R A T I Low Voltage - Low Power Operational Amplifier LC810 O N PRELIMINARY DATA SHEET DESCRIPTION FEATURES • low voltage design - operates down to1.0 V total supply voltage • low power consumption - 200 pA typical quiescent supply current


    OCR Scan     		PDF LC810 LC810

    Untitled

    Abstract: No abstract text available
    Text: - Ì- J T C3EIMIMUM C O R P O R A T I O N G X 4 2 0 1 W ideband, Monolithic 1x1 Video Crosspoint Switch DATA SHEET FEATURES CIRCUIT DESCRIPTION T h e G X 4 2 0 1 is a w id e b a n d 1x1 v id e o c ro s s p o in t im p le m e n te d • -3 d B b a n d w id th , 3 0 0 M H z w ith C L = 0 pF


    OCR Scan     		PDF 800MHz.

    L6281

    Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
    Text: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A


    OCR Scan     		PDF L6201 L6201P L6202 L6203 L6201) L6203/L6201 T0100 L6281 Stepper driver board with L297 L6203 circuit Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6506