TRANSISTOR CHN Search Results

Contextual Info: January 1990 Edition 1.1 PRODUCT PROFILE . 2SC3058A Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 3 0 5 8 A is a silicon N P N plan ar general purpose, high p ow er switching tra n ­ sistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T te chnology.

31495MO

Abstract: transistor za
Contextual Info: O rdering num ber: EN 5063 No.5063 SA % Y O i I I _ I PNP Epitaxial Planar Silicon Transistor With bias FC155 resistances PNP Epitaxial Planar Silicon Transistor Constant-Current Circuit Applications F eatures

14N60E

Contextual Info: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

CHN 645

Abstract: transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726
Contextual Info: MRF511 SILICON l ’h e R ,F L i n e HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low distortion characteristics and noise figure. Specified for use in C A T V applications.

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Tem ic BUF636A S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sW itch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

diode lt 238

Abstract: 21N60ED
Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

2N5332

Contextual Info: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399

CHN 703

Abstract: c 2665 transistor MRF511
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T he RF L ine HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N . . . designed s p e c ific a lly fo r broadband a p p lica tio n s re q u irin g low d is to rtio n ch a ra c te ristic s and noise fig u re .

Contextual Info: SEM ICONDUCTOR KTX211E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TES6. DIM M ILLIM ETER S A l.6± 0.05 • With Built-in bias resistors.

NDT2955

Abstract: ACAA TRANSISTOR
Contextual Info: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This

Contextual Info: SEM ICONDUCTOR KTX303U TE CHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including two TR, Diode devices in USV. (Ultra Super Mini type with 5 leads)

sy 320 diode

Contextual Info: SEM ICONDUCTOR KTX403U TE CHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including tw o T R , D iode devices in USV. (U ltra Super M ini type w ith 5 leads)

Contextual Info: SEM ICONDUCTOR KTX215E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including two devices in TES6. Thin Extreme Super mini type with 6 leads. • With Built-in bias resistors.

Contextual Info: SEM ICONDUCTOR KTX112T TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR G E N E R A L PUR PO SE A PPLICATION. FEA T U RE S • Including two devices in TS6. DIM Thin Super Mini type with 6 pin • Simplify circuit design. 0| • Reduce a quantity o f parts and manufacturing process.

chn 610

Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y a c o m p a n y o f V I S H A Y VISHAY VISHAY M ODEL 1401 RESISTORS 3 Pin Transistor Outline Hermetic Resistor Network The three pin TO-18 package is suitable for single resistor hermetic packaging with case and lid grounded for electrical isolation. This

Contextual Info: SEM ICONDUCTOR KRX206U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads. • W ith B uilt-in bias resistors.

1007U

Contextual Info: SEM ICONDUCTOR KRX104U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in U SV . U ltra Super m ini type w ith 5 leads. M IL L IM E T E R S

955 539 ic

Abstract: BFP81 0211s ix 0640
Contextual Info: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

sot-143 vishay telefunken

Contextual Info: ViSHAY _ ▼ BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.