TRANSISTOR CB 369 Search Results

TRANSISTOR CB 369 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR CB 369 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty	Original	CCB250 VAC/60 16-Mar-12 CCB250	PDF
bc 369 pnp silicon transistor Abstract: TRANSISTOR bC 369 transistor BC 55 TRANSISTOR C 369 BC 369 transistor BC 368 Text: 4M > BC 369 'W Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n iedriger Betriebsspannung. Kom plem entärtype zu BC 368 Applications: Com plem entary audio amplifier, driver and output stages fo r low supply voltage.	OCR Scan		PDF
TIP135 texas Abstract: C3691 Text: TEXAS INSTR -COPTOJ- 8961726 TE XAS bS INSTR D E § flit, 1 7 2 b □□ 3 ^ 1 5 62C 36912 OPTO TIP135, TIP136, TIP137 P-N-P DARLINGTON SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T Designed For Complementary Use With TIP130, TIP131, TIP132 T-33-3 1 70 W at 2 5 ° C Case Temperature	OCR Scan	TIP135, TIP136, TIP137 TIP130, TIP131, TIP132 T-33-3 100ft TIP135 7S265 TIP135 texas C3691	PDF
Untitled Abstract: No abstract text available Text: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:	OCR Scan	BLV33F BLV33F	PDF
TRANSISTOR C 369 Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586 Text: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OhE D bbS3T31 Q01S7SD T T'3i’ i r SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A ~ v CBO max.	OCR Scan	bbS3T31 Q01S7SD bb53131 QQIL57S5 BF579 T-31-15	PDF
T1P142 Abstract: TIP142 TIP147 T1P141 Text: »e"§ a^lTEt, OOBbTlö h2 TEXAS INSTR ÌOPTO> ' 8961726 TEXAS INSTR T-33-29 62C 36918 OPTO TIP140, TIP141, TIP142 N-P-N DARLINGTON-COIMNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed For Complementary Use With T IP 145, T IP146, TIP147	OCR Scan	T-33-29 TIP140, TIP141, TIP142 IP146, TIP147 TIP140 T1P142 TIP142 TIP147 T1P141	PDF
2SD369 Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .	OCR Scan	2sd369 AC73tttffl 300X300X2mm 100X100X2mm 2SD369 IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O	PDF
BD234 Abstract: No abstract text available Text: MO TQR CLA SC 1SE D \| 1 317554 00fiM7ai 1 \| XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers	OCR Scan	00fiM7ai BD234 BD236 BD236 O-225AA	PDF
RCA8350B Abstract: No abstract text available Text: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT \| a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602	OCR Scan	TIP605, TIP606, TIP600, TIP601, TIP602 2N6053, 2N6054. RCA8350, RCA8350A, RCA8350B RCA8350B	PDF
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking	OCR Scan	Q62702-F944 OT-23 fl23SbDS 00bb7fi EHTG7054	PDF
lt 5234 Abstract: Tip640 IP645 DEJJ Text: TEXAS INSTR - COPTO} 8961726 TE XAS ^ 2 De \| fl=ìfc:175t, 0D3bT7D INSTR COPTO D 62C 3 6 97 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP645, TIP646, TIP647	OCR Scan	TIP640, TIP641, TIP642 IP645, TIP646, TIP647 T-33-29 TIP640 lt 5234 IP645 DEJJ	PDF
T1P132 Abstract: TIP135 texas tip 132 P131 opto Text: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b =]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137	OCR Scan	TIP135, TIP136, TIP137 T-33-29 T0-22QAB T1P132 TIP135 texas tip 132 *P131 opto	PDF

transistor 1211 Abstract: transistor su 312 transistor zo 109 Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the	OCR Scan	2SC5005 2SC5005 Collect69 transistor 1211 transistor su 312 transistor zo 109	PDF
transistor n53 Abstract: BC869-10 Text: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output	OCR Scan	BC869 BC868/BC869 h\n53 transistor n53 BC869-10	PDF
2sc4571 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the	OCR Scan	2SC4571 2SC4571 SC-70) 2SC4571-T1	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is	OCR Scan	bb53T31 BLY88A	PDF
T17 TRANSISTOR Abstract: BC869-10 marking code my sot 89 MY sot-89 BC869 BC869-16 BC869-25 IEC134 cec PNP transistor bc869 TRANSISTOR Text: 711002b DDbfl4Sf l TT? • P H IN BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tra n sisto r in a plastic m icro m in ia tu re envelope, intended fo r low-voltage, h ig h-current l.f. applications. B C 868/B C 869 is th e m atched co m p le m e n ta ry p a ir suitable fo r class-B audio o u tp u t	OCR Scan	711002b BC869 BC868/BC869 S0T-89. T17 TRANSISTOR BC869-10 marking code my sot 89 MY sot-89 BC869 BC869-16 BC869-25 IEC134 cec PNP transistor bc869 TRANSISTOR	PDF
BUR50 Abstract: No abstract text available Text: • 7qgqs37 DDgabi3 m ■ { ■ Vb -\ <5 _ BUR50 BUR50S SGS-THOMSON EUCTtFMD ! S 6 S-THOMXON 3QE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the	OCR Scan	7qgqs37 BUR50 BUR50S BUR50 BUR50S BUR50-BUR50S	PDF
BGY15 Abstract: BGY 55 Text: BGY15 SILICON PLANAR NPN M EDIUM -CURRENT TRANSISTOR A R R A Y The BGY 15 is an assembly of seven isolated silicon planar epitaxial NPN transistors in a 16-lead dual in-line plastic package, intended for industrial and general purpose applications. ABSOLUTE M AXIM U M RATINGS	OCR Scan	BGY15 BGY15 16-lead BGY 55	PDF
TRANSISTOR 2SC 2581 Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS	OCR Scan	2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733	PDF
2322-712 Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor	PDF
2SC4630 Abstract: 2SC463 Text: Ordering n u m b e r:EN3699A 2SC4630 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 900V . •Small Cob (typical Cob = 2.8pF). • Full isolation package.	OCR Scan	EN3699A 2SC4630 2SC4630 2SC463	PDF

TRANSISTOR CB 369 Search Results

TRANSISTOR CB 369 Result Highlights (5)

TRANSISTOR CB 369 Datasheets Context Search

Untitled

bc 369 pnp silicon transistor

TIP135 texas

Untitled

TRANSISTOR C 369

Untitled

T1P142

2SD369

BD234

RCA8350B

3866S

Untitled

lt 5234

T1P132

transistor 1211

transistor n53

2sc4571

Untitled

T17 TRANSISTOR

BUR50

BGY15

TRANSISTOR 2SC 2581

2322-712

2SC4630