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    TRANSISTOR CODE R8 Search Results

    TRANSISTOR CODE R8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE R8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L

    IDG 600

    Abstract: STMicroelectronics Krypton ST952 ST75951 ST952TQF7 TQFP32 "caller ID" "type 2" hybrid VTAC 4 BC 547 PIN DIAGRAM
    Text: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 DC voltage, 4V at a 20mA


    Original     		PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton ST952TQF7 TQFP32 "caller ID" "type 2" hybrid VTAC 4 BC 547 PIN DIAGRAM

    IDG 600

    Abstract: STMicroelectronics Krypton Krypton daa Krypton isolation ST952 ST75951 ST952TQF7 TQFP32 applications transistor 547 clid
    Text: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hookstate, ST952 DC voltage,4V at a 20mA


    Original     		PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton Krypton daa Krypton isolation ST952TQF7 TQFP32 applications transistor 547 clid

    PH240320T-014-LP4Q

    Abstract: R5F21262NFP R8A77220AC266BGV touch panel controller ph240320T Renesas R8C ADC DB10 MMBT3906 PLQP0032GB-A vga camera
    Text: APPLICATION NOTE R8C/26 GROUP Touch Panel Controller with IIC Interface Abstract This article introduces an example of controlling the panel and detecting coordinates as part of a larger system by using a R8C/26 to interface with a resistor type of film touch panel. A MigoR platform evaluation board, with a SH7722 Part


    Original     		PDF R8C/26 SH7722 R8A77220AC266BGV) R8C/26 R8C/26, R5F21262NFP, RET05B0002-0100/Rev PH240320T-014-LP4Q R5F21262NFP R8A77220AC266BGV touch panel controller ph240320T Renesas R8C ADC DB10 MMBT3906 PLQP0032GB-A vga camera

    PLQP0064KD-A

    Abstract: 64P6X R8A66153FP
    Text: REJ03F0260-0100 Rev. 1.00 Jan. 10. 2008 R8A66153FP PROGRAMMABLE BUFFERED I/O EXPANDER DESCRIPTION The R8A66153FP is a programmable I/O expander using a high-voltage CMOS process. And has three sets of 8-bit I/O ports, two sets of 8-bit high voltage output ports, and one 4-bit input port.


    Original     		PDF REJ03F0260-0100 R8A66153FP R8A66153FP 50ohm REJ03F0260-0100 64pin PLQP0064KD-A 64P6X

    CA3KN31BD

    Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
    Text: CONTROL GEAR/DIN TERMINALS AC contactors page 239 Time delay control blocks page 240 DIN rail terminals page 248 Thermal overload relays page 239 Auxiliary contact blocks 241 Coil suppressor modules 241 Contact blocks 239-241, 244 Contactors 239-241 Control relays


    Original     		PDF UL94V-0 CIM/8W-D10 CIM/R4-WB-S-24 CIM/R8-WB-S-24 CIM/R16-WB-S-24 16-way CA3KN31BD LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k

    CERAMIC DISK CAPACITOR

    Abstract: selling fan circuit DS51306 equivalent of BS170 2N2222A npn transistor equivalent transistor K 2767 PWM 12V fan speed control circuit transistor MOSFET BS170 TC64X 2N3906 Darlington transistor
    Text: M TC64X/TC64XB Fan Control Demo Board User’s Guide  2003 Microchip Technology Inc. DS21401C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		PDF TC64X/TC64XB DS21401C DK-2750 D-85737 NL-5152 CERAMIC DISK CAPACITOR selling fan circuit DS51306 equivalent of BS170 2N2222A npn transistor equivalent transistor K 2767 PWM 12V fan speed control circuit transistor MOSFET BS170 TC64X 2N3906 Darlington transistor

    9V-12V DC INPUT

    Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06

    9V-12V DC INPUT

    Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
    Text: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01

