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    TRANSISTOR D123 Search Results

    TRANSISTOR D123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2981

    Abstract: 2SK2981-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING Unit : mm FEATURES +0.2 6.5 ±0.2


    Original     		PDF 2SK2981 O-251 2SK2981 2SK2981-Z

    2SK2982

    Abstract: 2SK2982-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 5.0±0.2 • Low On-Resistance 2.3±0.2


    Original     		PDF 2SK2982 O-251 2SK2982 2SK2982-Z

    2SK2983

    Abstract: 2SK2983-S 2SK2983-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A)


    Original     		PDF 2SK2983 2SK2983 O-220AB 2SK2983-S O-262 2SK2983-ZJ O-263 2SK2983-S 2SK2983-ZJ MP-25

    2SK2984

    Abstract: 2SK2984-S 2SK2984-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A)


    Original     		PDF 2SK2984 O-220AB 2SK2984-S O-262 2SK2984-ZJ O-263 2SK2984 2SK2984-S 2SK2984-ZJ MP-25

    2SK2982

    Abstract: 2SK2982-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)


    Original     		PDF 2SK2982 2SK2982 O-251) O-251 2SK2982-Z O-252 2SK2982-Z

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A)


    Original     		PDF 2SK2983 2SK2983 O-220AB 2SK2983-S O-262 2SK2983-ZJ O-263 25ace

    2SK2983

    Abstract: 2SK2983-S 2SK2983-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS on 1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A)


    Original     		PDF 2SK2983 O-220AB 2SK2983-S O-262 2SK2983-ZJ O-263 2SK2983 2SK2983-S 2SK2983-ZJ MP-25

    2SK2982

    Abstract: 2SK2982-Z transistor C 2290
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)


    Original     		PDF 2SK2982 2SK2982 O-251) O-251 2SK2982-Z O-252 2SK2982-Z transistor C 2290

    2sk2984

    Abstract: 2SK2984-S 2SK2984-ZJ MP-25 PT260
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2984 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 10 mΩ MAX. (VGS = 10 V, ID = 20 A)


    Original     		PDF 2SK2984 2SK2984 O-220AB) O-220AB 2SK2984-S O-262 2SK2984-ZJ O-263 O-262) 2SK2984-S 2SK2984-ZJ MP-25 PT260

    2SK2981

    Abstract: 2SK2981-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A)


    Original     		PDF 2SK2981 2SK2981 O-251) O-251 2SK2981-Z O-252 O-252) 2SK2981-Z

    D217 OPTO

    Abstract: opto transistor moc MOCD217 RS481A D217
    Text: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic


    Original     		PDF MOCD217/D MOCQ217 MKI45BP, 2PHX34204P-I D217 OPTO opto transistor moc MOCD217 RS481A D217

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    PW610

    Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
    Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,


    Original     		PDF 2SJ324 IEI-1209) PW610 TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0

    2SK2981

    Abstract: 2SK2981-Z Mos 6502
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2981 N チャネル パワーMOS FET スイッチング用 工業用 2SK2981 は，N チャネル縦型 MOS FET で，スイッチング特性が優れており，各種スイッチング電源用途に最適


    Original     		PDF 2SK2981 2SK2981 O-251) O-252) O-251 2SK2981-Z O-252 D12355JJ3V0DS00 2SK2981-Z Mos 6502

    2SK2983

    Abstract: 2SK2983-S MP-25 MP-25Z
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2983 N チャネル パワーMOS FET スイッチング用 工業用 2SK2983 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。


    Original     		PDF 2SK2983 O-220AB 2SK2983-S O-262 2SK2983-Z O-220SMD D12357JJ3V0DS00 2SK2983 2SK2983-S MP-25 MP-25Z

    ITE 8502

    Abstract: 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2984 N チャネル パワーMOS FET スイッチング用 工業用 2SK2984 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。


    Original     		PDF 2SK2984 O-220AB) O-220AB 2SK2984-S O-262 2SK2984-Z O-220SMD O-262) ITE 8502 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29

    dupline 128

    Abstract: diode 2b 0536 equivalent components of diode 1n4002 BOX MODULAR ENCLOSURES IP55 D12362
    Text: Issued November 1991 D12362 Dupline2-wire transmission system RS Stocknumbers 629-190, 629-279 A multiplexing transmission system, capable of sending and receiving up to 128 independent signals to a distance of 10km, simultaneously and in any direction, along two wires. The system is used for


    Original     		PDF D12362 230Vac 115Vac 15-30Vdc 128-channel dupline 128 diode 2b 0536 equivalent components of diode 1n4002 BOX MODULAR ENCLOSURES IP55 D12362

    C4106 transistor

    Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
    Text: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower


    OCR Scan     		PDF T0-220MF T0-220 2SB1266 2SD1902 2SB1267 2SD1903 2SB1268 2SD1904 2SB1269 C4106 transistor c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191

    Untitled

    Abstract: No abstract text available
    Text: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance Rds oh i = 20 m£i (MAX.) (Vgs = 10 V, Id = 15 A)


    OCR Scan     		PDF 2SK2983 -220AB 2SK2983-S O-262 2SK2983-ZJ O-263 O-220AB MP-25)

    Untitled

    Abstract: No abstract text available
    Text: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance R ds oh i = 10 m£i (MAX.) (V gs = 10 V, Id = 20 A)


    OCR Scan     		PDF 2SK2984 O-220AB 2SK2984-S O-262 2SK2984-ZJ O-263 MP-25)

    C4106 transistor

    Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
    Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower


    OCR Scan     		PDF T0-220MF O-220 Ratings/Ta-25 T0-220) 2SB1267 2SD1903 D1235 2SB1268 2SD1904 C4106 transistor C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		PDF TC518129AFWI-10 TC518129AFWI TC518129AFWI D-121 D-122 D-123

    c4106

    Abstract: d1061 C4106 transistor B1133 D1666 B824 transistor c4106 semiconductor transistor c3457 C4105 C4105 transistor
    Text: T0-220MF Mini Fin P o w e r T r a n s i s t o r S e r i e s Feat ures Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower


    OCR Scan     		PDF T0-220MF T0-220 Ratings/Ta-25Xi 2SB1266 2SD1902 2SB1267 2SD1903 2SB1268 2SD1904 c4106 d1061 C4106 transistor B1133 D1666 B824 transistor c4106 semiconductor transistor c3457 C4105 C4105 transistor

    TRANSISTOR D123

    Abstract: D123BP in60 D123 D123AL D123AP G122
    Text: designed for . . . B Siliconix D123 Monolithic 6-Channel FET Switch Drivers BENIEFITS llnterfacing Low Level Signals to IFET Switches such as G I I 5 and G122 Series Multi-Channel FET Switches • Reduces System C om ponent Requirements o Six Interface C ircuits on One Chip


    OCR Scan     		PDF 1000pF TRANSISTOR D123 D123BP in60 D123 D123AL D123AP G122