TRANSISTOR D 982 Search Results

TRANSISTOR D 982 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D 982 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Motorola 680 Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead	PDF
Motorola transistor 358 Abstract: Case 449-02 Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02	PDF
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	OCR Scan	MRF9822T1/D MRF9822T1 MRF9822/D	PDF
MRF141 Abstract: MOSFET RF POWER Contextual Info: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS	Original	MRF141 MRF141 112x45° MOSFET RF POWER	PDF
BLF177 Abstract: hf power transistor mosfet blf177 mosfet Contextual Info: BLF177 HF/VHF POWER MOS TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The ASI BLF177 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for industrial and military applications in the HF/ VHF frequency range. .112x45° S FULL R D Ø.125 NOM.	Original	BLF177 BLF177 112x45° hf power transistor mosfet blf177 mosfet	PDF
Contextual Info: m 2N2647 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO -18 M O D MAXIMUM RATINGS lc 2.0 A (PULSED) 30 V VCE P 300 m W @ Tc = 25 °C	OCR Scan	2N2647 2N2647	PDF
Contextual Info: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C	OCR Scan	2N6038 O-126 15OOO	PDF
j48 transistor Abstract: TRANSISTOR j4 ASI10545 AJT015 Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm	Original	AJT015 AJT015 j48 transistor TRANSISTOR j4 ASI10545	PDF
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm	Original	AJT015 AJT015	PDF
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from	OCR Scan	2SC5010	PDF
2N3702 Abstract: transistor 2N3702 2n3702 transistor Contextual Info: 2N3702 SILICON PNP TRANSISTOR DESCRIPTION: The 2N3702 is a Medium Signal Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS 200 mA V o m Ic 25 V P d is s 360 mW @ Ta # 25 0C t stg -65 0C to +150 0C 0 jc	OCR Scan	2N3702 transistor 2N3702 2n3702 transistor	PDF
2SC2782 Abstract: NPN 2SC2782 transistor 2sc2782 Contextual Info: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V	Original	2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782	PDF
AJT150 Abstract: ASI10548 Contextual Info: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:	Original	AJT150 AJT150 ASI10548	PDF
2N3711 Abstract: transistor 2N3711 Contextual Info: 2N3711 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3711 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS SO mA V o m Ic SO V p d is s SeO mW @ Ta = 25 0C Tj -e5 0C to &15O 0C	OCR Scan	2N3711 transistor 2N3711	PDF

transistor te 2443 Abstract: 2N3740A Contextual Info: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C	OCR Scan	2N3740A 2N3740A RAD8-89 RAD190 transistor te 2443	PDF
1000c Abstract: 2N6677 Contextual Info: 2N6677 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 15 A Ib 5.0 A 400 V O m le < MAXIMUM RATINGS 175 W @ Te # 25 °C P d is s Tj -65 0C to +200 0C	OCR Scan	2N6677 1000c	PDF
AVD400 Abstract: ASI10567 818 transistor Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I	Original	AVD400 AVD400 ASI10567 818 transistor	PDF
AVF450 Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166 Contextual Info: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:	Original	AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166	PDF
Contextual Info: 2N6660 MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS 1.1 A @ T c " 25 °C 800 mA @ T c " 100 °C lc -55 °C to *150 °C o < Ts t g m Tj V d s " 60 V	OCR Scan	2N6660	PDF
2N3054A Contextual Info: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s	OCR Scan	2N3054A RAD8-89	PDF
AVF1000 Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w Contextual Info: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks	Original	AVF1000 AVF1000 000W/1090 c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w	PDF
D 1651 transistor Abstract: AJT030 ASI10546 Contextual Info: AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N O A The ASI AJT030 is a Class-c RF power transistor, designed for JTIDS pulsed output & driver applications from 960 to 1215 MHz. B E K D C .062 x 45° M G FEATURES: F Ø.120	Original	AJT030 AJT030 D 1651 transistor ASI10546	PDF
Contextual Info: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE T0-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. DIMENSIONS mm A B C D E F G H L M N P R S T U MAXIMUM RATINGS Ie 10 A IB 4.0 A o	OCR Scan	2N6098 T0-220	PDF
Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C	OCR Scan	2N3741 2N3741	PDF

TRANSISTOR D 982 Search Results

TRANSISTOR D 982 Result Highlights (5)

TRANSISTOR D 982 Datasheets Context Search

Motorola 680

Motorola transistor 358

MRF141

BLF177

j48 transistor

2N3702

2SC2782

AJT150

2N3711

transistor te 2443

1000c

AVD400

AVF450

2N3054A

AVF1000

D 1651 transistor