    Untitled

    Abstract: No abstract text available
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701

    case 202 transistor pinouts

    Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D DS30701 case 202 transistor pinouts hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D mbta06

    fsp3601

    Abstract: SCD34 Step-up PWM DC/DC Converter tssop8 AP2305 h 2n3904 MARKING U1 msop8 2N3904 2N3906 470PF TL431
    Text: STEP-UP DC/DC CONTROLLER FSP3601 „ FEATURES z z z z z z z z z „ GENERAL DESCRIPTION Wide supply voltage operating range: 1.8 to 15V Reference voltage precision: 4% Low current consumption: Operation Mode 5.5mA Standby Mode: 1µA High speed oscillator frequency: 1MHz max


    Original     		PDF FSP3601 FSP3601 comparin048 SCD34 Step-up PWM DC/DC Converter tssop8 AP2305 h 2n3904 MARKING U1 msop8 2N3904 2N3906 470PF TL431

    MPSA92(KSP92) equivalent

    Abstract: AN2201 CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor
    Text: Application Note AN2201 Application Note AN2201: AS2533.6 Single Chip Telephone Demo Board  Austria Mikro Systeme International AG 1 Scope This application note describes the use of the Single Chip Telephone IC´s AS2533.6, based on the multi standard demo board DB2201.


    Original     		PDF AN2201 AN2201: AS2533. DB2201. An2201 MPSA92(KSP92) equivalent CI AS2536 TRANSISTOR SMD 13W MPS A43 SCHEMATIC smd transistor BC557 SmD TRANSISTOR a42 CI AS2534B 1N4007 M7 150v varistor

    bc5488

    Abstract: transistor BC5488 Bc5488 datasheet Basic Halogen Converter 1N5406 BC548B T1P116 TIP116 Z86E02 Z86E31
    Text: APPLICATION NOTE STEP-DOWN VOLTAGE CONVERTER 1 INTRODUCTION In many cases, electronic circuits require an accurate and stable voltage supply. The voltage provided by transformers, batteries, generators, and so on are unstable and not very accurate. Therefore, a voltage regulator must be placed between


    Original     		PDF AN001400-Z8X0299 bc5488 transistor BC5488 Bc5488 datasheet Basic Halogen Converter 1N5406 BC548B T1P116 TIP116 Z86E02 Z86E31

    Untitled

    Abstract: No abstract text available
    Text: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure


    OCR Scan     		PDF bbS3131 0D24AA0 BFG93A; BFG93A/X; BFG93A/XR BFG93A BFG93 OT143 BFG93A/X

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency


    OCR Scan     		PDF bbS3T31 00ESS33 BFR520 BFR520

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips

    buz31

    Abstract: No abstract text available
    Text: SIEMENS BUZ 31 L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated VPT05I55 * Logic Level Pin 1 Pin 2 G Type BUZ 31 L Vòs 200 V b 13.5 A ^DS on 0.2 Í2 D Pin 3 S Package Ordering Code TO-220 AB C67078-S1322-A2 Maximum Ratings


    OCR Scan     		PDF VPT05I55 O-220 C67078-S1322-A2 051bi buz31

    up/xr+2320

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR


    OCR Scan     		PDF BFG93AW BFG93AW/X; BFG93AW/XR BFG93AW/X OT343 OT343R MSB014 up/xr+2320

    UHF transistor GHz

    Abstract: BFG93AW DD44 pa 4010
    Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X


    OCR Scan     		PDF BFG93AW BFG93AW/X; BFG93AW/XR OT343 OT343R BFG93AW/X BFG93AW/XR BFG93AW BFG93AW/X UHF transistor GHz DD44 pa 4010

    CH36

    Abstract: mbg* sot143 MCD101 MC SOT143 557 sot143 bfg93a PHILIPS 557 SOT143 UHF transistor GHz BFG93 BFR91A
    Text: Philips Semiconductors Product specification BFG93A; BFG93A/X; BFG93A/XR NPN 6 GHz wideband transistors FEATURES PINNING • High power gain PIN • Low noise figure DESCRIPTION 4 BFG93A Fig.1 Code: R8 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFG93A; BFG93A/X; BFG93A/XR BFG93 OT143 BFG93A BFG93A/X OT143. MSB035 CH36 mbg* sot143 MCD101 MC SOT143 557 sot143 bfg93a PHILIPS 557 SOT143 UHF transistor GHz BFR91A

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


    OCR Scan     		PDF r88uct RFA120 mu24 dc SWT-2